TRANSPARENT CONDUCTIVE FILM WITH HIGH TRANSMITTANCE FORMED BY A REACTIVE SPUTTER DEPOSITION

• US 20100133094A1
• Filed: 12/02/2008
• Published: 06/03/2010
• Est. Priority Date: 12/02/2008
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Tanner, David, Le, Hien-Minh Huu
• Application Number:
  US12/326,571
• Publication Number:
  US 20100133094A1
• Time in Patent Office: Days
• US Class Current: 204/192.290
• CPC Class Codes: C23C 14/0036 Reactive sputtering
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/3492 Variation of parameters during sputtering

Abstract

Methods for sputter depositing a transparent conductive layer are provided in the present invention. The transparent conductive layer may be utilized as a contact layer on a substrate or a back reflector in a photovoltaic device. In one embodiment, the method includes supplying a gas mixture into the processing chamber, sputtering source material from a target disposed in the processing chamber, wherein the target is fabricated from a zinc containing material having an aluminum containing dopant concentration less than 3 percent by weight, and reacting the sputtered material with the gas mixture.

Claims

1. A method of sputter depositing a transparent conductive layer, comprising:

supplying a gas mixture into a processing chamber;

sputtering a source material from a target disposed in the processing chamber, wherein the target is fabricated from a zinc containing material having an aluminum containing dopant concentration less than 3 percent by weight; and

reacting the sputtered material with the gas mixture to deposit a transparent conductive layer on a substrate.

2. The method of claim 1, wherein supplying the gas mixture further comprises:

supplying a gas mixture selected from a group consisting of O₂, N₂, Ar, He and H₂ to the process chamber.

3. The method of claim 1, wherein the gas mixture includes at least one of O₂, H₂ and Ar.

4. The method of claim 1, wherein the gas mixture includes oxygen gas and an argon gas, wherein the oxygen gas is supplied less than 10 percent by volume in the gas mixture and the argon gas is supplied between about 90 and about 100 percent by volume in the gas mixture.

5. The method of claim 4, further comprising:

supplying oxygen gas at a flow rate between about 0 sccm and about 100 sccm; and

supplying argon gas at a flow rate between about 150 sccm and about 500 sccm.

6. The method of claim 1, wherein the gas mixture includes oxygen gas, a hydrogen gas, and an argon gas, wherein the oxygen gas is supplied less than 10 percent by volume in the gas mixture, and the hydrogen gas is supplied at less than 10 percent by volume in the gas mixture, and the argon gas is supplied between about 80 and about 100 percent in the gas mixture.

7. The method of claim 6, further comprising:

supplying O₂ gas at a flow rate between about 0 sccm and about 100 sccm;

supplying H₂ gas at a flow rate between about 0 sccm and about 100 sccm; and

supplying Ar gas at a flow rate between about 100 sccm and about 500 sccm.

8. The method of claim 1, wherein the aluminum containing dopant formed in the target includes at least one of aluminum alloy or aluminum oxide, and the zinc containing material includes at least one of zinc alloy or zinc oxide.

9. The method of claim 1, wherein the aluminum containing dopant concentration of the target is about 0.25 percent by weight.

10. The method of claim 1, wherein sputtering source material from the target further comprises:

applying a RF power between about 1000 Watts and about 60000 Watts to the target.

11. The method of claim 1 further comprising:

depositing a photoelectric conversion unit over the transparent conductive layer.

12. A method of sputter depositing a transparent conductive layer, comprising:

providing a substrate in a processing chamber;

supplying a gas mixture into the processing chamber;

sputtering source material from a target disposed in the processing chamber;

reacting the sputtered material with the gas mixture; and

forming a transparent conductive layer on the substrate from the reacted sputtered material, wherein the transparent conductive layer is a zinc oxide layer having an aluminum oxide dopant concentration between about 0.25 percent by weight and about 3 percent by weight.

13. The method of claim 12, wherein the target is fabricated from a zinc containing material having an aluminum containing dopant concentration less than about 3 percent by weight.

14. The method of claim 12, wherein gas mixture includes at least one of O₂, H₂ and Ar.

15. The method of claim 12, wherein the gas mixture includes an oxygen gas and an argon gas, wherein the oxygen gas is supplied less than 10 percent in the gas mixture and the argon gas is supplied between about 90 and about 100 percent in the gas mixture.

16. The method of claim 12, wherein the gas mixture includes an oxygen gas, a hydrogen gas, and an argon gas, wherein the oxygen gas is supplied at less than 10 percent by volume in the gas mixture, and the hydrogen gas is supplied at less than 10 percent by volume in the gas mixture, and the argon gas is supplied at between about 80 and about 100 percent in the gas mixture.

17. The method of claim 12, wherein sputtering source material from the target further comprises:

applying a RF power between about 1000 Watts and about 60000 Watts to the target.

18. A method of sputter depositing a transparent conductive layer, comprising:

providing a substrate in a processing chamber;

supplying a gas mixture comprising at least an argon gas and an oxygen gas into the processing chamber;

sputtering source material from a target fabricated from a zinc oxide material having an aluminum oxide dopant less than 3 percent by weight disposed in the processing chamber; and

reacting the sputtered source material with the gas mixture to form a transparent conductive layer on the substrate.

19. The method of claim 18, wherein the transparent conductive layer is a ZnO layer having an Al₂O₃ dopant concentration between about 0.25 percent by weight and about 3 percent by weight.

20. The method of claim 18, wherein the oxygen gas is supplied at less than 10 percent in the gas mixture and the argon gas is supplied at between about 90 and about 100 percent in the gas mixture.

21. The method of claim 18, wherein the gas mixture further comprises a hydrogen gas.

22. The method of claim 21, wherein the oxygen gas is supplied at less than 10 percent by volume in the gas mixture, and the hydrogen gas is supplied at less than 10 percent by volume in the gas mixture, and the argon gas is supplied at between about 80 and about 100 percent in the gas mixture.

23. A method of sputter depositing a transparent conductive layer, comprising:

providing a substrate in a processing chamber;

supplying a gas mixture comprising at least an argon gas and an oxygen gas into the processing chamber;

sputtering source material from a target fabricated from a zinc oxide material having an aluminum oxide dopant less than 3 percent by weight disposed in the processing chamber; and

reacting the sputtered source material with the gas mixture to form a transparent conductive layer on the substrate, wherein the transparent conductive layer is a ZnO layer having an Al₂O₃ dopant concentration between about 0.25 percent by weight and about 3 percent by weight.