Crystal Habit Modifiers for Nuclear Power Water Chemistry Control of Fuel Deposits and Steam Generator Crud

• US 20100135450A1
• Filed: 12/01/2009
• Published: 06/03/2010
• Est. Priority Date: 12/01/2008
• Status: Active Grant

• Current Assignee: Electric Power Research Institute Incorporated
• Original Assignee: Electric Power Research Institute Incorporated
• Inventors: Marks, Charles, Kim, Karen Samie, Fruzzetti, Keith Paul, Varrin, Robert Douglas JR.
• Granted Patent: US 8,433,030 B2
• Time in Patent Office: Days
• US Class Current: 376/306
• CPC Class Codes: G21C 17/0225 Chemical surface treatment, e.g. corrosion corrosion prevention in presence of water from scale removal or by modification of the properties of the liquid C02F5/00; inhibiting corrosion by adding corrosion inhibitors C23F11/00
• CPC Class Codes: Y02E 30/30 Nuclear fission reactors

Abstract

Crystal habit modifiers (CHM) are provided to ameliorate deposit-related concerns in nuclear plant systems. The principal targets for utilization of crystal habit modifiers are Pressure Water Reactor (PWR) primary-side fuel rod crud and secondary-side steam generator deposits and Boiling Water Reactor (BWR) coolant system deposits.

Claims

1. A process for modifying the habit of crud or corrosion product deposits on nuclear power reactor primary circuit or secondary circuit surfaces comprising introducing into water circulating through the primary circuit or secondary circuit at least one crystal habit modifier capable of interacting, at the temperature and pressure within the respective primary circuit or secondary circuit, with crud or corrosion product deposit components, or crud or corrosion product deposit precursors, in an amount sufficient to slow, alter, or inhibit crud or corrosion product crystal growth.

2. The process of claim 1, wherein said interacting comprises at least one of:

a) Changing the habit of deposit crystals during particulate growth in the fluid phase prior to particulate deposition;

b) Changing the habit of crystalline deposits that form from dissolved species or colloidal particulates at heat transfer or non-heat transfer surfaces;

c) Changing the habit of an existing deposit as the existing deposit ripens due to partial release, internal densification, solubilization and/or re-deposition;

d) Changing porosity, specific surface area or concentration of active adsorption sites for ionic species;

e) Reducing or increasing deposit crystal surface structure so as to change an activation energy or energy of adsorption of ionic species;

f) Changing deposit component or deposit precursor net particle charge or potential, to affect the deposition, agglomeration, or release of the deposit component or deposit precursor particulates;

g) Changing deposit crystal growth rate;

h) Changing deposit susceptibility to removal by chemical or mechanical means through tailoring the crystal habit;

or

i) Changing deposit chemical composition by adding a crystal habit modifier that promotes formation of at least one species as compared to a species formed in _the absence of the crystal habit modifier.

3. The process of claim 1, wherein the crystal habit modifier comprises at least one of (1) titanium dioxide, (2) a phosphate or phosphonates, (3) an acrylate, (4) a trivalent cation, optionally Al3+ or Mn3+, (5) a borate, (6) polyacrylic acid, (7) cerium acetate, (8) potassium, (9) maleic acid, (10) an aluminate, (11) a silicate, or (12) a nickel species.

4. The process of claim 2, wherein the crystal habit modifier comprises at least one of (1) titanium dioxide, (2) a phosphate or phosphonates, (3) an acrylate, (4) a trivalent cation, optionally Al3+ or Mn3+, (5) a borate, (6) polyacrylic acid, (7) cerium acetate, (8) potassium, (9) maleic acid, (10) an aluminate, (11) a silicate, or (12) a nickel species.

5. The process of claim 1, wherein the crystal habit modifier is introduced into water circulating through the secondary circuit, and comprises at least one of:

HEDP phosphonate, sodium oxalate, acetic acid, formic acid, propionic acid, sodium salicylate, boric acid, ethylenediamine tetraphosphonate (EDTP), ethylenediaminetetraacetic acid-tetramethylammonium hydroxide (EDTA-TMAH), polyacrylic acid (PAA), titanium dioxide, zinc acetate, sodium aluminum oxide, sodium chloride, sodium sulfate, or hydrogen peroxide.

6. The process of claim 2, wherein the crystal habit modifier is introduced into water circulating through the secondary circuit, and comprises at least one of:

HEDP phosphonate, sodium oxalate, acetic acid, formic acid, propionic acid, sodium salicylate, boric acid, ethylenediamine tetraphosphonate (EDTP), ethylenediaminetetraacetic acid-tetramethylammonium hydroxide (EDTA-TMAH), polyacrylic acid (PAA), titanium dioxide, zinc acetate, sodium aluminum oxide, sodium chloride, sodium sulfate, or hydrogen peroxide.

7. The process of claim 1, wherein the crystal habit modifier is introduced into water circulating through the primary circuit, and comprises at least one of:

boric acid, lithium hydroxide, oxalic acid, zinc acetate, ammonium acetate, chromium nitrate, chromium acetate, titanium dioxide, or lithium silicate.

8. The process of claim 2, wherein the crystal habit modifier is introduced into water circulating through the primary circuit, and comprises at least one of:

boric acid, lithium hydroxide, oxalic acid, zinc acetate, ammonium acetate, chromium nitrate, chromium acetate, titanium dioxide, or lithium silicate.

9. The process of claim 1, comprising modifying the crystal habit of nickel ferrite.

10. The process of claim 1, comprising modifying the crystal habit of magnetite.

11. The process of claim 1, wherein the crystal habit modifier is introduced into water circulating through the secondary circuit, and comprises at least one of:

formic acid, ethylenediaminetetraacetic acid-tetramethylammonium hydroxide (EDTA-TMAH), or polyacrylic acid (PAA), or titanium dioxide.

12. The process of claim 11, wherein the crystal habit modifier is introduced at a concentration of at least about 10 ppm.

13. The process of claim 1, wherein the crystal habit modifier is introduced into water circulating through the primary circuit, and comprises at least one of formic acid, or polyacrylic acid (PAA), or titanium dioxide.

14. The process of claim 13, wherein the crystal habit modifier is introduced at a concentration of at least about 1000 ppm.

15. The process of claim 2, comprising adding a crystal habit modifier capable of changing the concentration of species that dictate crystal habit.

16. The process of claim 2, comprising adding a crystal habit modifier and a deposit precursor or deposit template that interacts with the crystal habit.

17. The process of claim 2, comprising adding a crystal habit modifier capable of adsorbing onto the deposit crystal surface to change the average binding force between particles in the surface layer.

18. The process of claim 2, comprising adding a crystal habit modifier capable of interfering with at least one of the formation of deposit crystal nuclei or with the growth of the nuclei.

19. The process of claim 2, comprising adding a crystal habit modifier capable of at least one of:

blocking addition of molecules to deposit crystal faces,

reducing the growth rates of the deposit crystal faces, or

changing morphology of growing deposit crystal faces.

20. The process of claim 2, comprising adding a crystal habit modifier capable of at least one of:

controlling particle surface area,

varying electrostatic charge density on the surface of particles,

inducing changes of particle/solution interfacial tension,

decreasing particle surface energy,

producing deposits with high friability or altered porosity, or

varying pH or potential within existing primary side or secondary side chemistry specifications.