Light emitting diode

• US 20100127238A1
• Filed: 06/02/2009
• Published: 05/27/2010
• Est. Priority Date: 11/27/2008
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Kyoung-kook, Kim, Jun-youn, Kim, Taek
• Granted Patent: US 8,003,992 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y10S 977/701 Integrated with dissimilar structures on a common substrate
• CPC Class Codes: Y10S 977/762 Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
• CPC Class Codes: Y10S 977/949 Radiation emitter using nanostructure

Abstract

Example embodiments provide a light emitting diode (LED) having improved polarization characteristics. The LED may include wire grid polarizers on and below a light emitting unit. The wire grid polarizers may be arranged at an angle to each other. Thus, because the LED may emit a light beam in a given polarization direction, an expensive component, e.g., a dual brightness enhanced film (DBEF), is not required. Thus, manufacturing costs of a backlight unit including the LED and a display apparatus including the backlight unit may be reduced.

Claims

1. A light emitting diode (LED) comprising:

a reflective layer on a substrate;

a phase retardation layer on the reflective layer;

a first wire grid polarizer on the phase retardation layer and including a plurality of conductive wires arranged in parallel to each other;

a light emitting unit on the first wire grid polarizer; and

a second wire grid polarizer on the light emitting unit and including a plurality of conductive wires arranged in parallel to each other,

wherein the plurality of conductive wires of the first wire grid polarizer are arranged at an angle to the plurality of conductive wires of the second wire grid polarizer.

2. The LED of claim 1, wherein the first and second wire grid polarizers function as an electrode for the light emitting unit.

3. The LED of claim 1, wherein the light emitting unit is of a film type and comprises:

a first semiconductor layer doped with a first type of impurities;

a second semiconductor layer that is not doped; and

a third semiconductor layer doped with a second type of impurities opposite to the first type of impurities,

wherein the second semiconductor layer is an active layer having a quantum well generating a light beam.

4. The LED of claim 3, wherein the first, second and third semiconductor layers are formed of one selected from the group consisting of (Al)(In)GaN, Zn(Mg)O, (Al)InGaAs, (Al)InGaAsP, (Al)InP, (Al)InAs and any mixture thereof.

5. The LED of claim 1, wherein the light emitting unit further comprises:

a plurality of nano-rods vertically disposed between the first wire grid polarizer and the second wire grid polarizer; and

a transparent insulating layer between the plurality of nano-rods.

7. The LED of claim 1, wherein the light emitting unit comprises a plurality of nano-dashes each having a rectangular shape with a longer length than a width thereof,

wherein the plurality of nano-dashes are arranged parallel to each other.

8. The LED of claim 7, wherein each of the plurality of nano-dashes comprises:

a first semiconductor layer doped with a first type of impurities;

a second semiconductor layer that is not doped; and

a third semiconductor layer doped with a second type of impurities opposite to the first type of impurities,

wherein the second semiconductor layer is an active layer having a quantum well generating a light beam.

9. The LED of claim 7, wherein a length ‘

L’ and

a width ‘

W’

of each of the plurality of nano-dashes satisfy the inequalities L/W≧

5 and W≦

λ

/(2n), where λ

is a wavelength of an emitted light beam and ‘

n’

is a refraction index of a material of the plurality of nano-dashes.

10. The LED of claim 7, wherein a width ‘

W’

of each of the plurality of nano-dashes is in the range of about 5 nm to about 500 nm, a length ‘

L’

of each of the plurality of nano-dashes is in the range of about 50 nm to about 5 μ

m, and a pitch between the plurality of nano-dashes is in the range of about 5 nm to about 500 nm.

11. The LED of claim 7, wherein the plurality of conductive wires of the second wire grid polarizer are arranged in a direction perpendicular to a longitudinal direction of each of the plurality of nano-dashes.

12. The LED of claim 7, wherein a space between the plurality of nano-dashes is filled with a transparent dielectric layer.

13. The LED of claim 7, wherein the plurality of nano-dashes are surrounded by air.

14. The LED of claim 7, wherein a passivation-treatment is performed around lateral surfaces of the plurality of nano-dashes.

15. The LED of claim 1, wherein pitches between the conductive wires of the first wire grid polarizers and between the conductive wires of the second wire grid polarizers and a width of each of the conductive wires are less than λ

/2, where λ

is a wavelength of an emitted light beam.

16. The LED of claim 15, wherein a thickness of each of the plurality of conductive wires of the first and second wire grid polarizers is in the range of about 20 nm to about 1000 nm.

17. The LED of claim 1, wherein the first and second wire grid polarizers are formed of any one selected from the group consisting of aluminum (Al), gold (Au), silver (Ag), palladium (Pd), titanium (Ti), platinum (Pt), ZrN, HfN, TiN, ZrB₂, Cr₂N, MgB₂, NbB₂, HfB₂, AlB₂, Ta₂N and NbN, or a metal alloy thereof.

18. The LED of claim 1, wherein the reflective layer is formed of one selected from the group consisting of aluminum (Al), gold (Au), silver (Ag), palladium (Pd), titanium (Ti), platinum (Pt), ZrN, HfN, TiN, ZrB₂, Cr₂N, MgB₂, NbB₂, HfB₂, AlB₂, Ta₂N, NbN or a metal alloy thereof.

19. The LED of claim 1, wherein the phase retardation layer is formed of one selected from the semiconductor materials (In)(Al)GaN, (Al)(In)(Ga)(As)(P) or (Mg)ZnO and the dielectric materials SiO₂, HfO₂ or SiN_x, or any mixture thereof.

20. The LED of claim 1, further comprising:

a buffer layer formed of a semiconductor material and between the wire grid polarizer and the light emitting unit.

6. The LED of claim 6, wherein each of the plurality of nano-rods comprises:

a first semiconductor layer doped with a first type of impurities;

a second semiconductor layer that is not doped; and

a third semiconductor layer doped with a second type of impurities opposite to the first type of impurities,

wherein the second semiconductor layer is an active layer having a quantum well generating a light beam.

21. A light emitting diode (LED) comprising:

a reflective layer on a substrate;

a light emitting unit on the reflective layer; and

a wire grid polarizer on the light emitting unit and including a plurality of conductive wires arranged in parallel to each other,

wherein the light emitting unit includes a plurality of nano-dashes having a rectangular shape with a longer length compared to a width thereof, the plurality of nano-dashes are arranged in parallel to each other, and

wherein each of the reflective layer and the plurality of conductive wires function as an electrode.

22. The LED of claim 21, wherein each of the plurality of nano-dashes comprises:

a first semiconductor layer doped with a first type of impurities;

a second semiconductor layer that is not doped; and

a third semiconductor layer doped with a second type of impurities opposite to the first type of impurities,

wherein the second semiconductor layer is an active layer having a quantum well generating a light beam.

23. The LED of claim 21, wherein a length ‘

L’ and

a width ‘

W’

of each of the plurality of nano-dashes satisfy the inequalities L/W≧

5 and W≦

λ

/(2n), where λ

is a wavelength of an emitted light beam and ‘

n’

is a refraction index of a material of the plurality of nano-dashes.

24. The LED of claim 21, wherein the plurality of conductive wires of the second wire grid polarizer are arranged in a direction perpendicular to a longitudinal direction of each of the plurality of nano-dashes.

25. The LED of claim 21, wherein a pitch between the plurality of conductive wires of the wire grid polarizer and a width of each of the plurality of conductive wires of the wire grid polarizer are less than λ

/2, where λ

is a wavelength of an emitted light beam.