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PATTERNING METHOD

  • US 20100130015A1
  • Filed: 06/06/2008
  • Published: 05/27/2010
  • Est. Priority Date: 06/08/2007
  • Status: Active Grant
First Claim
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1. A patterning method comprising:

  • forming a first film on a substrate;

    forming a first resist film on the first film;

    processing the first resist film into a first resist pattern having a preset pitch by photolithography;

    forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate;

    forming a second resist film on the silicon oxide film;

    processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and

    processing the first film by using the first resist pattern and the second resist pattern as a mask.

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