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System and Method for Manufacturing Thick and Thin Film Devices Using a Donee Layer Cleaved From a Crystalline Donor

  • US 20100133546A1
  • Filed: 02/02/2010
  • Published: 06/03/2010
  • Est. Priority Date: 04/08/2005
  • Status: Abandoned Application
First Claim
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1. A system for manufacturing electronic and/or optoelectronic structures from at least one crystalline donor having a plurality of donee layers, each of the electronic and/or optoelectronic structures comprising a device layer containing at least one of 1) an electronic device and 2) an optoelectronic device, the system comprising:

  • an elongate handle;

    a first roll for paying out the elongate handle;

    at least one crystalline donor located downstream of said first roll, said at least one crystalline donor containing a plurality of donee layers;

    a donee-layer affixer operatively located downstream of said first roll and operatively configured for affixing each of said plurality of donee layers to the elongate handle in succession with one another; and

    a donee-layer cleaver operatively located relative to said donee-layer affixer and operatively configured to cleave each of the plurality of donee layers from said crystalline donor in succession with one another.

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