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GaN Based LED with Improved Light Extraction Efficiency and Method for Making the Same

  • US 20100127276A1
  • Filed: 01/18/2010
  • Published: 05/27/2010
  • Est. Priority Date: 08/14/2006
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a substrate;

    a light-emitting structure comprising an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, said active layer emitting light of a predetermined wavelength in said active layer when electrons and holes from said n-type GaN layer and said p-type GaN layer, respectively, combine therein; and

    a light scattering layer comprising a GaN crystalline layer characterized by an N-face surface, said N-face surface including features that scatter light of said predetermined wavelength, wherein said light-emitting structure is between said N-face surface and said substrate.

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