PHOTO-MASK AND WAFER IMAGE RECONSTRUCTION

• US 20100135568A1
• Filed: 09/19/2007
• Published: 06/03/2010
• Est. Priority Date: 09/20/2006
• Status: Active Grant

• Current Assignee: KLA Corporation
• Original Assignee: Dino Technology Acquisition LLC
• Inventors: Abrams, Daniel S., Preil, Moshe E., Hegyi, Alex N.
• Granted Patent: US 8,644,588 B2
• Time in Patent Office: Days
• US Class Current: 382/144
• CPC Class Codes: G03F 1/84 Inspecting
• CPC Class Codes: G06T 2207/30148 Semiconductor; IC; Wafer
• CPC Class Codes: G06T 7/001 using an image reference approach

Abstract

A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Claims

1. A method for determining an image, comprising:

receiving a mask pattern;

receiving a first image of at least a portion of a photo-mask corresponding to the mask pattern; and

determining a second image of at least the portion of the photo-mask in accordance with the first image and the mask pattern, wherein the second image is characterized by additional spatial frequencies than the first image.

2. The method of claim 1, wherein the mask pattern is characterized by spatial frequencies) within a first band of frequencies, the first image is characterized by spatial frequencies within a second band of frequencies that is less than the first band of frequencies, and the second image is characterized by spatial frequencies within a third band of frequencies that is greater than the second band of frequencies.

3. The method of claim 2, wherein the third band of frequencies approximately includes the first band of frequencies.

4. The method of claim 1, further comprising identifying features in the second image corresponding to differences between at least the portion of the photo-mask and the mask pattern.

5. The method of claim 4, further comprising determining an acceptance condition of the photo-mask in accordance with at least a subset of the features.

6. The method of claim 5, wherein the acceptance condition is further in accordance with a number of the features in at least the subset of the features.

7. The method of claim 4, wherein at least a subset of the features is identified in accordance with an estimated pattern that results from a photolithographic process using an estimated photo-mask, and wherein the estimated photo-mask corresponds to the second image.

8. The method of claim 7, wherein the estimated pattern is calculated using a model of an optical path used in the photolithographic process.

9. The method of claim 8, wherein the model of the optical path includes a forward optical calculation in which the estimated photo-mask is included in an object plane to determine the estimated pattern.

10. The method of claim 7, wherein the estimated pattern is calculated using a model of a photoresist used in the photolithographic process.

11. The method of claim 7, wherein at least the subset of the features is further identified in accordance with differences between the estimated pattern and a target pattern, wherein the target pattern corresponds to at least a portion of an integrated circuit.

12. The method of claim 11, wherein the target pattern corresponds to a document that is compatible with GDSII or OASIS format.

13. The method of claim 4, wherein an acceptance condition of the photo-mask is determined in accordance with a process window corresponding to an estimated photo-mask, wherein the estimated photo-mask corresponds to the second image.

14. The method of claim 4, further comprising providing a ranking of at least a subset of the features.

15. The method of claim 4, wherein at least a subset of the features correspond to defects in the photo-mask.

16. The method of claim 4, wherein at least the subset of the features is identified in accordance with a set of pre-determined features.

17. The method of claim 16, wherein at least the subset of the features is identified in accordance with statistical properties of the set of pre-determined features.

18. The method of claim 4, further comprising iteratively performing the operations of determining and identifying, wherein at least the subset of the features identified have a likelihood of occurrence exceeding a pre-determined value.

19. The method of claim 1, wherein the second image is determined using an inverse optical calculation in which the first image is in an image plane of a model of an optical path that corresponds to an optical inspection device used to generate the first image and the second image is in an object plane of the model of the optical path.

20. The method of claim 1, wherein the second image is further determined in accordance with a third image of the photo-mask, and wherein the first image and the third image correspond to different imaging conditions in an optical inspection device.

21. The method of claim 20, wherein the second image is further determined in accordance with weights for the respective images.

22. The method of claim 1, wherein the determining of the second image is further in accordance with a model of an optical path in an optical inspection device.

23. The method of claim 1, wherein a respective image includes magnitude and phase information.

24. A computer-program product for use in conjunction with a computer system, the computer-program product comprising a computer-readable storage medium and a computer-program mechanism embedded therein for determining a mask pattern, the computer-program mechanism including:

instructions for receiving a mask pattern;

instructions for receiving a first image of at least a portion of a photo-mask corresponding to the mask pattern; and

instructions for determining a second image of at least the portion of the photo-mask in accordance with the first image and the mask pattern, wherein the second image is characterized by additional spatial frequencies than the first image.

25. A method for determining an image, comprising:

receiving a mask pattern;

receiving a first image of at least a portion of a photo-mask corresponding to the mask pattern; and

determining a second image of at least the portion of the photo-mask in accordance with the first image and the mask pattern, wherein the second image is determined in an optical calculation using a model of an optical path corresponding to an optical inspection device.

26. The method of claim 25, wherein the determining includes an iterative optical calculation.

27. The method of claim 25, wherein the determining is in accordance with a gradient descent calculation.

28. A method for determining an image, comprising:

receiving a target pattern;

receiving a first image of at least a portion of a patterned wafer corresponding to the target pattern; and

determining a second image of at least the portion of the patterned wafer in accordance with the first image and the target pattern, wherein the second image is characterized by additional spatial frequencies than the first image.

29. A computer system, comprising:

at least one processor;

at least one memory; and

at least one program module, the program module stored in the memory and configured to be executed by the processor, the program module including;

instructions for receiving a mask pattern;

instructions for receiving a first image of at least a portion of a photo-mask corresponding to the mask pattern; and

instructions for determining a second image of at least the portion of the photo-mask in accordance with the first image and the mask pattern, wherein the second image is characterized by additional spatial frequencies than the first image.

30. A computer system, comprising:

means for computing;

means for storing; and

at least one program module mechanism, the program module mechanism stored in at least the means for storing and configured to be executed by at least the means for computing, at least the program module mechanism including;

instructions for receiving a mask pattern;

instructions for receiving a first image of at least a portion of a photo-mask corresponding to the mask pattern; and

instructions for determining a second image of at least the portion of the photo-mask in accordance with the first image and the mask pattern, wherein the second image is characterized by additional spatial frequencies than the first image.