SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE
First Claim
1. A method for manufacturing a semiconductor component, comprising:
- providing a semiconductor material having first and second major surfaces;
forming a plurality of trenches in the semiconductor material;
forming a first layer of dielectric material over the plurality of trenches;
forming a first electrode in a first portion of a first trench of the plurality of trenches, the first electrode having opposing sides and the first trench having at least one sidewall;
thinning the first layer of dielectric material;
recessing the first electrode in the first portion of the first trench of the plurality of trenches;
further thinning the first layer of dielectric material to expose portions of the opposing sides of the first electrode;
forming a second layer of dielectric material over at least the first trench of the plurality of trenches; and
forming a second electrode in a second portion of the first trench.
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Accused Products
Abstract
A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.
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Citations
21 Claims
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1. A method for manufacturing a semiconductor component, comprising:
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providing a semiconductor material having first and second major surfaces; forming a plurality of trenches in the semiconductor material; forming a first layer of dielectric material over the plurality of trenches; forming a first electrode in a first portion of a first trench of the plurality of trenches, the first electrode having opposing sides and the first trench having at least one sidewall; thinning the first layer of dielectric material; recessing the first electrode in the first portion of the first trench of the plurality of trenches; further thinning the first layer of dielectric material to expose portions of the opposing sides of the first electrode; forming a second layer of dielectric material over at least the first trench of the plurality of trenches; and forming a second electrode in a second portion of the first trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for manufacturing a semiconductor component, comprising:
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providing a semiconductor material having first and second major surfaces; forming at least two trenches in the semiconductor material, wherein first and second trenches of the at least two trenches have floors and sidewalls and extend into the semiconductor material; forming a first oxide layer over the floors and sidewalls of the first and second trenches; forming a first electrode on a first portion first oxide layer and a second electrode on a second portion of the first oxide layer, the first portion of the first oxide layer in the first trench and the second portion of the first oxide layer in the second trench; forming a first portion of a stub from the first oxide layer and exposing portions of the sidewalls of the first and second trenches; forming a second oxide layer over the sidewalls of the first and second trenches; forming first and second gate electrodes over the first and second electrodes, respectively; forming a source region in a portion of the semiconductor material that is between the first and second trenches; and forming a drain contact to the semiconductor material. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A semiconductor component, comprising:
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a semiconductor material of a first conductivity type and having first and second major surfaces; a plurality of trenches in the semiconductor material, wherein first and second trenches of the plurality of trenches extend from the first major surface into the semiconductor material, and wherein the first and second trenches have floors and sidewalls; a first layer of dielectric material on the floors and sidewalls of the first and second trenches; first and second shielding electrodes on the first layer of dielectric material in the first and second trenches, respectively; a second layer of dielectric material on the first and second shielding electrodes; an oxide stub adjacent the sidewalls of the first and second trenches; a gate oxide on the second layer of dielectric material and on the sidewalls of the first and second trenches; first and second gate electrodes on the gate oxide in the first and second trenches, respectively; a first doped region of a first conductivity type extending into a portion of the semiconductor material that is between the first and second trenches; and a second doped region of a second conductivity type extending into a portion of the first doped region. - View Dependent Claims (21)
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Specification