Solar Cell With Co-Planar Backside Metallization

• US 20100139754A1
• Filed: 12/09/2008
• Published: 06/10/2010
• Est. Priority Date: 12/09/2008
• Status: Abandoned Application

• Current Assignee: Solarworld Innovations GmbH (Solarworld AG)
• Original Assignee: Palo Alto Research Center, Inc. (Xerox Holdings Corp.)
• Inventors: Fork, David K., Nakayashiki, Kenta, Solberg, Scott E.
• Application Number:
  US12/331,284
• Publication Number:
  US 20100139754A1
• Time in Patent Office: Days
• US Class Current: 136/256
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: H01L 31/0682 back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

A solar cell includes two backside metallization materials that are simultaneously extrusion deposited on a semiconductor substrate such that both a back surface field (BSF) metal layer (e.g., Al) and a solder pad metal structure (e.g., AgAl) are coplanar and non-overlapping, and the two metals abut each other to form a continuous metal layer that extends over the backside surface of the substrate. In one embodiment, the solder pad metal is formed directly on the backside surface of the substrate, either by co-extruding the two materials in the form of a continuous sheet, or by depositing spaced apart structures that are then flattened to contact each other by way of an air jet device. In another embodiment, the solder pad metal is disposed over a thin layer of the BSF metal (i.e., either disposed directly on the BSF metal, or disposed on an intervening barrier layer) using a co-extrusion head.

Claims

1. A solar cell comprising:

a semiconductor substrate having a backside surface;

a back surface field metallization layer disposed on a first portion of the backside surface, the back surface field metallization layer having a planar first surface portion facing away from the backside surface, and a first edge portion extending from the planar first surface portion toward the backside surface; and

a solder pad metallization layer disposed over a second portion of the backside surface, the solder pad metallization layer having a planar second surface portion facing away from the backside surface, and a second edge portion extending from the planar first second surface portion toward the backside surface,

wherein the back surface field metallization layer and the solder pad metallization layer are disposed such that the first edge portion of the back surface field metallization layer abuts the second edge portion of the solder pad metallization layer in a non-overlapping manner such that the planar first surface portion is substantially coplanar with the planar second surface portion.

2. The solar cell of claim 1, wherein the back surface field metallization layer consists essentially of Al.

3. The solar cell of claim 1, wherein the solder pad metallization layer comprises Ag.

4. The solar cell of claim 1,

wherein the back surface field metallization layer consists essentially of Al, and

wherein the solder pad metallization layer consists essentially of AgAl.

5. The solar cell of claim 1, wherein said solder pad metallization layer contacts the backside surface of the semiconductor substrate.

6. The solar cell of claim 1, wherein a portion of said back surface field metallization layer is disposed between said solder pad metallization layer and said backside surface.

7. The solar cell of claim 6, wherein a barrier layer is disposed between said portion of said back surface field metallization layer and said solder pad metallization layer.

8. A solar cell comprising:

a semiconductor substrate having a backside surface;

a back surface field metallization layer substantially covering a continuous area of

said backside surface; and

a solder pad metallization layer embedded within said back surface field

metallization layer such that the back surface field metallization layer and the solder pad

metallization layer have surfaces substantially in the same plane.

9. The solar cell of claim 8, wherein the solder pad metallization layer and said back surface field metallization layer share a common edge.

10. The solar cell of claim 8, wherein the back surface field metallization layer comprises Al.

11. The solar cell of claim 8, wherein the solder pad metallization layer comprises at least one of Ag and Al.

12. A method for fabricating a backside metallization structure on a semiconductor substrate comprising:

moving a printhead having at least one nozzle orifice relative to the semiconductor substrate; and

feeding an Al passivation layer ink and an AgAl soldering pad ink through said printhead such that both said Al passivation layer ink and said AgAl soldering pad ink are simultaneously extruded from said at least one nozzle orifice and deposited onto the semiconductor substrate.

13. The method of claim 12, wherein feeding said Al passivation layer ink and said AgAl soldering pad ink comprises causing said Al passivation layer ink and said AgAl soldering pad ink to exhibit laminar flow in said at least one nozzle orifice prior to exiting said printhead.

14. The method of claim 12, wherein feeding said Al passivation layer ink and said AgAl soldering pad ink comprises merging said Al passivation layer ink and said AgAl soldering pad ink prior to exiting from a common slit orifice defined in said printhead.

15. The method of claim 12, wherein feeding said Al passivation layer ink and said AgAl soldering pad ink comprises causing said Al passivation layer ink and said AgAl soldering pad ink prior to exit from separate spaced-apart orifices defined in said printhead such that said Al passivation layer ink forms a first bead on said substrate and said AgAl soldering pad ink forms a second bead on said substrate, and the method further comprises flattening said first and second beads using a gas jet.

16. The method of claim 12, wherein feeding said Al passivation layer ink and said AgAl soldering pad ink comprises causing portions of said Al passivation layer ink to overlap corresponding portions of said AgAl soldering pad ink.

17. The method of claim 12, further comprising feeding a barrier material through said printhead such that both said barrier material is disposed between a portion of said Al passivation layer ink and said AgAl soldering pad ink when said Al passivation layer ink and said AgAl soldering pad ink are simultaneously extruded from said at least one nozzle orifice and deposited onto the semiconductor substrate.