SYSTEM FOR PROVIDING A SUBSTANTIALLY UNIFORM POTENTIAL PROFILE

• US 20100123502A1
• Filed: 07/09/2009
• Published: 05/20/2010
• Est. Priority Date: 07/09/2008
• Status: Abandoned Application

• Current Assignee: ASM America Incorporated (ASM International NV)
• Original Assignee: ASM America Incorporated (ASM International NV)
• Inventors: Ivins, Scott D., Bhutta, Imran A.
• Application Number:
  US12/500,433
• Publication Number:
  US 20100123502A1
• Time in Patent Office: Days
• US Class Current: 327/237
• CPC Class Codes: H03H 11/16 Networks for phase shifting
• CPC Class Codes: H03H 11/28 Impedance matching networks
• CPC Class Codes: H03H 7/18 Networks for phase shifting
• CPC Class Codes: H03H 7/38 Impedance-matching networks
• CPC Class Codes: H03K 5/15013 with more than two outputs
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence

Abstract

A system for providing at least two output signals to produce a substantially uniform potential profile includes a signal generator adapted to emit a frequency at least about 30 megahertz, a splitter in communication with the signal generator, and a signal manipulator in communication with the splitter. The splitter is adapted to split the signal of the signal generator into the two output signals, and the signal manipulator is adapted to manipulate a phase, a gain, or an impedance of the two output signals. The signal manipulator manipulates the two output signals so that the two output signals produce the substantially uniform potential profile.

Claims

1. A system for providing at least two output signals to produce a substantially uniform potential profile, the system comprising:

a signal generator, the signal generator adapted to emit a signal with a frequency at least about 30 megahertz;

a splitter in communication with the signal generator, the splitter adapted to split the signal into the at least two output signals; and

a signal manipulator in communication with the splitter, the signal manipulator adapted to manipulate a phase, a gain, or an impedance of the at least two output signals,

wherein the signal manipulator manipulates the at least two output signals so that the at least two output signals produce the substantially uniform potential profile.

2. A system according to claim 1, wherein the signal generator includes a radio frequency signal generator.

3. A system according to claim 1, wherein the signal generator is a plurality of signal generators.

4. A system according to claim 3, wherein each of the plurality of signal generators is in communication with a corresponding splitter.

5. A system according to claim 1, wherein the signal manipulator is a plurality of signal manipulators.

6. A system according to claim 1, wherein the signal manipulator comprises:

a phase adjuster;

a gain adjuster; and

an impedance matcher.

7. A system according to claim 1, wherein the signal manipulator substantially matches the impedance of the at least two output signals to an impedance of a load.

8. A system according to claim 1, wherein the at least two output signals are in communication with a plasma source.

9. A system according to claim 8, wherein the at least two output signals produce the substantially uniform potential profile in a plasma from the plasma source to provide a substantially uniform depositing of a material on a substrate with the substantially uniform potential profile and the plasma.

10. A system for providing at least two output signals to produce a substantially uniform potential profile, the system comprising:

a phase adjuster;

a plurality of signal generators in communication with the phase adjuster, each of the plurality of signal generators adapted to emit a signal with a frequency at least about 30 megahertz with a phase controlled by the phase adjuster; and

an impedance matcher to substantially match an input impedance of a load in communication with the system;

wherein the phase adjuster manipulates the at least two output signals so that the at least two output signals produce the substantially uniform potential profile.

11. A system according to claim 10, wherein the signal generator includes a radio frequency signal generator.

12. A system according to claim 10, wherein the at least two output signals are in communication with a plasma source.

13. A system according to claim 12, wherein the at least two output signals produce the substantially uniform potential profile in a plasma from the plasma source to provide a substantially uniform depositing of a material on a substrate with the substantially uniform potential profile and the plasma.

14. A system for providing at least two signals to produce a substantially uniform potential profile, the system comprising:

a first signal generator adapted to emit a first signal with a first phase shift;

a second signal generator in communication with the first signal generator, the second signal generator adapted to emit a second signal with a second phase shift; and

a controller in communication with the first signal generator and the second signal generator, the controller adapted to incrementally change the first phase shift and the second phase shift at a predetermined time increment,

wherein at least one of the first phase shift and the second phase shift is adjusted to produce the substantially uniform potential profile.

15. A system according to claim 14, wherein the first signal generator includes the controller.

16. A system according to claim 14, wherein the first signal generator includes the second signal generator.

17. A system according to claim 14, wherein the second signal generator is a plurality of second signal generators.

18. A system according to claim 14, wherein the first and second signal generators each include a radio frequency signal generator.

19. A system according to claim 14, wherein the first signal and the second signal are in communication with a plasma source.

20. A system according to claim 19, wherein the first signal and the second signal produce the substantially uniform potential profile in a plasma from the plasma source to provide a substantially uniform depositing of a material on a substrate with the substantially uniform potential profile and the plasma.