Antenna Integrated in a Semiconductor Chip

• US 20100127937A1
• Filed: 11/25/2008
• Published: 05/27/2010
• Est. Priority Date: 11/25/2008
• Status: Abandoned Application

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Qualcomm, Inc.
• Inventors: Chandrasekaran, Arvind, Gu, Shiqun, Kaskoun, Kenneth
• Application Number:
  US12/277,447
• Publication Number:
  US 20100127937A1
• Time in Patent Office: Days
• US Class Current: 343/700.MS
• CPC Class Codes: G06K 19/07775 the antenna being on-chip
• CPC Class Codes: G06K 19/07779 the inductive antenna being a coil
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/585 comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/19015 including thin film passive components
• CPC Class Codes: H01Q 1/2283 mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
• CPC Class Codes: H01Q 7/00 Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
• CPC Class Codes: Y10T 29/49016 Antenna or wave energy "plumbing" making

Abstract

An antenna structure is integrated in a semiconductor chip. The antenna structure is formed by at least one of: a) one or more through-silicon vias (TSVs), and b) one or more crack stop structures. In certain embodiments, the antenna structure includes an antenna element formed by the TSVs. The antenna structure may further include a directional element formed by the crack stop structure. In certain other embodiments, the antenna structure includes an antenna element formed by the crack stop structure, and the antenna structure may further include a directional element formed by the TSVs.

Claims

1. An integrated antenna structure implemented in an integrated circuit, the integrated antenna structure comprising:

a semiconductor fabrication structure.

2. The antenna structure of claim 1 wherein the semiconductor fabrication structure comprises a through-silicon via (TSV).

3. The antenna structure of claim 2 wherein the semiconductor fabrication structure comprises a crack stop structure.

4. The antenna structure of claim 1 wherein the semiconductor fabrication structure comprises a crack stop structure.

5. The antenna structure of claim 1 wherein the antenna structure comprises an antenna element.

6. The antenna structure of claim 5 wherein the antenna element comprises a serpentine shape.

7. The antenna structure of claim 5 wherein the antenna element is formed by a crack stop structure.

8. The antenna structure of claim 5 wherein the antenna structure further comprises a directional element.

9. The antenna structure of claim 1 wherein the semiconductor fabrication structure comprises both a TSV and a crack stop structure.

10. The antenna structure of claim 9 wherein said TSV and said crack stop structure are coupled together to form an antenna element.

11. The antenna structure of claim 1 wherein the antenna structure comprises a directional element.

12. The antenna structure of claim 11 wherein the directional element is formed by a crack stop structure.

13. The antenna structure of claim 11 wherein the directional element is formed by a TSV.

14. The antenna structure of claim 1 wherein the semiconductor fabrication structure comprises a TSV arranged in an active area of the integrated circuit and a crack stop structure are arranged at least partially around a periphery of the active area.

15. The integrated circuit of claim 1 comprising:

a first die;

a second die stacked on the first die; and

a plurality of TSVs implemented in the first and second dies to form an antenna structure.

16. The integrated circuit of claim 15 wherein the antenna structure is electrically coupled with circuitry implemented on the first die.

17. A method of fabricating an antenna structure integrated in a semiconductor chip, said method comprising:

forming a semiconductor fabrication structure;

wherein said forming comprises forming said semiconductor fabrication structure to implement said antenna structure.

18. The method of claim 17 wherein said semiconductor fabrication structure comprises at least one of:

a) one or more through-silicon vias (TSVs), and b) one or more crack stop structures.

19. The method of claim 17 wherein the forming comprises forming one or more TSVs to implement an antenna element of the antenna structure.

20. The method of claim 19 further comprising:

forming one or more crack stop structures to implement a directional element of the antenna structure.

21. The method of claim 17 wherein the forming comprises forming one or more crack stop structures to implement an antenna element of the antenna structure.

22. The method of claim 21 further comprising:

forming one or more TSVs to implement a directional element of the antenna structure.