BROAD-RANGE MAGNETIC SENSOR AND MANUFACTURING PROCESS THEREOF

• US 20100134101A1
• Filed: 12/01/2009
• Published: 06/03/2010
• Est. Priority Date: 12/03/2008
• Status: Abandoned Application

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: RIVA, CATERINA, Marchesi, Marco, Morelli, Marco
• Application Number:
  US12/628,448
• Publication Number:
  US 20100134101A1
• Time in Patent Office: Days
• US Class Current: 324/251
• CPC Class Codes: G01R 33/05 in thin-film element
• CPC Class Codes: G01R 33/07 Hall effect devices

Abstract

A magnetic sensor is formed by a fluxgate sensor and by at least one Hall sensor integrated in a same integrated device, wherein the magnetic core of the fluxgate sensor is formed by a magnetic region that operates also as a concentrator for the Hall sensor. The magnetic region is manufactured in a post-machining stage on the metallization layers wherein the energizing coil and sensing coil of the fluxgate sensor are formed; the energizing and sensing coils are formed on a semiconductor substrate housing the conductive regions of the Hall sensor.

Claims

1. A magnetic sensor, comprising a fluxgate sensor and a Hall sensor integrated in a same integrated device.

2. The magnetic sensor according to claim 1, wherein the fluxgate sensor comprises an energizing coil, at least one sensing coil and a magnetic core, and the Hall sensor comprises conductive regions and a magnetic concentrator, the magnetic sensor comprising a magnetic region forming both said magnetic core and said magnetic concentrator.

3. A magnetic sensor according to claim 2, wherein said integrated device comprises a body of semiconductor material integrating said conductive regions of the Hall sensor, and an insulating layer on said body, accommodating said energizing coil and said sensing coil, said magnetic region extending on said insulating layer, above said energizing and sensing coils and said conductive regions.

4. A magnetic sensor according to claim 3, wherein said energizing coil and sensing coils are formed in distinct metallization levels and said magnetic region is formed by a ferromagnetic material layer deposited by sputtering.

5. A magnetic sensor according to claim 3, wherein said magnetic region has an elongated structure provided with a first and a second ends, said fluxgate sensor comprises a first and a second sensing windings, and said Hall sensor comprises a first and a second Hall-effect cell, said first sensing winding and said first Hall-effect cell being arranged vertically under said first end, and said second sensing winding and said second Hall-effect cell being arranged vertically under said second end.

9. A magnetometer, comprising the magnetic sensor according to claim 1, and including a supply/control circuitry for the fluxgate sensor and a supply/control circuitry for the Hall sensor.

10. A magnetometer according to claim 9, wherein said supply/control circuitries for the fluxgate sensor and the Hall sensor are integrated in said integrated device.

11. An electronic apparatus, comprising a control unit, a display, and a magnetometer according to claim 9.

6. A process for manufacturing a magnetic sensor, comprising the step of:

forming a fluxgate sensor and a Hall sensor in a same integrated device.

7. A process according to claim 6, wherein the step of forming a fluxgate sensor and a Hall sensor comprises the steps of:

providing a body of semiconductor material;

forming conductive regions within said body;

forming an insulating layer on said body;

forming an energizing coil and a sensing coil in said insulating layer; and

forming a magnetic region on said insulating layer, above said energizing and sensing coils, and above said conductive regions, said magnetic region forming both a magnetic core for said fluxgate sensor and a magnetic concentrator for said Hall sensor.

8. A process according to claim 7, wherein the steps of forming an insulating layer, an energizing coil, and a sensing coil comprise:

depositing a dielectric layer;

depositing a metallization level;

defining said metallization level to obtain said sensing coil;

depositing a subsequent dielectric layer;

depositing a subsequent metallization level;

defining said subsequent metallization level to obtain said energizing coil;

depositing a further dielectric layer; and

depositing by sputtering said magnetic region.