HIGH-SPEED OPTICAL INTERCONNECTION DEVICE

• US 20100133551A1
• Filed: 04/09/2009
• Published: 06/03/2010
• Est. Priority Date: 11/29/2008
• Status: Active Grant

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Mun, Jae-Kyoung, Lim, Jong-Won, Ji, Hong Gu, Kim, Dong-Young, Nam, Eun Soo, Chang, Woo Jin, Lee, Sang-Heung, Kim, Hae Cheon, Kang, Dong Min, Ahn, Hokyun
• Granted Patent: US 8,058,658 B2
• Time in Patent Office: Days
• US Class Current: 257/84
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/45014 Ribbon connectors, e.g. rectangular cross-section
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/4903 Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/30107 Inductance

Abstract

Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors.

Claims

1. A high-speed optical interconnection device, comprising:

a first semiconductor chip on a silicon-on-insulator (SOI) substrate;

light emitters on the SOI substrate, the light emitters receiving electrical signals from the first semiconductor chip to output optical signals;

optical detectors on the SOI substrate, the optical detectors detecting the optical signals to convert the optical signals into electrical signals; and

a second semiconductor chip on the SOI substrate, the second semiconductor chip receiving the electrical signals converted by the optical detectors.

2. The high-speed optical interconnection device of claim 1, wherein the SOI substrate comprises:

a first SOI substrate on which the first semiconductor chip and the light emitters are disposed; and

a second SOI substrate on which the second semiconductor chip and the optical detectors are disposed,

wherein the first and second SOI substrates are spaced apart from each other.

3. The high-speed optical interconnection device of claim 2, further comprising a circuit board on which the first and second SOI substrates are placed.

4. The high-speed optical interconnection device of claim 1, wherein the light emitters comprises an intermediate layer on the SOI substrate, and a III-V compound semiconductor layer,

wherein a lattice constant of the intermediate layer is greater than a lattice constant of an SOI layer of the SOI substrate, and is smaller than a lattice constant of the III-V compound semiconductor layer.

5. The high-speed optical interconnection device of claim 1, wherein the intermediate layer comprises a silicon-germanium layer.

6. The high-speed optical interconnection device of claim 1, further comprising multi-channel fibers transmitting the optical signals from the light emitters to the optical detectors.

7. The high-speed optical interconnection device of claim 1, wherein the first semiconductor chip comprises silicon-germanium bipolar transistors or silicon bipolar transistors.

8. The high-speed optical interconnection device of claim 7, wherein the light emitters comprises light-emitting diodes (LEDs).

9. The high-speed optical interconnection device of claim 1, further comprising:

a hologram optical substrate disposed on the light emitters; and

a mirror plate disposed on the hologram optical substrate.

10. The high-speed optical interconnection device of claim 7, wherein the hologram optical substrate comprises a hologram transmitter configured to generate hologram using the optical signal outputs from the light emitters.

11. The high-speed optical interconnection device of claim 1, wherein the optical detectors comprises one of a silicon-germanium positive intrinsic negative (PIN) photodiode, a silicon-germanium photodiode, a silicon photodiode, and a germanium photodiode.