SEMICONDUCTOR DEVICE

• US 20100140613A1
• Filed: 12/02/2009
• Published: 06/10/2010
• Est. Priority Date: 12/05/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: KIMURA, Hajime
• Granted Patent: US 8,476,625 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133528 Polarisers
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/136277 formed on a semiconductor substrate, e.g. of silicon
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/40 Arrangements for improving the aperture ratio
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device includes an oxide semiconductor layer provided over a substrate having an insulating surface; a gate insulating film covering the oxide semiconductor layer; a first conductive layer and a second conductive layer laminated in this order over the gate insulating film; an insulating film covering the oxide semiconductor layer and a gate wiring including a gate electrode (the first and second conductive layers); and a third conductive layer and a fourth conductive layer laminated in this order over the insulating film and electrically connected to the oxide semiconductor layer. The gate electrode is formed using the first conductive layer. The gate wiring is formed using the first conductive layer and the second conductive layer. A source electrode is formed using the third conductive layer. A source wiring is formed using the third conductive layer and the fourth conductive layer.

Claims

1. A semiconductor device comprising:

an oxide semiconductor layer provided over a substrate having an insulating surface;

a gate insulating film covering the oxide semiconductor layer;

a gate wiring including a gate electrode and comprising a first conductive layer and a second conductive layer laminated over the gate insulating film;

an insulating film covering the oxide semiconductor layer and the gate wiring including the gate electrode; and

a source wiring including a source electrode and comprising a third conductive layer and a fourth conductive layer laminated over the insulating film, the source wiring electrically connected to the oxide semiconductor layer,

wherein the gate electrode is formed using the first conductive layer,

wherein the gate wiring is formed using the first conductive layer and the second conductive layer,

wherein the source electrode is formed using the third conductive layer, and

wherein the source wiring is formed using the third conductive layer and the fourth conductive layer.

2. A semiconductor device according to claim 1,

wherein the first conductive layer and the third conductive layer each have a light-transmitting property.

3. A semiconductor device according to claim 1,

wherein the second conductive layer and the fourth conductive layer each have a light-blocking property.

4. A semiconductor device according to claim 3,

wherein the second conductive layer and the fourth conductive layer are formed using different materials.

5. A semiconductor device according to claim 1,

wherein the second conductive layer is formed using a metal material or alloy containing one element or a plurality of elements selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), and neodymium (Nd), or a nitride of any of the above metals.

6. A semiconductor device according to claim 1,

wherein the fourth conductive layer is formed using a metal material or alloy containing one element or a plurality of elements selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), and neodymium (Nd), or a nitride of any of the above metals.

7. A semiconductor device according to claim 1,

wherein the oxide semiconductor layer contains at least one selected from the group consisting of indium, gallium, and zinc.

8. A semiconductor device comprising:

an oxide semiconductor layer provided over a substrate having an insulating surface;

a gate insulating film covering the oxide semiconductor layer;

a gate wiring including a gate electrode and comprising a first conductive layer and a second conductive layer laminated over the gate insulating film;

an insulating film covering the oxide semiconductor layer and the gate wiring including the gate electrode;

a source wiring including a source electrode and comprising a third conductive layer and a fourth conductive layer laminated over the insulating film, the source wiring electrically connected to the oxide semiconductor layer; and

a capacitor wiring,

wherein the gate electrode is formed using the first conductive layer,

wherein the gate wiring is formed using the first conductive layer and the second conductive layer,

wherein the source electrode is formed using the third conductive layer,

wherein the source wiring is formed using the third conductive layer and the fourth conductive layer, and

the capacitor wiring is formed using a fifth conductive layer and a sixth conductive layer.

9. A semiconductor device according to claim 8,

wherein the first conductive layer and the third conductive layer each have a light-transmitting property.

10. A semiconductor device according to claim 8,

wherein the second conductive layer and the fourth conductive layer each have a light-blocking property.

11. A semiconductor device according to claim 10,

wherein the second conductive layer and the fourth conductive layer are formed using different materials.

12. A semiconductor device according to claim 8,

wherein the second conductive layer is formed using a metal material or alloy containing one element or a plurality of elements selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), and neodymium (Nd), or a nitride of any of the above metals.

13. A semiconductor device according to claim 8,

wherein the fourth conductive layer is formed using a metal material or alloy containing one element or a plurality of elements selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), and neodymium (Nd), or a nitride of any of the above metals.

14. A semiconductor device according to claim 8,

wherein the oxide semiconductor layer contains at least one selected from the group consisting of indium, gallium, and zinc.

15. A semiconductor device comprising:

an oxide semiconductor layer provided over a substrate having an insulating surface;

a gate insulating film covering the oxide semiconductor layer;

a gate wiring including a gate electrode and comprising a first conductive layer and a second conductive layer laminated over the gate insulating film;

an insulating film covering the oxide semiconductor layer and the gate wiring including the gate electrode;

a source wiring including a source electrode and comprising a third conductive layer and a fourth conductive layer laminated over the insulating film, the source wiring electrically connected to the oxide semiconductor layer;

a capacitor wiring; and

a storage capacitor portion,

wherein the gate electrode is formed using the first conductive layer,

wherein the gate wiring is formed using the first conductive layer and the second conductive layer,

wherein the source electrode is formed using the third conductive layer,

wherein the source wiring is formed using the third conductive layer and the fourth conductive layer,

the capacitor wiring is formed using a fifth conductive layer and a sixth conductive layer, and

the storage capacitor portion is formed using the oxide semiconductor layer, the third conductive layer, the fifth conductive layer, the gate insulating film, and the insulating film.

16. A semiconductor device according to claim 15,

wherein the first conductive layer and the third conductive layer each have a light-transmitting property.

17. A semiconductor device according to claim 15,

wherein the second conductive layer and the fourth conductive layer each have a light-blocking property.

18. A semiconductor device according to claim 17,

wherein the second conductive layer and the fourth conductive layer are formed using different materials.

19. A semiconductor device according to claim 15,

wherein the second conductive layer is formed using a metal material or alloy containing one element or a plurality of elements selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), and neodymium (Nd), or a nitride of any of the above metals.

20. A semiconductor device according to claim 15,

wherein the fourth conductive layer is formed using a metal material or alloy containing one element or a plurality of elements selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), and neodymium (Nd), or a nitride of any of the above metals.

21. A semiconductor device according to claim 15,

wherein the oxide semiconductor layer contains at least one selected from the group consisting of indium, gallium, and zinc.