×

PHOTOVOLTAIC DEVICE

  • US 20100140619A1
  • Filed: 01/12/2010
  • Published: 06/10/2010
  • Est. Priority Date: 09/09/2002
  • Status: Abandoned Application
First Claim
Patent Images

1. A photovoltaic device, the device comprising:

  • a first layer comprising an amorphous silicon semiconductor material of n-type conductivity;

    a second layer comprising a crystalline silicon semiconductor material of p-type conductivity; and

    a third layer comprising a non-doped semiconductor material, wherein the third layer is situated between and contacts the first layer and the second layer, and wherein the third layer is a translucent porous layer and diffusion barrier having a thickness of from about 1 nm to about 50 nm.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×