Feature Patterning Methods and Structures Thereof
First Claim
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1. A method of patterning a feature, the method comprising:
- forming a first portion of the feature in a first material layer;
forming a second portion of the feature in the first material layer; and
forming a third portion of the feature in a second material layer.
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Abstract
Methods of patterning features, methods of manufacturing semiconductor devices, and semiconductor devices are disclosed. In one embodiment, a method of patterning a feature includes forming a first portion of the feature in a first material layer. A second portion of the feature is formed in the first material layer, and a third portion of the feature is formed in a second material layer.
6 Citations
21 Claims
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1. A method of patterning a feature, the method comprising:
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forming a first portion of the feature in a first material layer; forming a second portion of the feature in the first material layer; and forming a third portion of the feature in a second material layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of manufacturing a semiconductor device, the method comprising:
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providing a workpiece; forming a first material layer and a second material layer over the workpiece, the second material layer being adjacent the first material layer; patterning a first portion of a feature in the first material layer using a first lithography mask or process; patterning a second portion of the feature in the first material layer using a second lithography mask or process; and forming a third portion of the feature in the second material layer, wherein the third portion of the feature couples the first portion of the feature to the second portion of the feature. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device, comprising:
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a workpiece; a first material layer and a second material layer disposed over the workpiece, the second material layer being adjacent the first material layer; a first portion of a feature being disposed in the first material layer; a second portion of the feature being disposed in the first material layer; and a third portion of the feature being disposed in the second material layer, wherein the third portion of the feature couples the first portion of the feature to the second portion of the feature. - View Dependent Claims (19, 20, 21)
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Specification