Plasma Processing Apparatus

• US 20100132888A1
• Filed: 02/03/2010
• Published: 06/03/2010
• Est. Priority Date: 05/17/2005
• Status: Abandoned Application

• Current Assignee: Akira Kagoshima, Daisuke Shiraishi, Eiji Matsumoto, Hideyuki Yamamoto, Hiromichi Enami, Shoji Ikuhara, Yosuke Karashima
• Original Assignee: Akira Kagoshima, Daisuke Shiraishi, Eiji Matsumoto, Hideyuki Yamamoto, Hiromichi Enami, Shoji Ikuhara, Yosuke Karashima
• Inventors: Matsumoto, Eiji, Shiraishi, Daisuke, Yamamoto, Hideyuki, Karashima, Yosuke, IKUHARA, Shoji, Enami, Hiromichi, Kagoshima, Akira
• Application Number:
  US12/699,382
• Publication Number:
  US 20100132888A1
• Time in Patent Office: Days
• US Class Current: 156/345.240
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring

Abstract

A plasma processing apparatus includes a plasma processing main frame, and an apparatus controller controlling the plasma processing main frame. The plasma processing main frame has a vacuum process chamber, an exhaust device, a mass flow controller, a stage electrode receiving a workpiece, a high-frequency electrical source to, and a transfer device placing the workpiece on the stage electrode and carrying out the processed workpiece. The apparatus controller controls the plasma processing main frame in accordance with a predetermined procedure and is provided with a diagnosis device which acquires a plurality of recipes for processing workpieces carried in the chamber and apparatus parameters of the plasma processing apparatus when a specific recipe of the above recipes is executed, whereby the condition of the plasma processing main frame is diagnosed based on the acquired apparatus parameters.

Claims

1. A plasma processing apparatus comprising:

a plasma processing main frame comprising;

a vacuum process chamber;

an exhaust device evacuating the vacuum process chamber;

a mass flow controller supplying a process gas into the vacuum process chamber;

a stage electrode receiving a workpiece in the vacuum process chamber and holding it by adsorption;

a high-frequency electrical source applying a high-frequency electrical power to the supplied process gas to generate plasma;

a transfer device placing the workpiece on the stage electrode and taking out the workpiece after it is processed; and

an apparatus controller controlling the plasma processing main frame in accordance with a predetermined procedure;

wherein the apparatus controller comprises a diagnosis device which acquires a plurality of recipes, one of the plurality of recipes corresponding to the workpiece and being applied for processing of the workpiece, and wherein apparatus parameters of the plasma processing apparatus are acquired when a specific recipe of the plurality of recipes is executed, the diagnosis device diagnosing whether the condition of the plasma processing main frame is good or not based on the acquired apparatus parameters;

wherein the specific recipe is a recipe having at least one process condition different from a process condition under which normal operation is performed;

wherein the at least one process condition of the specific recipe is a process for supplying a predetermined amount of a gas into the vacuum process chamber via the mass flow controller and setting an exhaust speed of the exhaust device so that the pressure inside the process chamber becomes close to a full scale level of a pressure gage;

wherein the setting of the exhaust speed of the exhaust device includes controlling an opening amount of an exhaust value of the exhaust device; and

wherein the diagnosis device compares an ultimate value of the gas pressure inside the vacuum process chamber as measured by the close to the full scale level of the pressure gage based upon the predetermined amount of the gas supplied with a registered value of the pressure gage to diagnose whether the condition of the plasma processing main frame is good or not.

2. The plasma processing apparatus according to claim 1, wherein a dummy wafer is utilized as the workpiece on the stage electrode when the specific recipe is executed.

3. The plasma processing apparatus according to claim 1, wherein the mass flow controller enables changes in gas flow rate, and wherein the diagnosis device enables checking of the operation of the mass flow controller by detection of a small amount of change in gas flow rate of the mass flow controller when the specific recipe is executed.