SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20100133531A1
• Filed: 11/30/2009
• Published: 06/03/2010
• Est. Priority Date: 12/01/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: AKIMOTO, Kengo, SASAKI, Toshinari
• Granted Patent: US 8,318,551 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A gate electrode layer over a substrate; a gate insulating layer over the gate electrode layer; a first source electrode layer and a first drain electrode layer over the gate insulating layer; an oxide semiconductor layer over the gate insulating layer; and a second source electrode layer and a second drain electrode layer over the oxide semiconductor layer. A first part, a second part, and a third part of a bottom surface are in contact with the first source electrode layer, the first drain electrode layer, and the gate insulating layer respectively. A first part and a second part of the top surface are in contact with the second source electrode layer and the second drain electrode layer respectively. The first source electrode layer and the first drain electrode layer are electrically connected to the second source electrode layer and the second drain electrode layer respectively.

Claims

1. A semiconductor device comprising:

a gate electrode layer over a substrate;

a gate insulating layer over the gate electrode layer;

a first source electrode layer and a first drain electrode layer over the gate insulating layer;

an oxide semiconductor layer over the gate insulating layer; and

a second source electrode layer and a second drain electrode layer over the oxide semiconductor layer,

wherein a first part of a bottom surface of the oxide semiconductor layer is in contact with the first source electrode layer, a second part of the bottom surface is in contact with the first drain electrode layer, and a third part of the bottom surface is in contact with the gate insulating layer,

wherein a first part of a top surface of the oxide semiconductor layer is in contact with the second source electrode layer, and a second part of the top surface is in contact with the second drain electrode layer, and

wherein the first source electrode layer is electrically connected to the second source electrode layer, and the first drain electrode layer is electrically connected to the second drain electrode layer.

2. The semiconductor device according to claim 1,

wherein the oxide semiconductor layer contains at least a material selected from materials consisting of indium, gallium, and zinc.

3. The semiconductor device according to claim 1,

wherein the third part of the bottom surface of the oxide semiconductor layer has higher hydrogen concentration than a channel formation region of the oxide semiconductor layer.

4. The semiconductor device according to claim 1,

wherein the first part of the top surface of the oxide semiconductor layer and the second part of the top surface of the oxide semiconductor layer have higher hydrogen concentration than a channel formation region of the oxide semiconductor layer.

5. The semiconductor device according to claim 1,

wherein the third part of the bottom surface of the oxide semiconductor layer is overlapped with the gate electrode.

6. A semiconductor device comprising:

a gate electrode layer, a first source electrode layer, and a first drain electrode layer each formed using the same material layer over a substrate;

a gate insulating layer over the gate electrode layer;

an oxide semiconductor layer over the gate insulating layer, the first source electrode layer, and the first drain electrode layer; and

a second source electrode layer and a second drain electrode layer over the oxide semiconductor layer, the first source electrode layer, and the first drain electrode layer,

wherein a first part of a bottom surface of the oxide semiconductor layer is in contact with the first source electrode layer, a second part of the bottom surface is in contact with the first drain electrode layer, and a third part of the bottom surface is in contact with the gate insulating layer,

wherein a first part of a top surface of the oxide semiconductor layer is in contact with the second source electrode layer, and a second part of the top surface is in contact with the second drain electrode layer, and

wherein the first source electrode layer is electrically connected to the second source electrode layer, and the first drain electrode layer is electrically connected to the second drain electrode layer.

7. The semiconductor device according to claim 6,

wherein the oxide semiconductor layer contains at least a material selected from materials consisting of indium, gallium, and zinc.

8. The semiconductor device according to claim 6,

wherein the third part of the bottom surface of the oxide semiconductor layer has higher hydrogen concentration than a channel formation region of the oxide semiconductor layer.

9. The semiconductor device according to claim 6,

wherein the first part of the top surface of the oxide semiconductor layer and the second part of the top surface of the oxide semiconductor layer have higher hydrogen concentration than a channel formation region of the oxide semiconductor layer.

10. The semiconductor device according to claim 6,

wherein the third part of the bottom surface of the oxide semiconductor layer is overlapped with the gate electrode.

11. A method for manufacturing a semiconductor device comprising:

forming a gate electrode layer over a substrate;

forming a gate insulating layer over the gate electrode layer;

forming a first source electrode layer and a first drain electrode layer over the gate insulating layer;

forming an oxide semiconductor layer over the gate insulating layer, the first source electrode layer, and the first drain electrode layer so that a first part of a bottom surface of the oxide semiconductor layer is in contact with the first source electrode layer, a second part of the bottom surface is in contact with the first drain electrode layer, and a third part of the bottom surface is in contact with the gate insulating layer; and

forming a second source electrode layer and a second drain electrode layer over the oxide semiconductor layer, the first source electrode layer, and the first drain electrode layer so that a first part of a top surface of the oxide semiconductor layer is in contact with the second source electrode layer, and a second part of the top surface is in contact with the second drain electrode layer,

wherein the first source electrode layer is electrically connected to the second source electrode layer, and the first drain electrode layer is electrically connected to the second drain electrode layer.

12. The method for manufacturing a semiconductor device according to claim 11,

wherein the oxide semiconductor layer contains at least a material selected from materials consisting of indium, gallium, and zinc.

13. The method for manufacturing a semiconductor device according to claim 11,

wherein the first source electrode layer and the first drain electrode layer contain hydrogen.

14. The method for manufacturing a semiconductor device according to claim 11,

wherein the second source electrode layer and the second drain electrode layer contain hydrogen.

15. The method for manufacturing a semiconductor device according to claim 11, further comprising a step of performing thermal treatment after forming the second source electrode layer and the second drain electrode layer to change a hydrogen concentration of the oxide semiconductor layer.

16. A method for manufacturing a semiconductor device comprising:

forming a conductive film over a substrate;

forming a gate electrode layer, a first source electrode layer, and a first drain electrode layer using the conductive film;

forming a gate insulating layer over the gate electrode layer;

forming an oxide semiconductor layer over the gate insulating layer, the first source electrode layer and the first drain electrode layer so that a first part of a bottom surface of the oxide semiconductor layer is in contact with the first source electrode layer, a second part of the bottom surface is in contact with the first drain electrode layer, and a third part of the bottom surface is in contact with the gate insulating layer; and

forming a second source electrode layer and a second drain electrode layer over the oxide semiconductor layer, the first source electrode layer, and the first drain electrode layer so that a first part of a top surface of the oxide semiconductor layer is in contact with the second source electrode layer, and a second part of the top surface is in contact with the second drain electrode layer,

wherein the first source electrode layer is electrically connected to the second source electrode layer, and the first drain electrode layer is electrically connected to the second drain electrode layer.

17. The method for manufacturing a semiconductor device according to claim 16,

wherein the oxide semiconductor layer contains at least a material selected from materials consisting of indium, gallium, and zinc.

18. The method for manufacturing a semiconductor device according to claim 16,

wherein the first source electrode layer and the first drain electrode layer contain hydrogen.

19. The method for manufacturing a semiconductor device according to claim 16,

wherein the second source electrode layer and the second drain electrode layer contain hydrogen.

20. The method for manufacturing a semiconductor device according to claim 16, further comprising a step of performing thermal treatment after forming the second source electrode layer and the second drain electrode layer to change a hydrogen concentration of the oxide semiconductor layer.