SEMICONDUCTOR DEVICE HAVING TRENCH SHIELD ELECTRODE STRUCTURE
First Claim
Patent Images
1. A semiconductor device structure comprising:
- a region of semiconductor material including a major surface, first and second opposing edges, and a first corner;
a first trench structure formed in an active area of the semiconductor device, wherein the first trench structure includes a first control electrode and a first shield electrode;
a first source region formed adjacent the first trench structure in the active area;
a first contact structure formed adjacent the first edge, wherein the first control electrode and the first shield electrode terminate in the first contact structure, and wherein the first trench structure extends from the active area to the first contact structure;
a control pad formed overlying the major surface;
a first control runner formed overlying the major surface and coupled to the control pad and the first control electrode in the first contract structure, wherein the first control runner has a first end portion;
a first shield electrode runner formed overlying the major surface and coupled to the first shield electrode in the first contact structure; and
a first conductive layer coupled to the first source region in the active area and coupled to the first shield electrode runner, wherein the first conductive layer further includes a first portion that wraps around the first end portion.
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Abstract
In one embodiment, a structure for a semiconductor device having a trench shield electrode includes a control pad, control runners, shield runners, and a control/shield electrode contact structure. The structure is configured to use a single level of metal to connect the various components. In another embodiment, a shield runner is placed in an offset from center configuration.
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Citations
21 Claims
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1. A semiconductor device structure comprising:
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a region of semiconductor material including a major surface, first and second opposing edges, and a first corner; a first trench structure formed in an active area of the semiconductor device, wherein the first trench structure includes a first control electrode and a first shield electrode; a first source region formed adjacent the first trench structure in the active area; a first contact structure formed adjacent the first edge, wherein the first control electrode and the first shield electrode terminate in the first contact structure, and wherein the first trench structure extends from the active area to the first contact structure; a control pad formed overlying the major surface; a first control runner formed overlying the major surface and coupled to the control pad and the first control electrode in the first contract structure, wherein the first control runner has a first end portion; a first shield electrode runner formed overlying the major surface and coupled to the first shield electrode in the first contact structure; and a first conductive layer coupled to the first source region in the active area and coupled to the first shield electrode runner, wherein the first conductive layer further includes a first portion that wraps around the first end portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device structure comprising:
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a region of semiconductor material having a major surface and first and second opposing edges; a trench extending in a first direction from the first edge to the second edge; a shield electrode formed in the trench; a first contact to the shield electrode formed adjacent the first edge; a second contact to the shield electrode formed adjacent the second edge; and a third contact to the shield electrode offset from a center of the trench along the first direction so that the third contact is closer to the first edge than the second edge. - View Dependent Claims (12, 13, 14, 15)
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16. A semiconductor device structure comprising:
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a region of semiconductor material including a major surface, first and second opposing edges, and a first corner; a first trench structure formed in an active area of the semiconductor device, wherein the first trench structure includes a first control electrode and a first shield electrode; a first source region formed adjacent the first trench structure in the active area; a first contact structure formed adjacent the first edge, wherein the first control electrode and the first shield electrode terminate in the first contact structure, and wherein the first trench structure extends from the active area to the first contact structure; a control pad formed overlying the major surface adjacent the first corner and the first edge; a first control runner formed overlying the major surface and coupled to the control pad and the first control electrode in the first contract structure, wherein the first control runner has a first end portion; a first shield electrode runner formed overlying the major surface and coupled to the first shield electrode in the first contact structure; a first conductive layer coupled to the first source region in the active area and coupled to the first shield electrode runner, the first conductive layer further including a first portion that wraps around the first end portion; and a contact region for making contact to the first shield electrode in the active area, wherein the contact region is placed closer the second edge than the first edge. - View Dependent Claims (17, 18, 19, 20)
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21. A semiconductor device structure comprising:
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a region of semiconductor material having a major surface, first and second opposing edges, and an interior portion; a trench extending in a first direction from the first edge to the second edge; a shield electrode formed in the trench; a control electrode formed in a portion of the trench and extending to the first edge; a first contact contacting the control electrode adjacent the first edge; and a second contact contacting the shield electrode at the interior portion.
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Specification