METHODS FOR FORMING A CONDUCTIVE MATERIAL, METHODS FOR SELECTIVELY FORMING A CONDUCTIVE MATERIAL, METHODS FOR FORMING PLATINUM, AND METHODS FOR FORMING CONDUCTIVE STRUCTURES
First Claim
1. A method of selectively forming a conductive material, comprising:
- removing a portion of each of an organic material and an underlying material to form at least one opening extending through the organic material and at least partially into the underlying material;
cleaning surfaces exposed by the at least one opening; and
forming a conductive material on exposed surfaces of the underlying material without forming the conductive material on the organic material.
8 Assignments
0 Petitions
Accused Products
Abstract
Methods of selectively forming a conductive material and methods of forming metal conductive structures are disclosed. An organic material may be patterned to expose regions of an underlying material. The underlying material may be exposed to a precursor gas, such as a platinum precursor gas, that reacts with the underlying material without reacting with the remaining portions of the organic material located over the underlying material. The precursor gas may be used in an atomic layer deposition process, during which the precursor gas may selectively react with the underlying material to form a conductive structure, but not react with the organic material. The conductive structures may be used, for example, as a mask for patterning during various stages of semiconductor device fabrication.
34 Citations
24 Claims
-
1. A method of selectively forming a conductive material, comprising:
-
removing a portion of each of an organic material and an underlying material to form at least one opening extending through the organic material and at least partially into the underlying material; cleaning surfaces exposed by the at least one opening; and forming a conductive material on exposed surfaces of the underlying material without forming the conductive material on the organic material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method of selectively depositing platinum, comprising:
-
introducing a platinum precursor gas to a surface of a material exposed through an organic material; and reacting the platinum precursor gas with the surface of the material to form platinum thereon without reacting the platinum precursor gas with the organic material. - View Dependent Claims (10, 11)
-
-
12. A method of forming a conductive material on a semiconductor structure, comprising:
-
removing portions of an organic material to expose regions of an insulative material overlying a substrate; removing the insulative material exposed by the removal of the organic material to form openings in the insulative material, the openings defined by sidewalls of the insulative material and an upper surface of the substrate; and selectively forming a conductive material in the openings. - View Dependent Claims (13, 14, 15, 16, 17)
-
-
18. A method for forming at least one conductive structure on a semiconductor structure, comprising:
-
applying an organic material over an insulative material overlying a substrate; forming at least one opening extending through the organic material and the insulative material to expose the substrate; subjecting the insulative material and the substrate to a precursor gas that selectively reacts with the insulative material and the substrate without reacting with the organic material to form at least one conductive material; and forming a dielectric material over the at least one conductive material and another conductive material over the dielectric material to form at least one capacitor structure. - View Dependent Claims (19, 20, 21, 22, 23)
-
-
24. A method of forming a conductive material, comprising:
-
removing portions of an organic material overlying a material to form at least one aperture exposing a surface of the material; subjecting the material to a precursor gas capable of reacting with the material to deposit a conductive material thereon without depositing the conductive material on the organic material; and removing the organic material.
-
Specification