Method for Producing Semiconductor Components and Thin-Film Semiconductor Component

• US 20100133564A1
• Filed: 08/04/2006
• Published: 06/03/2010
• Est. Priority Date: 08/05/2005
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Hahn, Berthold, Herrmann, Siegfried
• Granted Patent: US 8,058,147 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H01L 2933/0033 : relating to semiconductor body packages
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/54 : having a particular shape
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: Y02P 20/582 : Recycling of unreacted starting or intermediate materials

Abstract

The invention relates to a method for producing semiconductor components, wherein a layer composite (6) containing a semiconductor material is formed on a growth substrate (1), a flexible carrier layer is applied to the layer composite (6), the flexible carrier layer is cured to form a self-supporting carrier layer (2), and the growth substrate (1) is stripped away. As an alternative, the carrier layer (2) may have a base layer (2b) and an adhesion layer (2a) adhering on the layer composite.

Claims

1. A method for producing semiconductor components, comprising the steps of:

forming a layer composite containing a semiconductor material on a growth substrate;

applying a flexible carrier layer to the layer composite;

curing the flexible layer to form a self-supporting carrier layer; and

stripping away the growth substrate.

10. The method according to claim 1, wherein

the carrier layer contains a plastic material.

11. The method according to claim 10, wherein the plastic material contains an epoxy resin, polyethylene terephthalate and/or polymer.

12. The method according to claim 10, wherein the plastic material has curing temperatures in the region of 150°

C.

63. The method according to claim 1, wherein the carrier layer is a film.

64. The method according to claim 1, wherein the carrier layer is transparent.

65. The method according to claim 1, wherein the semiconductor components are thin-film semiconductor components.

66. The method according to claim 1, wherein the layer composite has an active layer sequence for generating electromagnetic radiation.

67. The method according to claim 1, wherein the layer composite is structured into individual layer stacks.

68. The method according to claim 1, wherein the carrier layer has a thickness that is less than or equal to 100 μ

m

69. The method according to claim 1, wherein the carrier layer contains a thermally conductive material.

70. The method according to claim 1, wherein the carrier layer contains an electrically insulating material.

71. The method according to claim 1, wherein the carrier layer has an electrically conductive material.

72. The method according to claim 1, wherein the layer composite has a first contact metallization on the side facing the carrier layer.

73. The method according to claim 72, wherein the contact metallization at least partly reflects the radiation generated by the active layer sequence.

74. The method according to claim 1, wherein the growth substrate is stripped away by means of a laser stripping method.

75. The method according to claim 1, wherein the layer composite is provided with a second contact metallization after the growth substrate has been stripped away.

76. The method according to claim 75, wherein a flexible covering layer is applied to the second contact metallization.

77. The method according to claim 76, wherein the flexible covering layer is partly or completely cured.

78. The method according to claim 76, wherein the covering layer is a film.

2. A method for producing semiconductor components, comprising the steps of:

forming a layer composite containing a semiconductor material on a growth substrate;

applying a self-supporting carrier layer to the layer composite, wherein the carrier layer has a base layer and an adhesion layer, which faces the layer composite and which adheres on the layer composite; and

stripping away the growth substrate.

3. The method according to claim 2, wherein the adhesion layer is formed from a hot melt adhesive.

4. The method according to claim 2, wherein the base layer is formed from a plastic material.

5. The method according to claim 2, wherein the carrier layer is a film.

6. The method according to claim 2, wherein the carrier layer is transparent.

7. The method according to claim 2, wherein the semiconductor components are thin-film semiconductor components.

8. The method according to claim 2, wherein the layer composite has an active layer sequence for generating electromagnetic radiation.

9. The method according to claim 2, wherein the layer composite is structured into individual layer stacks.

13. The method according to claim 2, wherein the carrier layer has a thickness that is less than or equal to 100 μ

m

14. The method according to claim 2, wherein the carrier layer contains a thermally conductive material.

15. The method according to claim 2, wherein the carrier layer contains an electrically insulating material.

16. The method according to claim 2, wherein the carrier layer has at least one electrical conductor track (10a).

17. The method according to claim 2, wherein the carrier layer has an electrically conductive material.

18. The method according to claim 2, wherein the layer composite has a first contact metallization on the side facing the carrier layer.

19. The method according to claim 18, wherein the contact metallization at least partly reflects the radiation generated by the active layer sequence.

20. The method according to claim 2, wherein the growth substrate is stripped away by means of a laser stripping method.

21. The method according to claim 2, wherein the layer composite is provided with a second contact metallization after the growth substrate has been stripped away.

22. The method according to claim 21, wherein a flexible covering layer is applied to the second contact metallization.

23. The method according to claim 22, wherein the flexible covering layer is partly or completely cured.

24. The method according to claim 22, wherein the covering layer is a film.

25. A thin-film semiconductor component comprising:

a layer stack; and

a self-supporting carrier layer arranged on the layer stack,

wherein the carrier layer is cured.

32. The thin-film semiconductor component according to claim 25, wherein the carrier layer contains a plastic material.

33. The thin-film semiconductor component according to claim 32, wherein the carrier layer contains an epoxy resin, polyethylene terephthalate and/or polyimide.

34. The thin-film semiconductor component according to claim 25, wherein the carrier layer contains an electrically insulating material.

48. The thin-film semiconductor component according to claim 25, wherein the carrier layer is a film.

49. The thin-film semiconductor component according to claim 25, wherein the carrier layer is transparent.

50. The thin-film semiconductor component according to claim 25, wherein the layer stack has an active layer stack for generating electromagnetic radiation.

51. The thin-film semiconductor component according to claim 25, wherein the carrier layer contains an electrically conductive material.

52. The thin-film semiconductor component according to claim 51, wherein the carrier layer contains a metal, in particular aluminium, silver, titanium or copper, or an alloy, in particular brass.

53. The thin-film semiconductor component according to claim 51, wherein the carrier layer contains carbon fibres.

54. The thin-film semiconductor component according to claim 25, wherein the carrier layer contains a silicate.

55. The thin-film semiconductor component according to claim 25, wherein the carrier layer has a thickness that is less than or equal to 100 μ

m.

56. The thin-film semiconductor component according to claim 25, wherein the semiconductor component has a self-supporting covering layer on the side remote from the carrier layer.

57. The thin-film semiconductor component according to claim 56, wherein the covering layer has an optical structure.

58. The thin-film semiconductor component according to claim 56, wherein the covering layer contains a converter material.

59. The thin-film semiconductor component according to claim 56, wherein a filling layer is arranged between the carrier layer and the covering layer.

60. The thin-film semiconductor component according to claim 56, wherein the carrier layer and the covering layer form a housing body for the radiation-emitting semiconducting component.

61. The thin-film semiconductor component according to claim 56, wherein the covering layer is transmissive to the radiation generated by the active layer stack.

62. The thin-film semiconductor component according to claim 61, wherein the thin-film semiconductor component is emissive on two sides.

26. A thin-film semiconductor component comprising:

a layer stack;

a self-supporting carrier layer arranged on the layer stack, wherein

the carrier layer has a base layer and an adhesion layer, which faces the layer stack and which adheres on the layer stack.

27. The thin-film semiconductor component according to claim 26, wherein the adhesion layer is formed from a hot melt adhesive.

28. The thin-film semiconductor component according to claim 26, wherein the base layer is formed from a plastic material.

29. The thin-film semiconductor component according to claim 26, wherein the carrier layer is a film.

30. The thin-film semiconductor component according to claim 26, wherein the carrier layer is transparent.

31. The thin-film semiconductor component according to claim 26, wherein the layer stack has an active layer stack for generating electromagnetic radiation.

35. The thin-film semiconductor component according to claim 26, wherein the carrier layer has at least one electrical conductor track.

36. The thin-film semiconductor component according to claim 26, wherein the carrier layer contains an electrically conductive material.

37. The thin-film semiconductor component according to claim 36, wherein the carrier layer contains a metal, in particular aluminium, silver, titanium or copper, or an alloy, in particular brass.

38. The thin-film semiconductor component according to claim 36, wherein the carrier layer contains carbon fibres.

39. The thin-film semiconductor component according to claim 26, wherein the carrier layer contains a silicate.

40. The thin-film semiconductor component according to claim 26, wherein the carrier layer has a thickness that is less than or equal to 100 μ

m.

41. The thin-film semiconductor component according to claim 26, wherein the semiconductor component has a self-supporting covering layer on the side remote from the carrier layer.

42. The thin-film semiconductor component according to claim 41, wherein the covering layer has an optical structure.

43. The thin-film semiconductor component according to claim 41, wherein the covering layer contains a converter material.

44. The thin-film semiconductor component according to claim 41, wherein a filling layer is arranged between the carrier layer and the covering layer.

45. The thin-film semiconductor component according to claim 41, wherein the carrier layer and the covering layer form a housing body for the radiation-emitting semiconducting component.

46. The thin-film semiconductor component according to claim 41, wherein the covering layer is transmissive to the radiation generated by the active layer stack.

47. The thin-film semiconductor component according to claim 46, wherein the thin-film semiconductor component is emissive on two sides.