SEMICONDUCTOR LIGHT EMITTING DEVICE

• US 20100123148A1
• Filed: 11/16/2009
• Published: 05/20/2010
• Est. Priority Date: 11/17/2008
• Status: Active Grant

• Current Assignee: LG Innotek Company Limited (LG Corporation)
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Park, Hyung Jo
• Granted Patent: US 8,222,656 B2
• Time in Patent Office: Days
• US Class Current: 257/94
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

Provided are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a plurality of compound semiconductor layers, a first electrode, a second electrode layer, and a conductive support member. The plurality of compound semiconductor layers comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The first electrode is formed under the compound semiconductor layer. The second electrode layer is formed on the compound semiconductor layer. The second electrode layer has an unevenness. The conductive support member is formed on the second electrode layer.

Claims

1. A semiconductor light emitting device, comprising:

a plurality of compound semiconductor layers comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;

a first electrode under the plurality of compound semiconductor layers;

a second electrode layer having an unevenness on the plurality of compound semiconductor layers; and

a conductive support member on the second electrode layer.

2. The semiconductor light emitting device according to claim 1, wherein the unevenness of the second electrode layer has a three-dimensional shape.

3. The semiconductor light emitting device according to claim 1, comprising a first semiconductor layer discontinuously formed between the second conductive type semiconductor layer and the second electrode layer.

4. The semiconductor light emitting device according to claim 3, wherein the first semiconductor layer is disposed at a regular or irregular interval.

5. The semiconductor light emitting device according to claim 3, wherein the first semiconductor layer comprises the same or different semiconductor material from the second conductive type semiconductor layer.

6. The semiconductor light emitting device according to claim 3, wherein the first semiconductor layer comprises at least one of compound semiconductors of group III-V elements.

7. The semiconductor light emitting device according to claim 3, wherein the first semiconductor layer comprises at least one of a first conductive type semiconductor, an undoped semiconductor, and a second conductive type semiconductor.

8. The semiconductor light emitting device according to claim 3, wherein at least one of a recess and a protrusion of the second electrode layer is formed as an inferior conductive region.

9. The semiconductor light emitting device according to claim 1, wherein the unevenness of the second electrode layer has a protrusion inclined to the second conductive type semiconductor layer.

10. The semiconductor light emitting device according to claim 9, wherein the protrusion of the unevenness of the second electrode layer has an inclined surface of about 55 degrees to about 57 degrees with respect to the second conductive type semiconductor layer.

18. The semiconductor light emitting device according to claim 10, wherein the second electrode layer is extended on the channel layer.

11. A semiconductor light emitting device, comprising:

a plurality of compound semiconductor layers comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;

a first electrode under the plurality of compound semiconductor layers;

a light-transmitting channel layer around a circumference of an upper surface of the plurality of compound semiconductor layers;

a second electrode layer having an unevenness on the compound semiconductor layer; and

a conductive support member on the second electrode layer.

12. The semiconductor light emitting device according to claim 11, comprising a first semiconductor layer discontinuously formed between the second conductive type semiconductor layer and the second electrode layer.

13. The semiconductor light emitting device according to claim 11, wherein the first semiconductor layer has the same or different polarity from the second conductive type semiconductor layer.

14. The semiconductor light emitting device according to claim 11, wherein the light-transmitting channel layer comprises at least one of SiO₂, SiO_x, SiO_xN_y, SiO_xN_y, Si₃N₄, Al₂O₃, TiO₂, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO) and antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO.

15. The semiconductor light emitting device according to claim 11, wherein the first semiconductor layer has a thickness of about 0.1 μ

m to about 2 μ

m and a maximum diameter of about 1.0 μ

m to about 10 μ

m.

16. The semiconductor light emitting device according to claim 11, wherein the first semiconductor layer has upper and lower parts of different diameters and an inclined circumference surface.

17. The semiconductor light emitting device according to claim 11, comprising a nonconductor layer comprising MgN between the second conductive type semiconductor layer and the second electrode layer.

19. A semiconductor light emitting device, comprising:

a plurality of compound semiconductor layers comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;

a first semiconductor layer discontinuously protruding from the second conductive type semiconductor layer;

a first electrode under the first conductive type semiconductor layer;

a light-transmitting channel layer around a circumference of an upper surface of the second conductive type semiconductor layer;

a second electrode layer on the second conductive type semiconductor layer and the first semiconductor layer; and

a conductive support member on the second electrode layer.

20. The semiconductor light emitting device according to claim 19, wherein the first semiconductor layer comprises at least one of an undoped semiconductor, an N-type semiconductor, and a P-type semiconductor.