SUSCEPTOR AND METHOD FOR MANUFACTURING SILICON EPITAXIAL WAFER

• US 20100129990A1
• Filed: 07/30/2008
• Published: 05/27/2010
• Est. Priority Date: 08/03/2007
• Status: Active Grant

• Current Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Original Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Inventors: Hariya, Hideki, Nishizawa, Tsuyoshi, Hagiwara, Yoshio
• Granted Patent: US 8,021,968 B2
• Time in Patent Office: Days
• US Class Current: 438/478
• CPC Class Codes: H01L 21/6875 characterised by a plurality of individual support members, e.g. support posts or protrusions
• CPC Class Codes: H01L 21/68757 characterised by a coating or a hardness or a material

Abstract

Provided is a susceptor 13 for manufacturing an epitaxial wafer, comprising a mesh-like groove 13b on a mount face on which a silicon substrate W is to be mounted, wherein a coating H of silicon carbide is formed on the mount face, and the coating has a surface roughness of 1 μm or more in centerline average roughness Ra and a maximum height of a protrusion 13p generated in forming the coating H of 5 μm or less. Thus, defects such as warping and slip as well as adhesion of the silicon substrate to the susceptor are prevented.

Claims

1. A susceptor for manufacturing an silicon epitaxial wafer, comprising a mesh-like groove on a mount face to which a single crystal silicon substrate is to be mounted, wherein

a coating of silicon carbide is formed on the mount face,

the coating has a surface roughness of 1 mm or more in centerline average roughness Ra and a maximum height of a protrusion generated in forming the coating of 5 mm or less.

2. The susceptor of claim 1, wherein a surface of the coating is polished.

3. A method for manufacturing a silicon epitaxial wafer, comprising the step of growing in vapor phase a silicon epitaxial layer on a main surface of a single crystal silicon substrate by using the susceptor of claim 1.

4. A method for manufacturing a silicon epitaxial wafer, comprising the step of growing in vapor phase a silicon epitaxial layer on a main surface of a single crystal silicon substrate by using the susceptor of claim 2.