AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR

• US 20100140611A1
• Filed: 05/22/2008
• Published: 06/10/2010
• Est. Priority Date: 05/30/2007
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Iwasaki, Tatsuya, Itagaki, Naho
• Granted Patent: US 8,188,467 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/247 Amorphous materials
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

In a field effect transistor, a channel layer of the field effect transistor is composed of an amorphous oxide including In, Zn, N and O, an atomic composition ratio of N to N and O (N/(N+O)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent, and the amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms.

Claims

1. An amorphous oxide, wherein

the amorphous oxide includes In, Zn, N and O,

an atomic composition ratio of N to N and O (N/(N+O)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent, and

the amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms.

2. An amorphous oxide according to claim 1, wherein an atomic composition ratio of N to a sum of In and Zn (N/(In+Zn)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 7 atomic percent.

3. An amorphous oxide according to claim 1, wherein an atomic composition ratio of In to In and Zn (In/(In+Zn)) in the amorphous oxide is equal to or larger than 15 atomic percent and equal to or smaller than 75 atomic percent.

4. A field effect transistor, wherein

a channel layer of the field effect transistor is composed of an amorphous oxide including In, Zn, N and O,

an atomic composition ratio of N to N and O (N/(N+O) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent, and

the amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms.

5. A field effect transistor according to claim 4, wherein an atomic composition ratio of N to a sum of In and Zn (N/In+Zn) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 7 atomic percent.

6. A field effect transistor according to claim 4, wherein an atomic composition ratio of In to In and Zn (In/(In+Zn)) in the amorphous oxide is equal to or larger than 15 atomic percent and equal to or smaller than 75 atomic percent.