CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE HAVING TRENCH SHIELD ELECTRODE AND METHOD
First Claim
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13. A semiconductor device structure comprising:
- a region of semiconductor material having a major surface, an active area, and a contact area;
a trench having a striped shape formed in the region of semiconductor material and extending from the active area to the contact area;
a shield electrode formed in the trench and separated from the region of semiconductor material by a first insulator layer;
a control electrode formed in the trench and separated from the region of semiconductor material by a second insulator layer and separated from the shield electrode by a third insulator layer, wherein shield electrode and the control electrode terminate in the contact area, and wherein the shield electrode and the control electrode are recessed below the major surface in the contact area;
a first conductive structure contacting the control electrode inside the trench within the contact area; and
a second conductive structure contacting the shield electrode inside the trench within the contact area.
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Abstract
In one embodiment, a contact structure for a semiconductor device having a trench shield electrode includes a gate electrode contact portion and a shield electrode contact portion within a trench structure. Contact is made to the gate electrode and the shield electrode within or inside of the trench structure. A thick passivating layer surrounds the shield electrode in the contact portion.
39 Citations
21 Claims
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13. A semiconductor device structure comprising:
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a region of semiconductor material having a major surface, an active area, and a contact area; a trench having a striped shape formed in the region of semiconductor material and extending from the active area to the contact area; a shield electrode formed in the trench and separated from the region of semiconductor material by a first insulator layer; a control electrode formed in the trench and separated from the region of semiconductor material by a second insulator layer and separated from the shield electrode by a third insulator layer, wherein shield electrode and the control electrode terminate in the contact area, and wherein the shield electrode and the control electrode are recessed below the major surface in the contact area; a first conductive structure contacting the control electrode inside the trench within the contact area; and a second conductive structure contacting the shield electrode inside the trench within the contact area. - View Dependent Claims (1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 14, 15, 16, 17, 18, 19, 20)
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18-1. The structure of claim 17, wherein the trench includes a flared portion within the contact area, and wherein at least the second conductive structure contacts the shield electrode within the flared portion.
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21. A method for forming a semiconductor device comprising the steps of:
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providing a region of semiconductor material having a major surface, an active area, and a contact area; forming a trench having a striped shape in the region of semiconductor material and extending from the active area to the contact area; forming a shield electrode in the trench and separated from the region of semiconductor material by a first insulator layer; forming a control electrode in the trench and separated from the region of semiconductor material by a second insulator layer and separated from the shield electrode by a third insulator layer, wherein shield electrode and the control electrode terminate in the contact area, and wherein the shield electrode and the control electrode are recessed below the major surface in the contact area; forming a first conductive structure contacting the control electrode inside the trench within the contact area; and forming a second conductive structure contacting the shield electrode inside the trench within the contact area.
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Specification