DUAL-PHOSPHOR FLAT PANEL RADIATION DETECTOR
First Claim
Patent Images
1. A radiation detector, comprising:
- two scintillator layers that convert irradiated radiation to light; and
a solid state photodetector that detects the light converted by the two scintillator layers and converts the detected light to electrical signals, the solid state photodetector being disposed between the two scintillators,wherein the scattering length of each of the scintillators is not greater than 100 μ
m for the light propagating in the direction parallel to the surface of the scintillator,wherein the distance between the surfaces of the two scintillator layers facing each other is less than or equal to 40 μ
m, andwherein the solid state photodetector comprises;
a photoconductive layer that shows conductivity by receiving the light; and
thin film transistors for outputting electrical signals, the photoconductive layer and thin film transistors being layered on top of another, or arranged in a planar fashion.
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Abstract
A solid state radiation detector capable of improving the sharpness of obtained radiation images. The solid state radiation detector includes: two scintillator layers that convert irradiated radiation to light; and a solid state photodetector, disposed between the two scintillators, that detects the light converted by the two scintillator layers and converts the detected light to electrical signals. Here, the scattering length of each of the scintillators is not greater than 100 μm for the light propagating in the direction parallel to the surface of the scintillator.
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Citations
14 Claims
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1. A radiation detector, comprising:
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two scintillator layers that convert irradiated radiation to light; and a solid state photodetector that detects the light converted by the two scintillator layers and converts the detected light to electrical signals, the solid state photodetector being disposed between the two scintillators, wherein the scattering length of each of the scintillators is not greater than 100 μ
m for the light propagating in the direction parallel to the surface of the scintillator,wherein the distance between the surfaces of the two scintillator layers facing each other is less than or equal to 40 μ
m, andwherein the solid state photodetector comprises; a photoconductive layer that shows conductivity by receiving the light; and thin film transistors for outputting electrical signals, the photoconductive layer and thin film transistors being layered on top of another, or arranged in a planar fashion. - View Dependent Claims (5, 6, 7, 8, 13, 14)
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2-4. -4. (canceled)
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9-12. -12. (canceled)
Specification