GaN Based LED with Improved Light Extraction Efficiency and Method for Making the Same
First Claim
1. A device comprising:
- a substrate;
a light-emitting structure comprising an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, said active layer emitting light of a predetermined wavelength in said active layer when electrons and holes from said n-type GaN layer and said p-type GaN layer, respectively, combine therein; and
a light scattering layer comprising a GaN crystalline layer characterized by an N-face surface, said N-face surface including features that scatter light of said predetermined wavelength, wherein said light-emitting structure is between said N-face surface and said substrate.
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Accused Products
Abstract
A light-emitting device and the method for making the same are disclosed. The device includes a substrate, a light-emitting structure and a light scattering layer. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The light scattering layer includes a GaN crystalline layer characterized by an N-face surface. The N-face surface includes features that scatter light of the predetermined wavelength. The light-emitting structure is between the N-face surface and the substrate.
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Citations
12 Claims
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1. A device comprising:
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a substrate; a light-emitting structure comprising an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, said active layer emitting light of a predetermined wavelength in said active layer when electrons and holes from said n-type GaN layer and said p-type GaN layer, respectively, combine therein; and a light scattering layer comprising a GaN crystalline layer characterized by an N-face surface, said N-face surface including features that scatter light of said predetermined wavelength, wherein said light-emitting structure is between said N-face surface and said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. (canceled)
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10. (canceled)
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11. (canceled)
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12. (canceled)
Specification