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METHOD OF OPERATING NON-VOLATILE MEMORY CELL AND MEMORY DEVICE UTILIZING THE METHOD

  • US 20100135086A1
  • Filed: 12/02/2008
  • Published: 06/03/2010
  • Est. Priority Date: 12/02/2008
  • Status: Active Grant
First Claim
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1. A method of operating a non-volatile memory cell, comprising:

  • pre-erasing the cell through double-side biased (DSB) injection of a first type of carrier; and

    programming the cell through Fowler-Nordheim (FN) tunneling of a second type of carrier.

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