POWER SEMICONDUCTOR MODULE AND MANUFACTURING METHOD THEREOF

• US 20100133684A1
• Filed: 08/04/2009
• Published: 06/03/2010
• Est. Priority Date: 11/28/2008
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: OKA, Seiji, Oi, Takeshi, Obiraki, Yoshiko
• Granted Patent: US 8,299,601 B2
• Time in Patent Office: Days
• US Class Current: 257/712
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49109 outside the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/4006 with bolts or screws
• CPC Class Codes: H01L 23/4334 Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/1815 : Shape

Abstract

A power semiconductor module includes: a circuit board having a metal base plate, a high thermal conductive insulating layer, and a wiring pattern; power semiconductor elements electrically connected to the wiring pattern; tubular external terminal connection bodies provided to the wiring pattern for external terminals; and a transfer mold resin body encapsulated to expose through-holes in the metal base plate and used to fixedly attach cooling fins to the face of the metal base plate on the other side with attachment members, the face of the metal base plate on the other side, and top portions of the tubular external terminal connection bodies, to form insertion holes for the attachment members communicating with the through-holes and having a larger diameter than the through-holes, and to cover the one side and side faces of the metal base plate and the power semiconductor elements.

Claims

1. A power semiconductor module, comprising:

a circuit board formed of a metal base plate, a high thermal conductive insulating layer joined to a face of the metal base plate on one side, and a wiring pattern provided to a face of the high thermal conductive insulating layer on a side opposite to the face joined to the metal base plate;

a power semiconductor element joined to an element mount portion of the wiring pattern;

a tubular external terminal connection body provided to the wiring pattern, to which an external terminal is connected by insertion; and

a transfer mold resin body encapsulated in such a manner that a face of the metal base plate on the other side and a top portion of the tubular external terminal connection body are exposed, and the one side and side faces of the metal base plate, the power semiconductor element, and the tubular external terminal connection body are covered, wherein;

the metal base plate is provided with a through-hole used to place an attachment member that fixes a cooling fin to the face of the metal base plate on the other side; and

the transfer mold resin body is provided with an insertion hole for the attachment member communicating with the through-hole and having a diameter larger than a diameter of the through-hole.

2. The power semiconductor module according to claim 1, wherein:

the diameter of the insertion hole is made larger than the diameter of the through-hole to allow a head portion of the attachment member to come into contact with a metal surface of the metal base plate in an outer peripheral rim portion of the through-hole.

3. The power semiconductor module according to claim 1, wherein:

a height of the transfer mold resin body on the metal base plate is made higher than a height of a head portion of the attachment member inserted into the insertion hole.

4. The power semiconductor module according to claim 1, wherein:

the insertion hole is formed to open also to a side face of the transfer mold resin body.

5. A method of manufacturing a power semiconductor module, comprising:

forming a construct by mounting a power semiconductor element and a tubular external terminal connection body on a circuit board formed of a metal base plate, a high terminal conductive insulating layer joined to a face of the metal base plate on one side, and a wiring pattern provided to a face of the high thermal conductive insulating layer on a side opposite to the face joined to the metal base plate, and by forming a circuit forming portion that electrically connects the power semiconductor element and the wiring pattern;

providing the metal base plate with a through-hole to place an attachment member that fixes a cooling fin to a face of the metal base plate on the other side;

clogging the through-hole with a molded product in order to form an insertion hole for the attachment member communicating with the through-hole and having a diameter larger than a diameter of the through-hole; and

forming a transfer mold resin body by placing the construct in which the through-hole is clogged with the molded product inside a die by placing the face of the metal base plate on the other side to abut on an inner bottom face of the die and placing a top portion of the tubular external terminal connection body and a top portion of the molded product to abut on an inner top face of the die while maintaining a predetermined interval between side faces of the metal base plate and inner side faces of the die, and by filling a clearing portion defied by the construct and molded product inside the die with mold resin.

6. The method of manufacturing a power semiconductor module according to claim 5, wherein:

the molded product has a positioning portion to be inserted into the through-hole.

7. The method of manufacturing a power semiconductor module according to claim 5, wherein:

the molded product is formed integrally with the die.