System and Method for Manufacturing Thick and Thin Film Devices Using a Donee Layer Cleaved From a Crystalline Donor
First Claim
1. A system for manufacturing electronic and/or optoelectronic structures from at least one crystalline donor having a plurality of donee layers, each of the electronic and/or optoelectronic structures comprising a device layer containing at least one of 1) an electronic device and 2) an optoelectronic device, the system comprising:
- an elongate handle;
a first roll for paying out the elongate handle;
at least one crystalline donor located downstream of said first roll, said at least one crystalline donor containing a plurality of donee layers;
a donee-layer affixer operatively located downstream of said first roll and operatively configured for affixing each of said plurality of donee layers to the elongate handle in succession with one another; and
a donee-layer cleaver operatively located relative to said donee-layer affixer and operatively configured to cleave each of the plurality of donee layers from said crystalline donor in succession with one another.
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Accused Products
Abstract
Various embodiments of fabricated crystalline-based structures for the electronics, optoelectronics and optics industries are disclosed. Each of these structures is created in part by cleaving a donee layer from a crystalline donor, such as a micaceous/lamellar mass comprising a plurality of lamelliform sheets separable from each other along relatively weak cleavage planes. Once cleaved, one or more of these lamelliform sheets become the donee layer. The donee layer may be used for a variety of purposes, including a crystalline layer for supporting heteroepitaxial growth of one or more semiconductor layers thereon, an insulating layer, a barrier layer, a planarizing layer and a platform for creating useful structures, among others.
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Citations
29 Claims
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1. A system for manufacturing electronic and/or optoelectronic structures from at least one crystalline donor having a plurality of donee layers, each of the electronic and/or optoelectronic structures comprising a device layer containing at least one of 1) an electronic device and 2) an optoelectronic device, the system comprising:
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an elongate handle; a first roll for paying out the elongate handle; at least one crystalline donor located downstream of said first roll, said at least one crystalline donor containing a plurality of donee layers; a donee-layer affixer operatively located downstream of said first roll and operatively configured for affixing each of said plurality of donee layers to the elongate handle in succession with one another; and a donee-layer cleaver operatively located relative to said donee-layer affixer and operatively configured to cleave each of the plurality of donee layers from said crystalline donor in succession with one another. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An electronic and/or optoelectronic device structure, comprising:
a first component layer comprising; a first cleaved crystalline donee layer having a first cleaved surface and a second obverse cleaved surface spaced from said first cleaved surface; and a first device layer, confronting said first cleaved surface, formed monolithically with said first cleaved crystalline donee layer, said first device layer containing at least one of
1) an electronic device and
2) an optoelectronic device.- View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method of making an electronic and/or optoelectronic device structure by layer transfer, comprising:
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providing a crystalline donor having a first free surface and a plurality of intrinsic cleavage planes spaced from one another and each substantially parallel to the first surface, wherein the first free surface and a particular one of the plurality of intrinsic cleavage planes defining a first donee layer; fabricating a device layer containing at least one device upon the first donee layer so that the at least one device is monolithic with the first donee layer, said at least one device being either one of an electronic type and an optoelectronic type; securing a first handle to either the device layer or the first free surface of the first donee layer; and cleaving the first donee layer from the crystalline donor along the particular one of the plurality of intrinsic cleavage planes so as to liberate the first donee layer, in combination with the first handle, from the crystalline donor; wherein said fabricating of the device layer includes forming a single-crystal semiconductor layer on the first donee layer. - View Dependent Claims (25, 26, 27, 28, 29)
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Specification