GaN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A method of manufacturing a light emitting element, comprising the steps of:
- sequentially forming an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate;
isolating the element by partially etching the P-type semiconductor layer, the active layer, the N-type semiconductor layer and the substrate;
forming a P-type reflective film electrode on the isolated P-type semiconductor layer and forming a first metallic support layer on the whole structure;
removing the substrate; and
forming an N-type electrode on the N-type semiconductor layer.
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Accused Products
Abstract
The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P—GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N—GaN layer.
21 Citations
13 Claims
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1. A method of manufacturing a light emitting element, comprising the steps of:
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sequentially forming an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate; isolating the element by partially etching the P-type semiconductor layer, the active layer, the N-type semiconductor layer and the substrate; forming a P-type reflective film electrode on the isolated P-type semiconductor layer and forming a first metallic support layer on the whole structure; removing the substrate; and forming an N-type electrode on the N-type semiconductor layer. - View Dependent Claims (3, 4, 5, 6, 7)
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2. A method of manufacturing a light emitting element, comprising the steps of:
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sequentially forming an N-type semiconductor layer, an active layer, a P-type semiconductor layer, a P-type reflective film electrode and a first metallic support layer on a substrate; removing the substrate; isolating the element by partially etching the P-type semiconductor layer, the active layer and the N-type semiconductor layer; and forming an N-type electrode on the N-type semiconductor layer.
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8. A method of manufacturing a vertical semiconductor light emitting element, comprising the steps of:
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sequentially forming an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate; forming an insulation film on a lateral side of the N-type semiconductor layer except a portion of the P-type semiconductor layer; forming a P-type electrode on the portion of the P-type semiconductor layer on which the insulation film is not formed; forming a metallic support film layer in such a way to wrap around the P-type and N-type semiconductor layers; removing the substrate; and forming an N-type electrode on the N-type semiconductor layer. - View Dependent Claims (9, 10, 11, 12, 13)
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Specification