Thin film light emitting diode
3 Assignments
0 Petitions
Accused Products
Abstract
Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.
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Citations
72 Claims
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1-39. -39. (canceled)
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40. A method for manufacturing a vertical topology light emitting device, comprising:
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forming a semiconductor structure comprising a light emitting layer, the light emitting layer emitting light having a first wavelength; forming a first electrode over a first surface of the semiconductor structure; forming a second electrode over a second surface of the semiconductor structure, wherein the second surface is opposite to the first surface; forming an insulative coating over the semiconductor structure; and forming a thin film layer over the insulative coating, wherein the thin film layer interacts with the light to form light having a second wavelength. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54)
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55. A method for manufacturing a vertical topology light emitting device, comprising:
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forming a semiconductor structure comprising a light emitting layer, the light emitting layer emitting light having a first wavelength; forming a first electrode over a first surface of the semiconductor structure; forming a second electrode over a second surface of the semiconductor structure, wherein the second surface is opposite to the first surface; forming an insulative coating over at least a portion of the semiconductor structure, wherein the formation of the insulative coating exposes the first electrode; and forming a thin film layer over the insulative coating, wherein the thin film layer interacts with the light to form light having a second wavelength, and wherein the formation of the thin film layer exposes the first electrode. - View Dependent Claims (56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66)
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67. A method for manufacturing a lateral topology light emitting device, comprising:
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forming a semiconductor structure comprising a first-type semiconductor layer over a substrate, a light emitting layer, and a second-type semiconductor layer, the light emitting layer emitting light having a first wavelength; exposing a portion of the first-type semiconductor layer; forming a first electrode over the portion of the first-type semiconductor layer; forming a second electrode over the second-type semiconductor layer; forming an insulative coating over the semiconductor structure; forming a thin film layer over the insulative coating, wherein the thin film layer interacts with the light to form light having a second wavelength, wherein the insulative coating electrically isolates the semiconductor structure from the thin film layer. - View Dependent Claims (68, 69, 70, 71, 72)
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Specification