PHOTOSENSOR AND DISPLAY DEVICE
First Claim
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1. A photosensor comprising:
- a photoelectric conversion element including a photoelectric conversion layer, the photoelectric conversion layer including silicon; and
an amplifier circuit including a thin film transistor, the thin film transistor including an oxide semiconductor containing indium, gallium, and zinc.
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Abstract
Thin film transistors including an oxide semiconductor containing indium, gallium, and zinc are easily arranged in a matrix over a large substrate and have small characteristic variations. With amplifier circuits and driver circuits of display elements which include the thin film transistors including an oxide semiconductor containing indium, gallium, and zinc with small characteristic variations, intensity distribution of light received by the photodiodes arranged in a matrix is converted into electrical signals with high reproducibility and output, and the display elements arranged in a matrix can be uniformly driven.
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Citations
14 Claims
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1. A photosensor comprising:
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a photoelectric conversion element including a photoelectric conversion layer, the photoelectric conversion layer including silicon; and an amplifier circuit including a thin film transistor, the thin film transistor including an oxide semiconductor containing indium, gallium, and zinc.
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2. A photosensor comprising:
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a photoelectric conversion element including a photoelectric conversion layer, the photoelectric conversion layer comprising; a first semiconductor layer including an impurity element having one conductivity type; a second semiconductor layer in contact with the first semiconductor layer; and a third semiconductor layer in contact with the second semiconductor layer, wherein the third semiconductor layer includes an impurity element having a conductivity type opposite to the conductivity type of the first semiconductor layer; and an amplifier circuit including at least a selection thin film transistor, an amplifying thin film transistor, and a reset thin film transistor, wherein the selection thin film transistor, the amplifying thin film transistor, and the reset thin film transistor each include an oxide semiconductor containing indium, gallium, and zinc, wherein a gate electrode of the reset thin film transistor is electrically connectable to a reset gate signal line, wherein one of a source electrode and a drain electrode of the reset thin film transistor is electrically connectable to a sensor power supply line, wherein the other one of the source electrode and the drain electrode of the reset thin film transistor is electrically connectable to a gate electrode of the amplifying thin film transistor and one of an anode and a cathode of the photoelectric conversion element, wherein one of a source electrode and a drain electrode of the amplifying thin film transistor is electrically connectable to the sensor power supply line, wherein one of a source electrode and a drain electrode of the selection thin film transistor is electrically connectable to a sensor output wiring, wherein the other one of the source electrode and the drain electrode of the selection thin film transistor is electrically connectable to the other one of the source electrode and the drain electrode of the amplifying thin film transistor, and wherein a gate electrode of the selection thin film transistor is electrically connectable to a sensor gate signal line. - View Dependent Claims (3)
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4. An area sensor comprising:
a plurality of pixels, each of the plurality of pixels comprising; a photoelectric conversion element including a photoelectric conversion layer, the photoelectric conversion layer including silicon; and an amplifier circuit including a thin film transistor, the thin film transistor including an oxide semiconductor containing indium, gallium, and zinc.
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5. An area sensor comprising:
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a plurality of pixels, each of the plurality of pixels comprising; a photoelectric conversion element including a photoelectric conversion layer, the photoelectric conversion layer comprising; a first semiconductor layer including an impurity element having one conductivity type; a second semiconductor layer in contact with the first semiconductor layer; and a third semiconductor layer in contact with the second semiconductor layer, wherein the third semiconductor layer includes an impurity element having a conductivity type opposite to the conductivity type of the first semiconductor layer; and an amplifier circuit including at least a selection thin film transistor, an amplifying thin film transistor, and a reset thin film transistor, wherein the selection thin film transistor, the amplifying thin film transistor, and the reset thin film transistor each include an oxide semiconductor containing indium, gallium, and zinc, wherein a gate electrode of the reset thin film transistor is electrically connectable to a reset gate signal line, wherein one of a source electrode and a drain electrode of the reset thin film transistor is electrically connectable to a sensor power supply line, wherein the other one of the source electrode and the drain electrode of the reset thin film transistor is electrically connectable to a gate electrode of the amplifying thin film transistor and one of an anode and a cathode of the photoelectric conversion element, wherein one of a source electrode and a drain electrode of the amplifying thin film transistor is electrically connectable to the sensor power supply line, wherein one of a source electrode and a drain electrode of the selection thin film transistor is electrically connectable to a sensor output wiring, wherein the other one of the source electrode and the drain electrode of the selection thin film transistor is electrically connectable to the other one of the source electrode and the drain electrode of the amplifying thin film transistor, and wherein a gate electrode of the selection thin film transistor is electrically connectable to a sensor gate signal line. - View Dependent Claims (6)
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7. A display device comprising:
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a plurality of pixels, each of the plurality of pixels comprising; a photoelectric conversion element including a photoelectric conversion layer, the photoelectric conversion layer including silicon; an amplifier circuit; a display element; and a driver circuit of the display element, wherein the amplifier circuit and the driver circuit each include a thin film transistor, and wherein the thin film transistor includes an oxide semiconductor containing indium, gallium, and zinc. - View Dependent Claims (8, 9, 10)
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11. A display device comprising:
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a plurality of pixels, each of the plurality of pixels comprising; a photoelectric conversion element including a photoelectric conversion layer, the photoelectric conversion layer comprising; a first semiconductor layer including an impurity element having one conductivity type; a second semiconductor layer in contact with the first semiconductor layer; and a third semiconductor layer in contact with the second semiconductor layer, wherein the third semiconductor layer includes an impurity element having a conductivity type opposite to the conductivity type of the first semiconductor layer; an amplifier circuit including at least a selection thin film transistor, an amplifying thin film transistor, and a reset thin film transistor; wherein the selection thin film transistor, the amplifying thin film transistor, and the reset thin film transistor each include an oxide semiconductor containing indium, gallium, and zinc, wherein a gate electrode of the reset thin film transistor is electrically connectable to a reset gate signal line, wherein one of a source electrode and a drain electrode of the reset thin film transistor is electrically connectable to a sensor power supply line, wherein the other one of the source electrode and the drain electrode of the reset thin film transistor is electrically connectable to a gate electrode of the amplifying thin film transistor and one of an anode and a cathode of the photoelectric conversion element, wherein one of a source electrode and a drain electrode of the amplifying thin film transistor is electrically connectable to the sensor power supply line, wherein one of a source electrode and a drain electrode of the selection thin film transistor is electrically connectable to a sensor output wiring, wherein the other one of the source electrode and the drain electrode of the selection thin film transistor is electrically connectable to the other one of the source electrode and the drain electrode of the amplifying thin film transistor, and wherein a gate electrode of the selection thin film transistor is electrically connectable to a sensor gate signal line, a display element; and a driver circuit of the display element including at least a switching thin film transistor including an oxide semiconductor containing indium, gallium, and zinc, wherein a gate electrode of the switching thin film transistor is electrically connectable to a gate signal line, and wherein one of a source electrode and a drain electrode of the switching thin film transistor is electrically connectable to a source signal line. - View Dependent Claims (12, 13, 14)
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Specification