×

PLASMA ETCHING APPARATUS

  • US 20100133234A1
  • Filed: 02/04/2010
  • Published: 06/03/2010
  • Est. Priority Date: 07/30/2004
  • Status: Active Grant
First Claim
Patent Images

1. A plasma etching method by using a plasma etching apparatus having a depressurizable processing chamber;

  • a lower electrode for mounting thereon a substrate to be processed in the processing chamber;

    an upper electrode facing the lower electrode in the processing chamber with a plasma generation region formed therebetween;

    a radio frequency power supply unit for applying a radio frequency power between the upper electrode and the lower electrode to thereby form a radio frequency electric field in the plasma generation region, the method comprising;

    supplying a first gas including etchant gas to an upper gas inlet to introduce the first gas through the upper electrode into the plasma generation region; and

    feeding a second gas including dilution gas to a side gas inlet to introduce the second gas through a sidewall of the processing chamber into the plasma generation region.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×