FLEXIBLE JOINT WITH RESISTIVE FIELD GRADING MATERIAL FOR HVDC CABLES AND METHOD FOR CONNECTING SAME TO HVDC CABLES

• US 20100139974A1
• Filed: 12/09/2009
• Published: 06/10/2010
• Est. Priority Date: 12/09/2008
• Status: Active Grant

• Current Assignee: ABB Hv Cables (Switzerland) GmbH (NKT A/S)
• Original Assignee: ABB Research Ltd. (ABB Limited)
• Inventors: CHRISTEN, Thomas
• Granted Patent: US 8,578,602 B2
• Time in Patent Office: Days
• US Class Current: 174/84.R
• CPC Class Codes: H02G 15/1806 Heat shrinkable sleeves insulation of electrical connections using a heat shrinking insulating sleeve H01R4/72
• CPC Class Codes: H02G 15/184 with devices for relieving electrical stress
• CPC Class Codes: H02G 15/196 having lapped insulation
• CPC Class Codes: Y10T 29/49176 with molding of electrically insulating material
• CPC Class Codes: Y10T 29/49194 Assembling elongated conductors, e.g., splicing, etc.
• CPC Class Codes: Y10T 29/49195 with end-to-end orienting

Abstract

A method of connecting two high voltage DC cables in a flexible cable joint. Each high voltage DC cable can include, from the inside to the outside, a central conductor, an adjacent circumferential cable inner semicon layer, an adjacent circumferential cable insulation layer, and an adjacent circumferential cable outer semicon layer. The method includes: connecting the conductors of the two cables in a cable joint; providing adjacent to the conductors a circumferential joint inner semicon layer connecting the cable inner semicon layers of the two cables; providing at least one circumferential and contiguous layer of field grading material connecting the cable outer semicon layer with the joint inner semicon layer and covering the cable insulation layer of the corresponding cable; providing a circumferential joint insulation layer around the layer of field grading material, and where appropriate around the joint inner semicon layer; and providing a circumferential joint outer semicon layer connecting the cable outer semicon layers of the two cables.

Claims

1. A method of connecting two high voltage direct current cables in a cable joint, wherein each high voltage direct current cable comprises, from an inside portion to an outside portion in a radial direction, a central electrode, a circumferential cable insulation layer, and an outer electrode layer, the method comprising the steps of:

a. connecting the central electrode of the two cables;

b. providing at least one circumferential and contiguous layer of field grading material connecting the outer electrode layer with the central electrode and contiguously covering the cable insulation layer of the corresponding cable;

c. providing a circumferential joint insulation layer around the layer of field grading material; and

d. providing a circumferential joint outer electrode layer connecting the cable outer electrode layers of the two cables.

2. The method according to claim 1, wherein each high voltage direct current cable comprises, from the inside portion to the outside portion in the radial direction, the central electrode as a central conductor, an adjacent circumferential cable inner semicon layer, an adjacent circumferential cable insulation layer, and the outer electrode layer as an adjacent circumferential cable outer semicon layer, wherein the method including the steps of:

i. connecting the conductors of the two cables in a cable joint;

ii. providing adjacent to the conductors a circumferential joint inner semicon layer connecting the cable inner semicon layers of the two cables;

iii. providing at least one circumferential and contiguous layer of field grading material connecting the cable outer semicon layer with the joint inner semicon layer and contiguously covering the cable insulation layer of the corresponding cable;

iv. providing a circumferential joint insulation layer around the layer of field grading material and where appropriate around the joint inner semicon layer; and

v. providing a circumferential joint outer semicon layer or field grading material layer connecting the cable outer semicon layers of the two cables.

3. The method according to claim 1, wherein for at least one of the steps c and d, at least one of a polymer based tape of the corresponding material is wound around the region to be joined, and a polymer based sleeve is shifted around the region to be joined.

4. The method according to claim 1, wherein after step d, the joint is vulcanised by at least one of applying heat and/or irradiation, and exposing the joint to radial pressure.

5. The method according to claim 1, wherein in step b, a single circumferential and contiguous layer of field grading material connects the outer electrode layer or the cable outer semicon layer of a first conductor of the cables with the central electrode or with the joint inner semicon layer on one side, and connects the outer electrode layer or the cable outer semicon layer of a second conductor of the cables with the central electrode or with the joint inner semicon layer on the other side to completely cover at least one of the central electrode and the joint inner semicon layer in the joint region.

6. The method according to claim 1, wherein the section of the cable insulation layer which is covered by the layer of field grading material in step b is shaped as a cone converging towards the respective terminal end of the respective cable, wherein an angle between an axial direction with respect to the axis of the conductor and the plane of the shaped cone is in the range of 5-45°

.

7. The method according to claim 1, wherein prior to step a, each of the cables is prepared so that in a terminal region of the cable, at least one of the inner electrode and the conductor is completely bared circumferentially, over a length of at least 2-30 cm, wherein in a first region adjacent to the terminal region, the cable inner semicon layer is bared, over a length of 0-10 cm, wherein in a second region adjacent to the first region, the cable insulation layer is shaped in an essentially conical shape converging towards the terminal end of the cable, wherein in a third region adjacent to the second region, the cable insulation layer is bared circumferentially, over a length of 0-10 cm, and wherein in a fourth region adjacent to the third region, at least one of the cable outer electrode layer and the outer semicon layer is bared.

8. The method according to claim 1, wherein the field grading material used in step b is a polymer based resistive field grading material made of a polymeric matrix provided with a filler, wherein the filler comprises a field grading effective amount of particles of a semiconducting material having an energy bandgap larger than 0 eV and smaller than 5 eV, including at least one of ZnO and SiC, and wherein the particles have at least one dimension smaller than or equal to 100 nm.

9. The method according to claim 1, wherein in step a, a sleeve or clamp is provided into which each of the terminal ends of the central electrode or of the conductors of the cables are shifted and fixed therein by at least one of positive engagement, form closure, and closure by adhesive force.

10. The method according to claim 1, wherein the cable inner semicon layer, the cable insulation layer and the cable outer semicon layer are made of one single extruded polymer material, wherein an innermost region of the polymer material is provided with a semiconducting filler to form the inner semicon layer, the cable insulation layer is free of filler, and an outermost region of the polymer material is provided with a semiconducting filler to form the outer semicon layer, and wherein the inner semicon layer has a thickness in the range of 1-3 mm, the cable insulation layer has a thickness in the range of 5-40 mm, and the outer semicon layer has a thickness in the range of 1-3 mm.

11. A cable joint connecting two high voltage direct current cables, wherein each high voltage direct current cable comprises, from an inside portion to an outside portion, a central conductor, an adjacent circumferential cable insulation layer, and an adjacent circumferential cable outer electrode or semicon layer, and is manufactured in accordance with the method of claim 1.

12. The cable joint according to claim 11, wherein the high voltage direct current cables comprise, outside of the outer electrode layer or the semicon layer at least one of the following layers:

swelling tape layer, lead alloy sheath layer, polyethylene jacket layer, tensile armour layer, outer cover layer, aluminium laminate layer, and metallic screen layer.

13. The cable joint according to claim 11, wherein the outer diameter of the joint region is less than 15% larger than the outer diameter of the cables with all circumferential layers, wherein the outer diameter of the joint region is not more than 10% larger.

14. The cable joint according to claim 10, wherein the curvature of the cable radius of the cable portion with the joint is between 5-20 times of the cable diameter.

15. A method of using the method according to claim 1 for connecting two high voltage direct current cables comprising, from an inside portion to an outside portion in a radial direction, a central conductor, an adjacent circumferential cable insulation layer, and an adjacent circumferential cable outer electrode or outer semicon layer, and outside of the outer semicon layer at least one of the following layers:

swelling tape layer, lead alloy sheath layer, polyethylene jacket layer, tensile armour layer, outer cover layer, aluminium laminate layer, and metallic screen layer.

16. The method according to claim 2, wherein for at least one of the steps ii, iii, iv and v, at least one of a polymer based tape of the corresponding material is wound around the region to be joined, and a polymer based sleeve is shifted around the region to be joined.

17. The method according to claim 2, wherein after step v, the joint is vulcanised by at least one of applying heat and/or irradiation, and exposing the joint to radial pressure.

18. The method according to claim 2, wherein in step iii, a single circumferential and contiguous layer of field grading material connects the outer electrode layer or the cable outer semicon layer of a first conductor of the cables with the central electrode or with the joint inner semicon layer on one side, and connects the outer electrode layer or the cable outer semicon layer of a second conductor of the cables with the central electrode or with the joint inner semicon layer on the other side to completely cover at least one of the central electrode and the joint inner semicon layer in the joint region.

19. The method according to claim 6, wherein the angle between the axial direction with respect to the axis of the conductor and the plane of the cone is in the range of 10-20°

.

20. The method according to claim 2, wherein the section of the cable insulation layer which is covered by the layer of field grading material in step b is shaped as a cone converging towards the respective terminal end of the respective cable, wherein an angle between an axial direction with respect to the axis of the conductor and the plane of the shaped cone is in the range of 5-45°

.

21. The method according to claim 20, wherein the angle between the axial direction with respect to the axis of the conductor and the plane of the cone is in the range of 10-20°

.

22. The method according to claim 7, wherein:

at least one of the inner electrode and the conductor is completely bared circumferentially, over a length of 10-25 cm;

in the first region, the cable inner semicon layer is bared over a length of 0.5-5 cm; and

in the third region, the cable insulation layer is bared circumferentially over a length of 0.5-5 cm.

23. The method according to claim 2, wherein prior to step i, each of the cables is prepared so in that a terminal region of the cable, at least one of the inner electrode and the conductor is completely bared circumferentially, over a length of at least 2-30 cm,

wherein in a first region adjacent to the terminal region, the cable inner semicon layer is bared, over a length of 0-10 cm,

wherein in a second region adjacent to the first region, the cable insulation layer is shaped in an essentially conical shape converging towards the terminal end of the cable,

wherein in a third region adjacent to the second region, the cable insulation layer is bared circumferentially, over a length of 0-10 cm, and

wherein in a fourth region adjacent to the third region, at least one of the cable outer electrode layer and the outer semicon layer is bared.

24. The method according to claim 23, wherein:

at least one of the inner electrode and the conductor is completely bared circumferentially, over a length of 10-25 cm;

in the first region, the cable inner semicon layer is bared over a length of 0.5-5 cm; and

in the third region, the cable insulation layer is bared circumferentially over a length of 0.5-5 cm.

25. The method according to claim 8, wherein the particles have at least one dimension between 2-80 nm.

26. The method according to claim 8, wherein the particles have at least one dimension between 5-50 nm.

27. The method according to claim 8, wherein the particles have at least one dimension between 5-30 nm.

28. The method according to claim 1, wherein in step a, the terminal ends of the central electrode are connected using welding techniques.

29. The cable joint according to claim 13, wherein the outer diameter of the joint region is not more than 5% larger than the outer diameter of the cables.

30. The cable joint according to claim 13, wherein the outer diameter of the joint region has essentially the same outer diameter as the cables.

31. The cable joint according to claim 14, wherein the curvature of the cable radius of the cable portion with the joint is between 8-15 times of the cable diameter.

32. The cable joint according to claim 11, wherein each high voltage direct current cable comprises a circumferential cable inner semicon layer between the central conductor and the circumferential cable insulation layer.

33. The cable joint according to claim 15, wherein each high voltage direct current cable comprises a circumferential cable inner semicon layer between the central conductor and the circumferential cable insulation layer.