Double Solid Metal Pad with Reduced Area

• US 20100123246A1
• Filed: 11/17/2008
• Published: 05/20/2010
• Est. Priority Date: 11/17/2008
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Liu, Yu-Wen, Chen, Hsien-Wei, Tsai, Hao-Yi, Jeng, Shin-Puu, Chen, Ying-Ju
• Granted Patent: US 8,581,423 B2
• Time in Patent Office: Days
• US Class Current: 257/738
• CPC Class Codes: H01L 2224/02126 Collar structures
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05009 Bonding area integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05093 of a plurality of vias
• CPC Class Codes: H01L 2224/05094 at the center of the internal layers
• CPC Class Codes: H01L 2224/05095 at the periphery of the internal layers
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/05556 in side view
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05684 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48463 : the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/48624 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48639 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48644 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48647 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48655 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48684 : Tungsten (W) as principal constituent
• CPC Class Codes: H01L 2224/48724 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48739 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48744 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48747 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48755 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48784 : Tungsten (W) as principal constituent
• CPC Class Codes: H01L 2224/85 : using a wire connector
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 23/3192 : Multilayer coating
• CPC Class Codes: H01L 23/585 : comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/08 : of an individual bonding area
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/351 : Thermal stress

Abstract

An integrated circuit structure includes a bond pad; an Mtop pad located directly underlying the bond pad; an Mtop-1 pad having at least a portion directly underlying the Mtop pad, wherein at least one of the Mtop pad and the Mtop-1 pad has a horizontal dimension smaller than a horizontal dimension of the bond pad; a plurality of vias interconnecting the Mtop pad and the Mtop-1 pad; and a bond ball on the bond pad. Each of the Mtop pad and the Mtop-1 pad has positive enclosures to the bond ball in all horizontal directions.

Claims

1. An integrated circuit structure comprising:

a bond pad;

an Mtop pad located directly underlying the bond pad;

an Mtop-1 pad having at least a portion directly underlying the Mtop pad, wherein at least one of the Mtop pad and the Mtop-1 pad has a horizontal dimension smaller than a horizontal dimension of the bond pad;

a plurality of vias interconnecting the Mtop pad and the Mtop-1 pad; and

a bond ball on the bond pad, wherein each of the Mtop pad and the Mtop-1 pad has positive enclosures to the bond ball in all horizontal directions.

2. The integrated circuit structure of claim 1, wherein the enclosures are greater than about 2.4 μ

m.

3. The integrated circuit structure of claim 2, wherein the enclosures are greater than about 4 μ

m.

4. The integrated circuit structure of claim 1, wherein the Mtop pad and the Mtop-1 pad are solid conductive pads electrically coupled to the bond pad.

5. The integrated circuit structure of claim 1 further comprising:

a first passivation layer over the Mtop pad, wherein the bond pad has at least a portion in the first passivation layer; and

a second passivation layer over the first passivation layer, wherein the second passivation layer comprises an opening exposing the bond pad.

6. The integrated circuit structure of claim 1 further comprising:

a first passivation layer over the Mtop pad, wherein the bond pad is over the first passivation layer; and

a second passivation layer over the first passivation layer, wherein the bond pad is in the second passivation layer.

7. The integrated circuit structure of claim 6, wherein the Mtop pad and the Mtop-1 pad are dummy pads and are electrically connected to the bond pad.

8. The integrated circuit structure of claim 6, wherein the Mtop pad and the Mtop-1 pad are dummy pads and are electrically disconnected from the bond pad.

9. The integrated circuit structure of claim 1, wherein the Mtop pad has a horizontal dimension greater than a respective horizontal dimension of the Mtop-1 pad.

10. An integrated circuit structure comprising:

a bond pad;

a bond ball bonded onto the bond pad;

a wire attached to the bond ball;

a first passivation layer underlying the bond pad;

a first plurality of vias in the first passivation layer; and

a double solid pad underlying the first passivation layer and comprising;

an Mtop pad electrically coupled to the bond pad through the first plurality of vias, the Mtop pad being a solid conductive pad, wherein edges of the Mtop pad extend horizontally beyond respective edges of the bond ball by enclosures greater than about 2.4 μ

m;

an Mtop-1 pad underlying the Mtop pad; and

a second plurality of vias between and interconnecting the Mtop pad and the Mtop-1 pad, wherein edges of the Mtop-1 pad extend horizontally beyond respective edges of the bond ball by at least the enclosures, and wherein at least one of the Mtop pad and the Mtop-1 pad has a first horizontal dimension less than a respective second horizontal dimension of the bond pad.

11. The integrated circuit structure of claim 10, wherein the first horizontal dimension is less than about a half of the second horizontal dimension.

12. The integrated circuit structure of claim 10, wherein each of the Mtop pad and the Mtop-1 pad has at least a horizontal dimension less than a respective horizontal dimension of the bond pad.

13. The integrated circuit structure of claim 12, wherein all edges of the Mtop pad are co-terminus with respective edges of the Mtop-1 pad.

14. The integrated circuit structure of claim 10, wherein the enclosures are greater than about 4 μ

m.

15. An integrated circuit structure comprising:

a bond pad;

a bond ball bonded onto the bond pad;

a wire attached to the bond ball;

a first passivation layer underlying the bond pad; and

a double solid pad underlying the first passivation layer and comprising;

an Mtop pad having at least a portion directly underlying the bond pad, wherein edges of the Mtop pad extend horizontally beyond respective edges of the bond ball by enclosures with positive values;

an Mtop-1 pad having at least a portion directly underlying the Mtop pad, wherein the Mtop pad and the Mtop-1 pad are dummy pads; and

a first plurality of vias between and interconnecting the Mtop pad and the Mtop-1 pad, wherein edges of the Mtop-1 pad extend horizontally beyond respective edges of the bond ball by at least the enclosures.

16. The integrated circuit structure of claim 15 further comprising a second plurality of vias in the first passivation layer and interconnecting the bond pad and the Mtop pad.

17. The integrated circuit structure of claim 15, wherein the bond pad and the Mtop pad are electrically disconnected.

18. The integrated circuit structure of claim 15, wherein the enclosures are greater than about 2.4 μ

m.

19. The integrated circuit structure of claim 18, wherein the enclosures are greater than about 4 μ

m.