Systems and Methods for Selecting Components for Use in RF Filters Within Implantable Medical Device Leads Based on Inductance, Parasitic Capacitance and Parasitic Resistance

• US 20100138192A1
• Filed: 12/01/2008
• Published: 06/03/2010
• Est. Priority Date: 12/01/2008
• Status: Abandoned Application

• Current Assignee: Pacesetter Incorporated (Abbott Laboratories)
• Original Assignee: Pacesetter Incorporated (Abbott Laboratories)
• Inventors: Min, Xiaoyi
• Application Number:
  US12/325,945
• Publication Number:
  US 20100138192A1
• Time in Patent Office: Days
• US Class Current: 703/1
• CPC Class Codes: A61N 1/086 Magnetic resonance imaging [MRI] compatible leads
• CPC Class Codes: A61N 1/3718 Monitoring of or protection against external electromagnetic fields or currents

Abstract

Techniques are provided for selecting and configuring inductors for use in radio-frequency (RF) inductive filters within pacing/sensing leads of pacemakers or implantable cardioverter-defibrillators. The filters are employed to reduce heating due to induced currents caused by magnetic resonance imaging (MRI) procedures or other sources of strong RF fields. In particular, techniques are provided for determining optimal inductance values by taking into account parasitic resistances and parasitic capacitances of the inductors. Tolerances of the inductive devices are also taken into account.

Claims

19. A lead for use with an implantable medical device subject to radio-frequency (RF) fields, the lead comprising:

an electrode;

a conductor connected to the electrode; and

an inductive filtering element connected along the conductor, wherein the filtering element includes an inductor achieving a target impedance at a particular frequency to be filtered, the inductor having an inductance and a parasitic capacitance, and wherein the inductance and parasitic capacitance are sufficient to achieve a target impedance value at the particular frequency despite variations in the inductance and parasitic capacitance due to device tolerance.

20. A method for designing a lead for use with an implantable medical device, wherein the lead includes an inductive filtering element to reduce lead heating due to radio-frequency (RF) fields, the inductive filtering element having an inductance and a parasitic capacitance, the method comprising:

selecting a self-resonant frequency (SRF) between at least two separate RF signal frequencies of a magnetic resonance imaging (MRI) system and selecting a target impedance to be achieved at each of the selected frequencies;

determining suitable values for inductance and parasitic capacitance sufficient to achieve the target impedance at each of the separate frequencies; and

selecting and installing particular components for use in the inductive filtering element based, in part, on the suitable values for inductance and parasitic capacitance.

1. A method for designing a lead for use with an implantable medical device, wherein the lead includes an inductive filtering element to reduce lead heating due to radio-frequency (RF) fields, the inductive filtering element having an inductance and a parasitic capacitance, the method comprising:

identifying candidate components for use as the inductive filtering element and determining tolerances for the inductances and the parasitic capacitances of the candidate components;

determining suitable values for inductance and parasitic capacitance sufficient to achieve a target impedance value at a selected frequency based on the tolerances for the inductances and parasitic capacitances of the candidate components; and

selecting and installing particular components for use as the inductive filtering element based, in part, on the suitable values for the parasitic capacitance and the inductance.

2. The method of claim 1 wherein the selected frequency is in the range of 63.7±

0.345 MHz.

3. The method of claim 1 wherein the selected frequency is in the range of 127.6±

3.6 MHz.

4. The method of claim 1 wherein the candidate components are inductors and wherein selecting and installing particular components for use as the inductive filtering element includes selecting a particular inductor from among a set of candidate inductors wherein the selected inductor has an inductance and a parasitic capacitance sufficient to achieve the target impedance value at the selected RF signal frequency despite variations due to tolerance.

5. The method of claim 1 wherein the target impedance value is a targeted lower bound (Z₀) for the amplitude of the impedance for the inductive filtering element at a resonant frequency determined based on the frequency to be filtered.

6. The method of claim 5 wherein the target impedance is at least 1000 ohms.

7. The method of claim 5 wherein determining values for the inductances and parasitic capacitances of the inductive filtering element includes determining ranges of suitable values for parasitic capacitance by identifying values satisfying the condition that:

Cs_o<

(1 −

Δ

L/L₀)/[ω

₀Z₀(Δ

Cs/Cs₀+Δ

Cs/Cs₀*Δ

L/L₀+Δ

L/L₀)]

where Z₀ represents a target lower bound for the impedance, Cs₀ represents a suitable central value for the parasitic capacitance Cs, L₀ represents a suitable central inductance value, Δ

Cs/Cs₀ represents the tolerance of the parasitic capacitance of the filtering element, Δ

L/L₀ represents the tolerance of the inductance of the filtering element, and ω

₀ represents the resonant frequency.

8. The method of claim 7 determining the range for inductance of the filtering element includes identifying particular combinations of L₀ and Cs₀ values that satisfy ω

₀²=1/(Cs₀*L₀).

9. The method of claim 8 wherein selecting components for use in the filtering element based on the suitable values for the inductance and parasitic capacitance includes identifying particular components from among the candidate components having central inductance and parasitic capacitance values corresponding to the particular combinations of suitable L₀ and Cs₀ values.

10. The method of claim 5 wherein determining values for the inductance and parasitic capacitance of the filtering element includes determining ranges of suitable values for inductance by identifying values satisfying the condition that:

L₀>

Z₀*(Δ

Cs/Cs₀+Δ

Cs/Cs₀*Δ

L/L₀+Δ

L/L₀)/ω

₀(1−

Δ

L/L₀)

where Z₀ represents a target lower bound for the impedance, Cs₀ represents a suitable central value for the parasitic capacitance, L₀ represents a suitable central inductance value, Δ

Cs/Cs₀ represents the tolerance of the parasitic capacitance of the filtering element, Δ

L/L₀ represents the tolerance of the inductance of the filtering element, and ω

₀ represents the resonant frequency.

11. The method of claim 10 determining the range for parasitic capacitance of the filtering element further includes identifying particular combinations of paired L₀ and Cs₀ values that satisfy ω

₀²=1/(Cs₀*L₀).

12. The method of claim 11 wherein selecting components for use in the filtering element based on the suitable values for the inductance and parasitic capacitance includes identifying particular components from among the candidate components having central inductance and parasitic capacitance values corresponding to the particular combinations of suitable L₀ and Cs₀ values.

13. The method of claim 1 wherein determining suitable values for inductance and parasitic capacitance sufficient to achieve a target impedance value at a selected RF signal frequency based on the tolerances for the inductances and parasitic capacitances of the candidate components additionally exploits a parasitic resistance (Rs) of the inductive element.

14. The method of claim 13 wherein selecting components for use in the filtering element based on the suitable values for the inductance and parasitic capacitance includes selecting components have a parasitic resistance (Rs) less 75 ohms.

15. The method of claim 13 wherein determining suitable values for inductance and parasitic capacitance while accounting for the parasitic resistance (Rs) of the inductive element includes:

for a given L₀, determining a range of values for Cs₀ based on;

Cs₀²<

(1+Q_L²(1−

Δ

Cs/Cs₀)²)/[ω

₀²Z₀²*(Q_L²*(Δ

CS/CS₀+Δ

Cs/Cs₀*Δ

L/L₀+Δ

L/L₀)²+(1+Δ

Cs/Cs₀)²)

where ω

₀=1/sqrt(L₀Cs₀), Q_L=ω

₀L₀/Rs and with a tolerance of Δ

Cs/Cs₀ and Δ

L/L₀.

16. An inductive (L) element designed using the method of claim 1.

17. The inductive (L) element of claim 16 wherein the inductive element is an inductor.

18. The inductive (L) element of claim 16 wherein the inductive element is part of an LCR network.

21. The method of claim 20 wherein the separate frequencies include a first frequency in the range of 63.7±

0.345 MHz and a second frequency in the range of 127.6±

3.6 MHz.

22. The method of claim 21 wherein determining a range of suitable parasitic capacitance values sufficient to achieve the target impedance at both of a pair of MRI frequencies includes:

separately solving the following equation for parasitic capacitance (Cs) for each of the two frequencies of the pair of frequencies;

Z²=(1+Q_L²)/[(YS−

Q_Lω

₀Cs)²+ω

₀²Cs²]

where Z is the target impedance, ω

₀ is representative of the frequency, Q_L represents a resonance factor for the inductor and Ys represents the reciprocal of the parasitic resistance (Rs) of the inductor; and

determining the range of parasitic capacitance values from the solutions to the equations.

23. The method of claim 22 wherein determining a range of suitable parasitic capacitance values sufficient to achieve the target impedance at both of the MRI frequencies further includes determining the range of suitable parasitic capacitance values based on tolerances in the inductance and parasitic capacitance values of candidate inductive elements.

24. An inductive (L) element designed using the method of claim 20.

25. The inductive (L) element of claim 24 wherein the inductive element is an inductor.

26. The inductive (L) element of claim 24 wherein the inductive element is part of an LCR network.

27. A lead for use with an implantable medical device subject to radio-frequency (RF) fields at a plurality of separate frequencies of a magnetic resonance imaging (MRI) system, the lead comprising:

an electrode;

a conductor connected to the electrode; and

an inductive filtering element connected along the conductor, wherein the filtering element includes an inductor achieving a target impedance at each of the plurality of separate RF signal frequencies, the inductor having an inductance and a parasitic capacitance providing a self-resonant frequency between the separate RF signal frequencies, and wherein the inductance and parasitic capacitance are sufficient to achieve the target impedance value at each of the separate RF signal frequencies.