ALD APPARATUS AND METHOD

• US 20100129548A1
• Filed: 01/27/2010
• Published: 05/27/2010
• Est. Priority Date: 06/27/2003
• Status: Abandoned Application

• Current Assignee: Sundew Technologies LLC
• Original Assignee: Sundew Technologies LLC
• Inventors: Sneh, Ofer
• Application Number:
  US12/694,990
• Publication Number:
  US 20100129548A1
• Time in Patent Office: Days
• US Class Current: 427/248.100
• CPC Class Codes: C23C 16/4409 characterised by sealing means
• CPC Class Codes: C23C 16/4485 by evaporation without using carrier gas in contact with the source material C23C16/4486 takes precedence
• CPC Class Codes: C23C 16/4488 by in situ generation of reactive gas by chemical or electrochemical reaction
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45557 Pulsed pressure or control pressure
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: C30B 25/165 the flow of the reactive gases

Abstract

Improved apparatus and method for SMFD ALD include a method designed to enhance chemical utilization as well as an apparatus that implements lower conductance out of SMFD-ALD process chamber while maintaining full compatibility with standard wafer transport. Improved SMFD source apparatuses and methods from volatile and non-volatile liquid and solid precursors are disclosed, e.g., a method for substantially controlling the vapor pressure of a chemical source within a source space comprising: sensing the accumulation of the chemical on a sensing surface; and controlling the temperature of the chemical source depending on said sensed accumulation.

Claims

1. An atomic layer deposition system comprising:

a deposition chamber;

a vaporization chamber in fluid communication with said deposition chamber;

a liquid delivery system for delivering liquid to said vaporization chamber, said liquid delivery system comprising;

a container for holding a liquid;

a liquid inlet connected to said container; and

a liquid outlet connected between said container and said vaporization chamber; and

an expandable gas pressure chamber protruding into said container;

wherein said pressure chamber is separated from the interior of said container by a flexible bellow.

2. An atomic layer deposition system as in claim 1 wherein said flexible bellow is made of metal.

3. An atomic layer deposition system as in claim 1, and further including a liquid flow control device between said liquid outlet and said vaporization chamber, said liquid flow control device selected from the group consisting of:

a proportional valve, a metering valve, a variable orifice, and a fixed orifice.

4. An atomic layer deposition system as in claim 3 wherein said flow control device comprises a proportional valve.

5. An atomic layer deposition system as in claim 1, and further comprising a refilling system for automatically refilling said container with liquid.

6. An atomic layer deposition system as in claim 5 wherein said refilling system comprises a proximity sensor attached to said bellows for sensing the proximity of the bottom of said container.

7. An atomic layer deposition system as in claim 1, and further comprising a pneumatic pressure line connected to said flexible bellow.

8. An atomic layer deposition system as in claim 7, and further comprising a solenoid valve between said pneumatic pressure line and said flexible bellow.

9. An atomic layer deposition system as in claim 1, and further comprising a pressure release valve connected to said flexible bellow.

10. An atomic layer deposition system as in claim 9 wherein said pressure relief valve comprises a solenoid valve.

11. A method for delivering a vaporized precursor to a deposition chamber, said method comprising:

providing said deposition chamber and a vaporization chamber, said vaporization chamber in fluid communication with said deposition chamber;

providing a liquid container and a flexible bellows protruding into said liquid container;

flowing a precursor liquid into said liquid container; and

expanding said flexible bellows to force said precursor liquid out of said container into said vaporization chamber.

12. A method as in claim 11, and further comprising controlling the flow of said precursor liquid between said liquid container and said vaporization chamber with a proportional valve.

13. A method as in claim 11 wherein said expanding comprises inflating said flexible bellows with pneumatic pressure.

14. A method as in claim 13, and further comprising depressurizing said flexible bellows to refill said liquid container.

15. A method as in claim 14 wherein said depressurizing is controlled with a solenoid valve.

16. A method as in claim 14, and further comprising sensing the proximity of said flexible bellows to the bottom of said container to trigger said refilling.

17. A method as in claim 14 wherein said refilling is commenced when said container contains enough of said liquid precursor to complete a deposition cycle.

18. A method as in claim 13, and further comprising controlling said inflating with a solenoid valve.