SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND DISPLAY

• US 20100140599A1
• Filed: 03/26/2008
• Published: 06/10/2010
• Est. Priority Date: 03/26/2007
• Status: Abandoned Application

• Current Assignee: Idemitsu Kosan Company Limited, Kyushu University
• Original Assignee: Idemitsu Kosan Company Limited, Kyushu University
• Inventors: Yano, Koki, Adachi, Chihaya, Nakanotani, Hajime
• Application Number:
  US12/593,030
• Publication Number:
  US 20100140599A1
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/486 the channel region comprising two or more active layers, e.g. forming pn heterojunctions
• CPC Class Codes: H10K 50/30 Organic light-emitting transistors
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 50/805 Electrodes
• CPC Class Codes: H10K 59/82 Interconnections, e.g. terminals H10K59/131, H10K59/179 take precedence
• CPC Class Codes: H10K 85/622 containing four rings, e.g. pyrene

Abstract

A semiconductor device includes an organic semiconductor layer 10 and an oxide semiconductor layer 11, and emits light.

Claims

1. A semiconductor device which comprises an organic semiconductor layer and an oxide semiconductor layer, and emits light.

2. The semiconductor device according to claim 1, wherein the light emitted is generated by recombination of holes and electrons.

3. The semiconductor device according to claim 1, which is a transistor displaying bipolar properties of n-type and p-type.

4. The semiconductor device according to claim 1, wherein the oxide semiconductor layer is made of an n-type nondegenerate oxide and has an electron carrier concentration of less than 10¹⁸/cm³.

5. The semiconductor device according to claim 1, wherein the oxide semiconductor layer is formed of an amorphous oxide containing at least one selected from In, Zn, Sn and Ga.

6. The semiconductor device according to claim 5, wherein the oxide semiconductor layer is formed of an amorphous oxide containing In, Ga and Zn, an amorphous oxide containing Sn, Zn and Ga, an amorphous oxide containing In and Zn, an amorphous oxide containing In and Sn, an amorphous oxide containing In and Ga, or an amorphous oxide containing Zn and Sn.

7. The semiconductor device according to claim 1, wherein the oxide semiconductor layer is formed of a polycrystalline oxide containing In, Zn, Sn or Ga.

8. The semiconductor device according to claim 7, wherein the oxide semiconductor layer is formed of a polycrystalline oxide containing In and a positive divalent element.

9. The semiconductor device according to claim 1, wherein the oxide semiconductor layer has a multilayered structure in which plural kinds of layered oxides are stacked, and among said multilayered structure, the material of the layered oxide layer nearest to the organic layer has the work function larger than the work function of the other layered oxide.

10. The semiconductor device according to claim 1, wherein the organic semiconductor layer is formed of an organic substance having p-type characteristics, an organic substance having bipolar properties or an organic substance having n-type properties;

or a multilayered body or a mixture of two or more kinds thereof.

11. The semiconductor device according to claim 1, wherein the organic semiconductor layer is formed from an organic substance which emits light due to recombination of holes and electrons.

12. The semiconductor device according to claim 1, wherein the organic semiconductor layer and the oxide semiconductor layer are in contact with each other.

13. The semiconductor device according to claim 1, wherein the organic semiconductor layer and the oxide semiconductor layer form a light-emitting part.

14. The semiconductor device according to claim 13, wherein a first electrode is provided on the light-emitting part through an insulator layer, a second electrode is provided in contact with the light-emitting part and interspatially from said first electrode, and a third electrode is provided in contact with the light-emitting part and interspatially from said first and second electrodes.

15. The semiconductor device according to claim 14, wherein the organic semiconductor layer and the oxide semiconductor layer are formed into a thin film.

16. The semiconductor device according to claim 13, wherein a ratio of field-effect mobility μ

(n) at n-type driving and field-effect mobility μ

(p) at p-type driving [μ

(n)/μ

(p)] is in a range of 10<sup>−

5</sup>≦

μ

(n)/μ

(p)≦

10⁵.

17. A method of producing the semiconductor device according to claim 1, wherein an oxide semiconductor layer is formed, said oxide semiconductor layer is placed in the presence of oxygen and/or ozone, and then an organic semiconductor layer is formed.

18. A display apparatus using the semiconductor device according to claim 1.