PATTERNING METHOD
First Claim
1. A patterning method comprising:
- forming a first film on a substrate;
forming a first resist film on the first film;
processing the first resist film into a first resist pattern having a preset pitch by photolithography;
forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate;
forming a second resist film on the silicon oxide film;
processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and
processing the first film by using the first resist pattern and the second resist pattern as a mask.
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Accused Products
Abstract
Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask.
366 Citations
30 Claims
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1. A patterning method comprising:
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forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A patterning method comprising:
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forming a first film on a substrate; forming, on the first film, a hard mask film made of a material different from that of the first film; forming a first resist film on the hard mask film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the hard mask film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; processing the hard mask film by using the first resist pattern and the second resist pattern as a mask; and processing the first film by using the processed hard mask film as a mask. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification