TRENCH SHIELDING STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD
First Claim
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1. A semiconductor device structure comprising:
- a region of semiconductor material having a first major surface;
a first trench structure formed in an active area of the semiconductor device, wherein the first trench structure includes a first trench, a first control electrode, and a first shield electrode;
a control pad formed overlying the first major surface and coupled to the first control electrode; and
a second trench structure formed in the region of semiconductor material underlying at least a portion of the control pad, wherein the second trench structure includes a second trench, an insulator layer and a second shield electrode, and wherein the second shield electrode and the first shield electrode are coupled together, and wherein the second trench structure is configured as a shielding structure to isolate the control pad from the region of semiconductor material.
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Abstract
A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the shielding structure is placed beneath a control pad. In another embodiment, the shielding structure is placed beneath a control runner.
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Citations
21 Claims
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1. A semiconductor device structure comprising:
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a region of semiconductor material having a first major surface; a first trench structure formed in an active area of the semiconductor device, wherein the first trench structure includes a first trench, a first control electrode, and a first shield electrode; a control pad formed overlying the first major surface and coupled to the first control electrode; and a second trench structure formed in the region of semiconductor material underlying at least a portion of the control pad, wherein the second trench structure includes a second trench, an insulator layer and a second shield electrode, and wherein the second shield electrode and the first shield electrode are coupled together, and wherein the second trench structure is configured as a shielding structure to isolate the control pad from the region of semiconductor material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device structure comprising:
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a region of semiconductor material having a major surface and first and second opposing edges; a first trench formed in the region of semiconductor material extending in a direction from the first edge to the second edge; a first shield electrode formed in the first trench; a first control electrode formed in the first trench; a second trench formed in the region of semiconductor material; an insulator layer formed in the second trench; a second shield electrode formed in the second trench overlying the insulator layer; a control pad overlying at least a portion of the second trench, wherein the control pad is coupled to the first control electrode; and a first shield electrode runner formed overlying the major surface, wherein the first shield electrode runner is coupled to the second shield electrode. - View Dependent Claims (13, 14, 15)
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16. A semiconductor device structure comprising:
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a region of semiconductor material having a first major surface; a first trench structure formed in an active area of the semiconductor device, wherein the first trench structure includes a first trench, a first control electrode, and a first shield electrode; a control pad formed overlying the first major surface and coupled to the first control electrode; a second trench structure formed in the region of semiconductor material underlying at least a portion of the control pad, wherein the second trench structure includes a second trench, an insulator layer and a second shield electrode, and wherein the second shield electrode and the first shield electrode are coupled together, and wherein the second trench structure is formed absent a control electrode; and a dielectric layer formed between the control pad and the second trench structure. - View Dependent Claims (17, 18, 19, 20)
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21. A method of forming a semiconductor device comprising the steps of:
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providing a region of semiconductor material having a major surface and first and second opposing edges; forming a first trench in the region of semiconductor material extending in a direction from the first edge to the second edge; forming a first shield electrode in the first trench; forming a first control electrode in the first trench; forming a second trench in the region of semiconductor material; forming an insulator layer in the second trench; forming a second shield electrode in the second trench overlying the insulator layer; forming a control pad overlying at least a portion of the second trench, wherein the control pad is coupled to the first control electrode; and forming a first shield electrode runner overlying the major surface, wherein the first shield electrode runner is coupled to the second shield electrode.
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Specification