TEXTURING MULTICRYSTALLINE SILICON

• US 20100130014A1
• Filed: 11/26/2008
• Published: 05/27/2010
• Est. Priority Date: 11/26/2008
• Status: Abandoned Application

• Current Assignee: Palo Alto Research Center, Inc. (Xerox Holdings Corp.)
• Original Assignee: Palo Alto Research Center, Inc. (Xerox Holdings Corp.)
• Inventors: Nakayashiki, Kenta, Xu, Baomin, Elrod, Scott A.
• Application Number:
  US12/324,571
• Publication Number:
  US 20100130014A1
• Time in Patent Office: Days
• US Class Current: 438/694
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

Techniques are disclosed for surface texturing multicrystalline silicon using drop jetting technology to form mask or etch patterns on a surface of a multicrystalline silicon substrate.

Claims

1. A method of texturing a surface of a multicrystalline silicon substrate comprising:

drop on demand printing a patterned mask on a surface of a multicrystalline silicon substrate; and

etching the masked surface of the multicrystalline silicon substrate to form an etched surface.

2. The method of claim 1 wherein drop on demand printing a patterned mask comprises thermally drop on demand printing a patterned mask on a surface of a multicrystalline silicon substrate.

3. The method of claim 1 wherein drop on demand printing a patterned mask comprises piezoelectrically drop on demand printing a patterned mask on a surface of a multicrystalline silicon substrate.

4. The method of claim 1 wherein drop on demand printing a patterned mask comprises drop on demand printing a patterned wax mask.

5. The method of claim 1 wherein etching the masked surface comprises wet etching the masked surface to form an etched surface.

6. The method of claim 1 wherein etching the masked surface comprises spraying liquid etching material on the masked surface.

7. The method of claim 1 wherein etching the masked surface comprises dry etching the masked surface to form an etched surface.

8. The method of claim 1 etching the masked surface comprises etching exposed areas of the surface and etching the patterned mask whereby separate removal of the patterned mask can be avoided.

9. A method of texturing a surface of a multicrystalline silicon substrate comprising:

using a drop jetting apparatus to form a patterned mask on a surface of a multicrystalline silicon substrate; and

etching the masked surface of the multicrystalline silicon substrate to form an etched surface.

10. The method of claim 9 using a drop jetting apparatus to form a patterned mask comprises using a thermal drop on demand apparatus to form a patterned mask on a surface of a multicrystalline silicon substrate.

11. The method of claim 9 wherein using a drop jetting apparatus to form a patterned mask comprises using a piezoelectric drop on demand apparatus to form a patterned mask on a surface of a multicrystalline silicon substrate.

12. The method of claim 9 wherein using a drop jetting apparatus to form a patterned mask comprises using a drop on demand apparatus to form a patterned wax mask on a surface of a multicrystalline silicon substrate.

13. The method of claim 9 wherein etching the masked surface comprises wet etching the masked surface to form an etched surface.

14. The method of claim 9 wherein etching the masked surface comprises spraying liquid etching material on the masked surface.

15. The method of claim 9 wherein etching the masked surface comprises dry etching the masked surface to form an etched surface.

16. The method of claim 9 etching the masked surface comprises etching exposed areas of the surface and etching the patterned mask whereby separate removal of the patterned mask can be avoided.

17. A method of texturing a surface of a multicrystalline silicon substrate comprising:

drop on demand printing a patterned etching layer on a surface of a multicrystalline silicon substrate;

allowing the etching layer to etch the surface of the multicrystalline silicon substrate;

cleaning the etched surface of the multicrystalline silicon substrate.

18. The method of claim 17 wherein drop on demand printing comprises piezoelectrically drop on demand printing a patterned etching layer on a surface of a multicrystalline silicon substrate.

19. The method of claim 17 wherein drop on demand printing comprises thermally drop on demand printing a patterned etching layer on a surface of a multicrystalline silicon substrate.

20. A method of texturing a surface of a multicrystalline silicon substrate comprising:

using a drop jetting apparatus to form a patterned etching layer on a surface of a multicrystalline silicon substrate;

allowing the etching layer to etch the surface of the multicrystalline silicon substrate;

cleaning the etched surface of the multicrystalline silicon substrate.

21. The method of claim 20 wherein using a drop jetting apparatus comprises using a piezoelectric drop jetting apparatus to form a patterned etching layer on a surface of a multicrystalline silicon substrate.

22. The method of claim 20 wherein using a drop jetting apparatus comprises using a thermal drop jetting apparatus to form a patterned etching layer on a surface of a multicrystalline silicon substrate.

23. A method of texturing a surface of a multicrystalline silicon substrate comprising:

drop on demand printing a first mask having a first mask pattern on a surface of a multicrystalline silicon substrate;

etching the masked surface of the multicrystalline silicon substrate to form an etched surface;

removing the first mask;

drop on demand printing a second mask having a second mask pattern on the etched surface, wherein the second mask pattern is different from the first mask pattern;

etching the masked surface of the multicrystalline silicon substrate to form a further etched surface;

removing the second mask.

24. The method of claim 23 wherein drop on demand printing a first mask having a first mask pattern comprises piezoelectrically drop on demand printing a first mask on a surface of a multicrystalline silicon substrate, and wherein drop on demand printing a second mask having a second mask pattern on the etched surface comprises piezoelectrically drop on demand printing a second mask having a second mask pattern on the etched surface, wherein the second mask pattern is different from the first mask pattern.

25. The method of claim 23 wherein drop on demand printing a second mask having a second mask pattern on the etched surface comprises drop on demand printing a second mask having a second mask pattern on the etched surface, wherein the second mask pattern covers at least some areas of the surface of the multicrystalline silicon substrate that were not covered by the first pattern.

26. The method of claim 23 wherein drop on demand printing a second mask having a second mask pattern on the etched surface comprises drop on demand printing a second mask having a second mask pattern on the etched surface, wherein the second mask pattern leaves exposed at least some areas of the surface of the multicrystalline silicon substrate that were not etched using the first mask.

27. The method of claim 23 wherein etching the masked surface comprises etching exposed areas of the surface and etching the patterned mask whereby separate removal of the patterned first and/or second mask can be avoided.