Organic Light Emitting Diode Display and Manufacturing Method Thereof

• US 20100133991A1
• Filed: 04/30/2009
• Published: 06/03/2010
• Est. Priority Date: 12/01/2008
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Jeong, Byoung-Seong, Heo, Seong-Kweon, Huh, Jong-Moo, Kim, Mu-Gyeom, Park, Chang-Mo, Shin, Min-Chul
• Granted Patent: US 8,304,981 B2
• Time in Patent Office: Days
• US Class Current: 313/504
• CPC Class Codes: H10K 2102/101 comprising transparent conductive oxides [TCO]
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/126 Shielding, e.g. light-blocking means over the TFTs

Abstract

An organic light emitting diode display includes a substrate. A control electrode is on the substrate. A gate insulating film covers the control electrode. An input electrode and an output electrode are on the gate insulating film and face each other. An oxide semiconductor is between the input electrode and the output electrode and on the control electrode. A pixel electrode is on portions of the edges of the output electrode and is electrically connected. An organic light emitting member is on the pixel electrode. A common electrode is on the organic light emitting member. The oxide semiconductor and the pixel electrode may be of the same layer.

Claims

1. An organic light emitting diode display, comprising:

a substrate;

a control electrode disposed on the substrate;

a gate insulating film covering the control electrode;

an input electrode and an output electrode disposed on the gate insulating film and facing each other;

a pixel electrode disposed between the input electrode and the output electrode and disposed on the control electrode;

a pixel electrode disposed on and electrically connected to portions of edges of the output electrode;

an organic light emitting member disposed on the pixel electrode; and

a common electrode disposed on the organic light emitting member.

2. The organic light emitting diode display of claim 1, wherein:

the oxide semiconductor and the pixel electrode are a same layer, and

the pixel electrode comprises hydrogen injected into a portion of the pixel electrode.

3. The organic light emitting diode display of claim 2,

further comprising an insulation film covering the oxide semiconductor and having a first opening exposing the pixel electrode, and

wherein the organic light emitting member is disposed in the first opening.

4. The organic light emitting diode display of claim 3, wherein the insulating film comprises a black pigment.

5. The organic light emitting diode display of claim 4,

wherein the gate insulating film has a second opening, and

further comprising a blocking member that covers the second opening.

6. The organic light emitting diode display of claim 5, wherein the lower edges of the oxide semiconductor are surrounded by the control electrode, the input electrode, the output electrode and the blocking member.

7. The organic light emitting diode display of claim 3, wherein a surface of the pixel electrode is plasma treated.

8. The organic light emitting diode display of claim 1,

wherein the gate insulating film comprises a first opening, and

further comprising a blocking member that covers the second opening.

9. The organic light emitting diode display of claim 8, wherein the blocking member comprises a black pigment.

10. The organic light emitting diode display of claim 8, wherein the blocking member is made of a same material as the input electrode and the output electrode.

11. The organic light emitting diode display of claim 8, wherein edges of the oxide semiconductor proximal to the substrate are surrounded by the control electrode, the input electrode, the output electrode, and the blocking member.

12. The organic light emitting diode display of claim 11, wherein a width of the oxide semiconductor is smaller than a width of the input electrode and a width of the output electrode.

13. The organic light emitting diode display of claim 1,

further comprising an insulation film that covers the oxide semiconductor and comprises a first opening that exposes the pixel electrode, and

wherein the organic light emitting member is disposed in the first opening.

14. The organic light emitting diode display of claim 13, wherein the insulation film comprises a black pigment.

15. The organic light emitting diode display of claim 14,

wherein the gate insulating film has a second opening, and

further comprising a blocking member that covers the second opening.

16. The organic light emitting diode display of claim 15, wherein the blocking member is made of the same material as the input electrode and the output electrode.

17. The organic light emitting diode display of claim 16, wherein edges of the oxide semiconductor proximal to the substrate are surrounded by the control electrode, the input electrode, the output electrode, and the blocking member.

18. The organic light emitting diode display of claim 1, wherein the pixel electrode is formed directly on the portions of edges of the output electrode;

19. A method of manufacturing an organic light emitting diode display, comprising:

forming a control electrode on a substrate;

forming a gate insulating film on the control electrode;

forming an input electrode and an output electrode that face each other on the gate insulating film;

forming a semiconductor on the control electrode above the input electrode and the output electrode and forming a pixel electrode on portions of the edges of the output electrode;

forming an organic light emitting member on the pixel electrode; and

forming a common electrode on the organic light emitting member.

20. The method of claim 19, wherein the forming of a semiconductor and a pixel electrode comprises:

depositing an oxide semiconductor on the substrate and photo-etching the oxide semiconductor; and

heat-treating the pixel electrode.

21. The method of claim 20, wherein the heat treating is performed under an atmosphere of oxygen (O₂) and nitrogen (N₂), or under an atmosphere of oxygen (O₂), nitrogen (N₂), and hydrogen (H₂).

22. The method of claim 21, wherein at least 50 sccm of the atmosphere gas is injected.

23. The method of claim 22, wherein the heat treating is performed at a temperature of 100°

C. or more.

24. The method of claim 20

further comprising forming an insulation film that covers the semiconductor and has a first opening that exposes the pixel electrode, and

wherein the organic light emitting member is in the first opening.

25. The method of claim 24, wherein the insulation film is made of silicon oxide or silicon nitride containing a black pigment.

26. The method of claim 19, wherein the forming the gate insulating film further comprises forming a second opening, and

further comprising forming a blocking member that covers the second opening.

27. The method of claim 19, wherein the pixel electrode is formed directly on the portions of the edges of the output electrode.