RADIO FREQUENCY POWER AMPLIFIER

• US 20100127781A1
• Filed: 08/04/2009
• Published: 05/27/2010
• Est. Priority Date: 11/21/2008
• Status: Active Grant

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: INAMORI, Masahiko, KAIDO, Junji, MATSUDA, Shingo, TATEOKA, Kazuki, MAKIHARA, Hirokazu
• Granted Patent: US 7,834,700 B2
• Time in Patent Office: Days
• US Class Current: 330/296
• CPC Class Codes: H03F 1/0261 with control of the polarisation voltage or current, e.g. gliding Class A
• CPC Class Codes: H03F 2200/18 the bias of the gate of a FET being controlled by a control signal
• CPC Class Codes: H03F 2200/366 Multiple MOSFETs are coupled in parallel
• CPC Class Codes: H03F 2200/375 Circuitry to compensate the offset being present in an amplifier
• CPC Class Codes: H03F 3/19 with semiconductor devices only
• CPC Class Codes: H03F 3/211 using a combination of several amplifiers H03F3/60 takes precedence
• CPC Class Codes: H03F 3/245 with semiconductor devices only

Abstract

A radio frequency signal is input to the bases of transistors via respective capacitors, is amplified, and is output from the collectors of the transistors. The emitter of each transistor is grounded. A bias current input from a bias circuit is supplied to the bases of the transistors via respective resistors both during low-output operation and during high-output operation. The collectors of the transistors are connected via an impedance circuit to a bias voltage input terminal. Therefore, during high-output operation, a direct current offset voltage is generated by the impedance circuit based on a portion of a radio frequency signal output from the collectors, thereby further increasing the bias current.

Claims

1. A radio frequency power amplifier for power amplification of radio frequency signal, comprising:

a plurality of transistors connected in parallel and each having a grounded emitter;

a plurality of first resistors each having a first terminal and a second terminal, wherein a direct current bias voltage is commonly applied to all of the first terminals, and the second terminals are connected to bases of the respective transistors;

a plurality of first capacitors each having a first electrode and a second electrode, wherein the radio frequency signal is input to all of the first electrodes, and the second electrodes are connected to the bases of the respective transistors; and

one or more impedance circuits each having a first terminal and a second terminal, wherein the direct current bias voltage is commonly applied to all of the first terminals, and the second terminals are connected to collectors of the respective transistors,

wherein the impedance circuit conducts a direct-current component.

2. The radio frequency power amplifier of claim 1, further comprising:

a plurality of second capacitors each having a first electrode and a second electrode, wherein the direct current bias voltage is commonly applied to all of the first electrodes, and the second electrodes are connected to the bases of the respective transistors.

3. The radio frequency power amplifier of claim 1, wherein

the impedance circuit has one or more diodes.

4. The radio frequency power amplifier of claim 3, wherein

the diode is a base-emitter diode obtained by creating a short-circuit between a base and a collector of a transistor.

5. The radio frequency power amplifier of claim 1, wherein

the impedance circuit has a circuit including a diode and a resistor connected in series.

6. The radio frequency power amplifier of claim 1, wherein

the impedance circuit has one or more transistors connected in series.

7. The radio frequency power amplifier of claim 1, wherein

the impedance circuit has one or more resistors connected in series.

8. The radio frequency power amplifier of claim 1, further comprising:

a plurality of second resistors coupled between connection points of the second terminals of the respective first resistors and the second electrodes of the respective first capacitors, and the bases of the respective transistors.

9. The radio frequency power amplifier of claim 1, further comprising:

a plurality of third resistors coupled between connection points of the second terminals of the respective first resistors and the bases of the respective transistors, and the second electrodes of the respective first capacitors.

10. The radio frequency power amplifier of claim 1, further comprising:

a terminal to which the radio frequency signal is input; and

a plurality of fourth resistors coupled between the terminal, and the first electrodes of the respective first capacitors.

11. The radio frequency power amplifier of claim 10, wherein

the fourth resistor is formed of a transmission line path.

12. The radio frequency power amplifier of claim 1, wherein

the one or more impedance circuits are provided corresponding to the respective first resistors.

13. The radio frequency power amplifier of claim 1, wherein

the direct current bias voltage is supplied from a bias circuit including at least an emitter follower in an output configuration thereof.