POWER SEMICONDUCTOR MODULE WITH SEGMENTED BASE PLATE

• US 20100127371A1
• Filed: 11/26/2008
• Published: 05/27/2010
• Est. Priority Date: 11/26/2008
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Tschirbs, Roman
• Granted Patent: US 8,237,260 B2
• Time in Patent Office: Days
• US Class Current: 257/684
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45424 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/4846 with multiple bonds on the same bonding area
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83825 Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/8384 Sintering
• CPC Class Codes: H01L 2224/8484 Sintering
• CPC Class Codes: H01L 23/13 characterised by the shape
• CPC Class Codes: H01L 23/24 solid or gel at the normal operating temperature of the device H01L23/3135 takes precedence
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/72 : Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01066 : Dysprosium [Dy]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0781 : being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H05K 1/0306 : Inorganic insulating substrates, e.g. ceramic, glass
• CPC Class Codes: H05K 1/142 : Arrangements of planar printed circuit boards in the same plane, e.g. auxiliary printed circuit insert mounted in a main printed circuit
• CPC Class Codes: H05K 3/0061 : onto a metallic substrate, e.g. a heat sink heat sinks for electric apparatus H05K7/20
• CPC Class Codes: H05K 3/284 : for encapsulating mounted components H05K1/185 takes precedence

Abstract

A power semiconductor module with segmented base plate. One embodiment provides a semiconductor module including a base plate and at least two circuit carriers. The base plate includes at least two base plate segments spaced distant from one another. Each of the circuit carriers includes a ceramic substrate provided with at least a first metallization layer. Each of the circuit carriers is arranged on exactly one of the base plate segments. At least two of the circuit carriers are spaced distant from one another.

Claims

1. A power semiconductor module comprising

a base plate comprising at least two base plate segments which are spaced distant from one another;

at least two circuit carriers;

wherein at least a first metallization layer is arranged on each of the circuit carriers, and each of the circuit carriers is arranged on exactly one of the base plate segments; and

at least two of the circuit carriers are spaced distant from one another.

2. The power semiconductor module of claim 1 comprising at least one power semiconductor chip which is arranged on the first metallization layer of one of the circuit carriers.

3. The power semiconductor module of claim 1, comprising:

a common housing wherein the at least two circuit carriers arranged.

4. The power semiconductor module of claim 3, comprising:

a housing cover, wherein the housing is formed from the base plate and the housing cover.

5. The power semiconductor module of claim 1, comprising wherein the base plate forms the bottom of the power semiconductor module.

6. The power semiconductor module of claim 1, comprising wherein at least one of the circuit carriers is one of a direct copper bonding carrier;

a direct aluminum bonding carrier;

an active metal brazing carrier.

7. The power semiconductor module of claim 1, wherein at least one of the base plate segments comprises, substantially consists of, or consists of one of copper;

aluminum;

a metal-matrix composite.

8. The power semiconductor module of claim 1, wherein at least one of the base plate segments comprises, substantially consists of, or consists of one of copper;

aluminum;

an aluminum silicon carbide metal matrix composite;

a copper silicon carbide metal matrix composite;

a aluminum carbide metal matrix composite.

9. The power semiconductor module of claim 1, comprising wherein the thickness of one, some or all of the first metallization layers ranges from 0.1 mm to 0.6 mm.

10. The power semiconductor module of claim 1, comprising wherein the base plate segments are mechanically joined to one another even if they are not joined by a common heat sink.

11. The power semiconductor module of claim 1, comprising wherein the base plate is free of screw holes for screwing the module to a heat sink.

12. A power semiconductor module comprising:

a base plate comprising at least two base plate segments which are spaced distant from one another; and

at least two circuit carriers;

wherein at least a first metallization layer is arranged on each of the circuit carriers;

each of the circuit carriers is arranged on exactly one of the base plate segments;

wherein at least two of the circuit carriers are spaced distant from one another; and

wherein at least one of the circuit carriers comprises a ceramic substrate on which the first metallization layer of the respective circuit carrier is arranged.

13. The power semiconductor module of claim 12, wherein at least one of the ceramic substrates comprises or consists of one of the following materials:

aluminum oxide;

aluminum nitride;

silicon nitride.

14. The power semiconductor module of claim 12, comprising wherein the thickness of one, some or all of the ceramic substrates ranges from 0.2 mm to 2 mm.

15. A power semiconductor module comprising:

a base plate comprising at least two base plate segments which are spaced distant from one another; and

at least two circuit carriers;

wherein at least a first metallization layer is arranged on each of the circuit carriers;

each of the circuit carriers is arranged on exactly one of the base plate segments;

at least two of the circuit carriers are spaced distant from one another; and

wherein at least one of the base plate segments comprises a margin in which the base plate segment overlaps all circuit carriers which are arranged on that base plate segment.

16. The power semiconductor module of claim 15, wherein the margin surrounds all circuit carriers which are arranged on the respective base plate segment.

17. The power semiconductor module of claim 15, comprising wherein the margin is arranged along opposite sides of the respective base plate segment only.

18. The power semiconductor module of claim 15, comprising wherein the width of the margin is less than or equal to 3 mm.

19. A power semiconductor module comprising:

a base plate comprising at least two base plate segments which are spaced distant from one another; and

at least two circuit carriers;

wherein at least a first metallization layer is arranged on each of the circuit carriers;

each of the circuit carriers is arranged on exactly one of the base plate segments;

at least two of the circuit carriers are spaced distant from one another; and

a stiff mounting frame designed to press each of the base plate segments, if the power semiconductor module is mounted to a heat sink, against the heat sink.

20. The power semiconductor module of claim 19, comprising wherein for each of the base plate segments the circuit carriers which are arranged on the respective base plate segment and the electronic components arranged on these circuit carriers are surrounded individually by side walls of the mounting frame.

21. The power semiconductor module of claim 19, comprising wherein for each of the base plate segments an individual housing cover is provided, which contains the circuit carriers arranged on the respective base plate segment, and which further contains the electronic components which are arranged on the respective circuit carriers.

22. The power semiconductor module of claim 19, wherein each of the base plate segments comprises at least one stopper which abuts the mounting frame.

23. The power semiconductor module of claim 19, wherein at least one of the base plate segments comprises a recess, in which a corresponding latching element of the mounting frame engages.

24. The power semiconductor module of claim 23, comprising wherein the recess and the latching element form a press fit joint.