×

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20100133531A1
  • Filed: 11/30/2009
  • Published: 06/03/2010
  • Est. Priority Date: 12/01/2008
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a gate electrode layer over a substrate;

    a gate insulating layer over the gate electrode layer;

    a first source electrode layer and a first drain electrode layer over the gate insulating layer;

    an oxide semiconductor layer over the gate insulating layer; and

    a second source electrode layer and a second drain electrode layer over the oxide semiconductor layer,wherein a first part of a bottom surface of the oxide semiconductor layer is in contact with the first source electrode layer, a second part of the bottom surface is in contact with the first drain electrode layer, and a third part of the bottom surface is in contact with the gate insulating layer,wherein a first part of a top surface of the oxide semiconductor layer is in contact with the second source electrode layer, and a second part of the top surface is in contact with the second drain electrode layer, andwherein the first source electrode layer is electrically connected to the second source electrode layer, and the first drain electrode layer is electrically connected to the second drain electrode layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×