FRONT END OF LINE PLASMA MEDIATED ASHING PROCESSES AND APPARATUS
First Claim
1. A front end of line plasma ashing process for removing photoresist, implanted photoresist, polymers and/or residues from a substrate, the process comprising:
- placing the substrate including photoresist, polymers and/or residues into a reaction chamber;
generating a plasma from a gas mixture containing oxygen and nitrogen elements, wherein said plasma has a ratio of active nitrogen to active oxygen that is larger than a ratio of active nitrogen to active oxygen obtainable from a plasma formed of an oxygen gas and nitrogen gas mixture; and
exposing the substrate to the plasma to selectively remove photoresist, polymers and/or residues from the substrate.
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Accused Products
Abstract
Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.
446 Citations
37 Claims
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1. A front end of line plasma ashing process for removing photoresist, implanted photoresist, polymers and/or residues from a substrate, the process comprising:
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placing the substrate including photoresist, polymers and/or residues into a reaction chamber; generating a plasma from a gas mixture containing oxygen and nitrogen elements, wherein said plasma has a ratio of active nitrogen to active oxygen that is larger than a ratio of active nitrogen to active oxygen obtainable from a plasma formed of an oxygen gas and nitrogen gas mixture; and exposing the substrate to the plasma to selectively remove photoresist, polymers and/or residues from the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A front end of line plasma ashing process for removing photoresist, polymers and/or residues from a substrate, the process comprising:
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placing the substrate including photoresist, polymers and/or residues into a reaction chamber; generating a plasma; and exposing the substrate to the plasma to selectively remove photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from a plasma formed from a gas mixture comprising oxygen gas and nitrogen gas. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A plasma apparatus for ashing photoresist, polymers, and/or residues from a substrate, the apparatus comprising:
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a plasma generating component for generating a plasma, wherein the plasma is configured to contain a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from a plasma formed from gas mixtures comprising oxygen gas and nitrogen gas; a process chamber in fluid communication with the plasma generating component, said process chamber housing the substrate; and a material intermediate the plasma and the substrate configured to remove active oxygen from the plasma prior to exposure of the substrate to the plasma. - View Dependent Claims (27, 28, 29)
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30. A plasma apparatus for ashing photoresist, polymers, and/or residues from a substrate, the apparatus comprising:
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a plasma generating component for generating a plasma; a process chamber housing a substrate, said process chamber in fluid communication with the plasma generating component; and a material intermediate the plasma and the substrate configured to enhance active nitrogen in the plasma. - View Dependent Claims (31, 32)
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33. A plasma apparatus for ashing photoresist, polymers, and/or residues from a substrate, the apparatus comprising:
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a gas delivery component comprising at least two independent gas sources, the gas sources in fluid communication with separate plasma generation regions; a process chamber housing a substrate in fluid communication with the plasma generating regions, wherein the plasma generation regions are configured to mix the plasmas formed in the separate plasma generation regions prior to exposing the substrate to the mixed plasma. - View Dependent Claims (34, 35)
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36. A plasma apparatus for ashing photoresist, polymers, and/or residues from a substrate, the apparatus comprising:
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a primary gas source configured to deliver a first gas to form a plasma; a secondary gas source configured to deliver a second gas to the plasma to enhance formation of active nitrogen such that the plasma has a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from a plasma of oxygen gas and nitrogen gas. - View Dependent Claims (37)
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Specification