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SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE

  • US 20100123177A1
  • Filed: 11/17/2009
  • Published: 05/20/2010
  • Est. Priority Date: 11/17/2008
  • Status: Abandoned Application
First Claim
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1. A semiconductor memory device, comprising:

  • a TC unit series-type ferroelectric random access memory (FeRAM) comprising a plurality of memory cells serially connected, each memory cell comprising a memory transistor and a ferroelectric capacitor being connected each other in parallel, comprising;

    a first electrode over and electrically connected to one of a source and a drain in the memory transistor;

    a second electrode opposite to the first electrode over and electrically connected to the other of the source and the drain in the memory transistor;

    a third electrode on both sidewalls of the second electrode other than an under portion of the second electrode; and

    a ferroelectric film between the first electrode and the two electrodes, the second electrode and the third electrode;

    wherein the ferroelectric capacitor comprises the first electrode, the third electrode and the ferroelectric film.

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