THROUGH SUBSTRATE VIAS FOR BACK-SIDE INTERCONNECTIONS ON VERY THIN SEMICONDUCTOR WAFERS
First Claim
1. A method for forming through-substrate conductor filled vias for back-side electrical or thermal interconnections or both on a thinned substrate, comprising:
- providing desired device regions with contacts on a front surface of an initial substrate having a back side;
forming via cavities to depth d′
from the front surface partly through the initial substrate in desired locations;
filling the via cavities with a conductive material coupled to some device region contacts;
mounting the initial substrate with its front surface coupled to a support structure;
thinning the initial substrate from the back side to provide a final substrate that is thinner than the initial substrate and on whose back surface are exposed internal ends of the conductive material filled vias;
applying any desired back-side interconnect region coupled to the one or more exposed ends of the conductive material filled vias; and
removing the support structure and separating individual device or IC assemblies of the final substrate so as to be available for mounting on a further circuit board, tape or larger circuit.
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Accused Products
Abstract
Through substrate vias for back-side electrical and thermal interconnections on very thin semiconductor wafers without loss of wafer mechanical strength during manufacturing are provided by: forming (101) desired device regions (21) with contacts (22) on the front surface (19) of an initially relatively thick wafer (18′); etching (104) via cavities (29) partly through the wafer (18′) in the desired locations; filling (105) the via cavities (29) with a conductive material (32) coupled to some device region contacts (22); mounting (106) the wafer (18′) with its front side (35) facing a support structure (40); thinning (107) the wafer (18′) from the back side (181) to expose internal ends (3210, 3220, 3230, 3240, etc.) of the conductive material filled vias (321, 322, 323, 324, etc.); applying (108) any desired back-side interconnect region (44) coupled to the exposed ends (3210, 3220, 3230, 3240, etc.) of the filled vias; removing (109) the support structure (40) and separating the individual device or IC assemblies (48) so as to be available for mounting (110) on a further circuit board, tape or larger circuit (50).
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Citations
20 Claims
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1. A method for forming through-substrate conductor filled vias for back-side electrical or thermal interconnections or both on a thinned substrate, comprising:
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providing desired device regions with contacts on a front surface of an initial substrate having a back side; forming via cavities to depth d′
from the front surface partly through the initial substrate in desired locations;filling the via cavities with a conductive material coupled to some device region contacts; mounting the initial substrate with its front surface coupled to a support structure; thinning the initial substrate from the back side to provide a final substrate that is thinner than the initial substrate and on whose back surface are exposed internal ends of the conductive material filled vias; applying any desired back-side interconnect region coupled to the one or more exposed ends of the conductive material filled vias; and removing the support structure and separating individual device or IC assemblies of the final substrate so as to be available for mounting on a further circuit board, tape or larger circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An electronic assembly formed by a process, comprising:
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providing an initial substrate having an active device region proximate a first surface thereof; forming via cavities extending part-way through the initial substrate from the first surface; filling the via cavities with a conductive material at least partly coupled to some part of the active device region; mounting the initial substrate on a temporary support structure with the first surface facing the temporary support structure and a rear face of the initial substrate exposed; removing material from the rear face until a new surface is reached of a thinned substrate on which interior ends of the via cavities filled with the conductive material are exposed; providing a further interconnect region on the new surface making contact to at least some of the interior ends of the via cavities filled with the conductive material; and removing the temporary support structure. - View Dependent Claims (12, 13, 14, 15)
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16. A method for forming electronic assemblies, comprising:
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providing an initial semiconductor substrate of a first thickness and having a region of active devices proximate a first surface thereof; forming via cavities extending part-way through the initial semiconductor substrate from the first surface; filling the via cavities with a conductive metal coupled to some of the active devices; mounting the initial semiconductor substrate on a temporary support structure with the first surface facing the temporary support structure and a rear face of the initial semiconductor substrate exposed; removing material from the rear face until a new surface is reached on which interior ends of the metal filled via cavities are exposed, thereby forming a thinned semiconductor substrate of a second thickness and still having the region of active devices proximate the first surface; providing a further interconnect region on the new surface making contact to some or all of the interior ends of the via cavities filled with the conductive metal; and removing the temporary support structure. - View Dependent Claims (17, 18, 19, 20)
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Specification