Fluid Delivery for Scanning Probe Microscopy

• US 20100132076A1
• Filed: 03/06/2009
• Published: 05/27/2010
• Est. Priority Date: 09/09/2002
• Status: Active Grant

• Current Assignee: Terraspan LLC
• Original Assignee: General Nanotechnology LLC
• Inventors: Kley, Victor B.
• Granted Patent: US 7,930,766 B2
• Time in Patent Office: Days
• US Class Current: 850/21
• CPC Class Codes: B82Y 35/00 Methods or apparatus for measurement or analysis of nanostructures
• CPC Class Codes: B82Y 99/00 Subject matter not provided for in other groups of this subclass
• CPC Class Codes: G01Q 30/12 Fluid environment
• CPC Class Codes: G01Q 30/14 Liquid environment
• CPC Class Codes: G01Q 60/00 Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
• CPC Class Codes: G01Q 80/00 Applications, other than SPM, of scanning-probe techniques manufacture or treatment of nanostructures B82B3/00; recording or reproducing information using near-field interaction G11B9/12, G11B11/24, G11B13/08
• CPC Class Codes: Y10S 977/849 with scanning probe
• CPC Class Codes: Y10S 977/856 including etching/cutting
• CPC Class Codes: Y10S 977/902 Specified use of nanostructure
• CPC Class Codes: Y10T 29/53 Means to assemble or disassemble

Abstract

The following invention pertains to the introduction of a gas (or fluid) around a SPM probe or nanotool™ to control chemical activity e.g. oxygen to promote oxidation, argon to inhibit oxidation or clean dry air (CDA) to inhibit moisture to control static charging due to the action of the probe or nanotools and to provide vacuum at and around the tip and substrate area. The invention can also produce electrical current for use with active electronic devices on, in or near the body of the device. In addition by use of a fluid like water, certain oils, and other liquids in conjunction with specific tip structure either electric discharge machining can be used at the tip area on the tip itself (in conjunction with a form structure on the work piece) or on a work piece beneath the tip to shape, polish and remove material at very small scales (10 microns to 1 nm or less).

Claims

1. A micro electromechanical systems (MEMS) device comprising:

scanning probe microscopy (SPM) component;

an amount of an isotope disposed on the SPM component;

a circuit for collecting particles emitted from the isotope to store an accumulated charge; and

a contact formed on the circuit to provide an amount of current that can be produced from the accumulated charge.

2. The MEMS device of claim 1 wherein the amount of isotope comprises an isotopic charge emitter, wherein the accumulated charge can serve as a source for local electrical power to operate active electronic elements located on or near the MEMS device.

3. The MEMS device such as in claim 1 wherein the amount of isotope comprises a plurality of isotopic regions, each of which contains 1 microcurie or less of radioactivity.

6. The device such as recited in claim 1 in which an integrated or external circuit monitors the charge build up which is inversely proportional to a rate of a flow of gas passing through the system to remove charge from the channels.

15. The device as recited in claim 1 wherein the circuit comprises a diode or electrically similar region in close proximity to the emitted radiation.

16. The device as recited in claim 1 wherein the circuit comprises a diode formed by an intrinsic layer of diamond coupled with a doped layer of diamond.

21. The device in claim 1 further comprising a plurality of layers, the layers comprising the device consist of a conductor, intrinsic diamond and a conductor as successive layers.

22. The device of claim 1 further comprising a plurality of layers, the layers comprising the device consist of boron doped diamond, intrinsic diamond and a conductor as successive layers.

23. The device of claim 1 further comprising a plurality of layers, the layers comprising the device consist of boron doped diamond, intrinsic diamond and a doped SiC as successive layers.

24. The device of claim 1 further comprising a plurality of layers, the layers comprising the device consist of boron doped diamond, intrinsic silicon carbide and a conductor as successive layers.

25. The device of claim 1 further comprising a plurality of layers, the layers comprising the device consist of boron doped diamond, intrinsic silicon carbide and doped silicon carbide as successive layers.

26. The MEMS device of claim 1 further comprising one or more fluidic channels and one or more control valves to control a flow of fluid in the one or more fluidic channels.

27. The MEMS device of claim 26 further comprising one or more movable members formed in the SPM component, at least one fluidic channel being formed in each movable member, wherein fluid flow through the at least one fluidic channel produces movement in the movable members.

28. The MEMS device of claim 27 further comprising one or more control valves to control a flow of fluid in the one or more fluidic channels.

29. The MEMS device of claim 28 further comprising one or more movable members formed in the SPM component, at least one fluidic channel being formed in a first movable member.

30. The MEMS device of claim 27 further comprising one or more control valves to control a flow of fluid in the one or more fluidic channels.

31. The MEMS device as recited in claim 1 wherein the isotope is Americium 241.

32. The MEMS device as recited in claim 1 wherein the amount of isotope is disposed in a single isotopic region on the SPM device, wherein the single isotopic region contains 1 microcurie or less of radioactivity.

33. The MEMS device as recited in claim 1 wherein the amount of isotope comprises a plurality of isotopic regions, each of which contains 1 microcurie or less of radioactivity.

34. The MEMS device as recited in claim 1 further comprising a circuit for monitoring changes in charge accumulation in the fluidic channel as the isotope is moved by fluid flow.

35. The device of claim 1 further comprising a first layer of conductive material, intrinsic diamond, and a second layer of conductive material as successive layers.

36. The device of claim 1 further comprising a layer of boron doped diamond, intrinsic diamond, and a conductor as successive layers.

37. The device of claim 1 further comprising a layer of boron doped diamond, intrinsic diamond, and doped SiC as successive layers.

38. The device of claim 1 further comprising a layer of boron doped diamond, intrinsic silicon carbide, and a conductor as successive layers.

39. The device of claim 1 further comprising a layer of boron doped diamond, intrinsic silicon carbide, and doped silicon carbide as successive layers.

4. (canceled)

5. A method of nanoelectric discharge machining in which the electric discharge tool also serves to image or measure the surface to be machined by a Scanning Probe Microscopy Method.

7. Any outflow, inflow, circulating or recirculating fluid system in which a Scanning Probe Microscopy means is integrated with the fluid transfer means.

8. Any outflow, inflow, circulating or recirculating fluid system in which nanomachining or surface modification by any means is conducted by a means integrated with said means.

9. The device as recited in claim 8 in which local or integrated pumps and/or valves provide for the delivery and/or control of fluids or gases.

10. The device as recited in claim 9 in which the fluid channel also functions as an active mechanical or electromechanical member.

11. The device as recited in claim 9 in which the mechanical or electromechanical members act as passive elements.

12. The device as recited in claim 9 in which the mechanical or electromechanical members act as passive elements and are activated or operated by external mechanical, vacuum, or fluid induced forces.

13. The device as recited in claim 9 in which the mechanical or electromechanical members act independently to provide new functions.

14. The device as recited in claim 9 in which the mechanical or electromechanical members act independently to provide scanning or motion for any reason in or near the plane of the cantilever.

19. The device as recited in claim 9 in which the mechanical or electromechanical members act independently and are electrically sensed and this information or sense current or voltage used to control the movable members.

20. The device as recited in claim 9 in which the mechanical or electromechanical members act independently and are electrically sensed and this information or sense current or voltage used to obtain a particular motion or displacement of the structure the arms act on including obtaining zero displacement.

17. and 18. (canceled)