POWER SEMICONDUCTOR APPARATUS

• US 20100134979A1
• Filed: 08/13/2009
• Published: 06/03/2010
• Est. Priority Date: 11/28/2008
• Status: Abandoned Application

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Oi, Takeshi, Oka, Seiji, Obiraki, Yoshiko
• Application Number:
  US12/540,880
• Publication Number:
  US 20100134979A1
• Time in Patent Office: Days
• US Class Current: 361/709
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/4334 Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/115 the devices being arranged next to each other
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/1815 : Shape
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

A power semiconductor apparatus has: plural power semiconductor units, sealed by a transfer mold resin so that insertion holes of conductive tubular sockets in which plural external terminals can be insertion-connected are exposed in one surface thereof and a metal heat dissipation surface is exposed in another surface thereof; and a conductive connecting member having the plural external terminals. The surfaces of the power semiconductor units that have the insertion holes of tubular sockets are arrayed in the same direction in the plural power semiconductor units. Electrical wiring connection between the plural power semiconductor units is effected by inserting the external terminals of the conductive connecting member into the respective insertion holes of the tubular sockets of the plural power semiconductor units.

Claims

1. A power semiconductor apparatus comprising:

a plurality of power semiconductor units, sealed by a transfer mold resin so that insertion holes of conductive tubular sockets in which a plurality of external terminals can be insertion-connected are exposed in one surface thereof and a metal heat dissipation surface is exposed in another surface thereof; and

a conductive connecting member having the plurality of external terminals, the power semiconductor apparatus being configured so that;

the surfaces of the power semiconductor units that have the insertion holes of the tubular sockets are arrayed in the same direction in the plurality of power semiconductor units; and

electrical wiring connection between the plurality of power semiconductor units is effected by inserting the external terminals of the conductive connecting member into the respective insertion holes of the tubular sockets of the plurality of power semiconductor units.

2. The power semiconductor apparatus as set forth in claim 1, wherein the surfaces of the power semiconductor units having the insertion holes of the tubular sockets are directed in the same direction and arrayed in substantially the same plane in the plurality of power semiconductor units.

3. The power semiconductor apparatus as set forth in claim 1, wherein one type of the plurality of power semiconductor units is an inverter unit, and the other type thereof is a converter unit, and electrical wiring connection is effected between the two types of the power semiconductor units by the conductive connecting member.

4. The power semiconductor apparatus as set forth in claim 2, wherein one type of the plurality of power semiconductor units is an inverter unit, and the other type thereof is a converter unit, and electrical wiring connection is effected between the two types of the power semiconductor units by the conductive connecting member.

5. The power semiconductor apparatus as set forth in claim 1, further comprising:

a plurality of the power semiconductor units each being an inverter unit and having anode side tubular socket and cathode side tubular socket, wherein

electrical wiring connection is effected between the plurality of the power semiconductor units by the conductive connecting member to form a three-phase inverter structure.

6. The power semiconductor apparatus as set forth in claim 2, further comprising:

a plurality of the power semiconductor units each being an inverter unit and having anode side tubular socket and cathode side tubular socket, wherein

electrical wiring connection is effected between the plurality of the power semiconductor units by the conductive connecting member to form a three-phase inverter structure.

7. The power semiconductor apparatus as set forth in claim 1, wherein, by inserting the external terminals of the conductive connecting member into the insertion holes of the respective tubular sockets of the plurality of power semiconductor units, electrical wiring connection is effected between the plurality of power semiconductor units and also the plurality of power semiconductor units are mechanically joined to each other.

8. The power semiconductor apparatus as set forth in claim 2, wherein, by inserting the external terminals of the conductive connecting member into the insertion holes of the respective tubular sockets of the plurality of power semiconductor units, electrical wiring connection is effected between the plurality of power semiconductor units and also the plurality of power semiconductor units are mechanically joined to each other.

9. The power semiconductor apparatus as set forth in claim 1, wherein each of the power semiconductor units has anode side tubular socket and cathode side tubular socket, and the anode side tubular socket and the cathode side tubular socket are disposed so that either one of the anode side tubular socket or the cathode side tubular socket surrounds the other one, wherein the either one is comprised of a plurality of tubular sockets.

10. The power semiconductor apparatus as set forth in claim 2, wherein each of the power semiconductor units has anode side tubular socket and cathode side tubular socket, and the anode side tubular socket and the cathode side tubular socket are disposed so that either one of the anode side tubular socket or the cathode side tubular socket surrounds the other one, wherein the either one is comprised of a plurality of tubular sockets.