Thin film light emitting diode
3 Assignments
0 Petitions
Accused Products
Abstract
Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.
124 Citations
65 Claims
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1-39. -39. (canceled)
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40. A vertical topology light emitting device, comprising:
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a GaN-based semiconductor structure having a first surface, a second surface and a side surface, the semiconductor structure comprising an active layer that emits light having a first wavelength; a first electrode over the first surface of the semiconductor structure; a second electrode over the second surface of the semiconductor structure; an insulative coating disposed over at least one of the side surface and the first surface of the semiconductor structure; and an on-chip thin film layer over the insulative coating, the thin film layer interacting with the light to form light having a second wavelength, whereby the light having a first wavelength is converted into the light having a second wavelength directly from the device, wherein the first electrode and the second electrode are located over the opposite surfaces of the semiconductor structure, respectively. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54)
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55. A light emitting device comprising:
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a semiconductor structure having a first surface, a second surface and a side surface, the semiconductor structure comprising an active layer that emits light having a first wavelength; a first electrode over the first surface of the semiconductor structure; a second electrode over the second surface of the semiconductor structure; a thin film layer over the first surface of the semiconductor structure, wherein the thin film layer interacts with the light to form light having a second wavelength; and an insulative coating located between the semiconductor structure and the thin film layer, the insulative coating configured to electrically insulate the semiconductor structure from the thin film layer. - View Dependent Claims (56, 57, 58, 59, 60, 61, 62, 63, 64)
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65. A vertical topology light emitting device, comprising:
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an LED chip, the chip comprising; a GaN-based semiconductor structure having a first surface, a second surface and a side surface, the semiconductor structure comprising an active layer that emits light having a first wavelength; a first electrode over the first surface of the semiconductor structure; and a second electrode over the second surface of the semiconductor structure, wherein the first electrode and the second electrode are located over the opposite surfaces of the semiconductor structure, respectively; an insulative coating disposed over at least one of the side surface and the first surface of the semiconductor structure; and an on-chip thin film layer over the insulative coating, the thin film layer interacting with the light to form light having a second wavelength, whereby the light having a first wavelength is converted into the light having a second wavelength directly from the LED chip.
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Specification