Insulated gate bipolar transistors including current suppressing layers

• US 20100140628A1
• Filed: 02/27/2007
• Published: 06/10/2010
• Est. Priority Date: 02/27/2007
• Status: Active Grant

• Current Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: Zhang, Qingchun
• Granted Patent: US 8,835,987 B2
• Time in Patent Office: Days
• US Class Current: 257/77
• CPC Class Codes: H01L 29/0834 Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/36 characterised by the concentration or distribution of impurities in the bulk material within semiconductor regions H01L29/06
• CPC Class Codes: H01L 29/66068 the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
• CPC Class Codes: H01L 29/66333 Vertical insulated gate bipolar transistors
• CPC Class Codes: H01L 29/7393 Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT

Abstract

An insulated gate bipolar transistor (IGBT) includes a first conductivity type substrate and a second conductivity type drift layer on the substrate. The second conductivity type is opposite the first conductivity type. The IGBT further includes a current suppressing layer on the drift layer. The current suppressing layer has the second conductivity type and has a doping concentration that is larger than a doping concentration of the drift layer. A first conductivity type well region is in the current suppressing layer. The well region has a junction depth that is less than a thickness of the current suppressing layer, and the current suppressing layer extends laterally beneath the well region. A second conductivity type emitter region is in the well region.

Claims

1. An insulated gate bipolar transistor, comprising:

a substrate having a first conductivity type;

a drift layer on the substrate and having a second conductivity type opposite the first conductivity type;

a current suppressing layer on the drift layer, the current suppressing layer having the second conductivity type and having a doping concentration that is larger than a doping concentration of the drift layer;

a well region in the current suppressing layer and having the first conductivity type, wherein the well region has a junction depth that is less than a thickness, of the current suppressing layer, and wherein the current suppressing layer extends laterally beneath the well region; and

an emitter region in the well region and having the second conductivity type.

2. The insulated gate bipolar transistor of claim 1, further comprising:

a gate oxide on the current suppressing layer above the well region;

a gate on the gate oxide layer; and

an emitter contact on the emitter region.

3. The insulated gate bipolar transistor of claim 1, wherein the current suppressing layer comprises an epitaxial layer.

4. The insulated gate bipolar transistor of claim 3, wherein the substrate comprises an off-axis n-type silicon carbide substrate, and wherein the drift layer and the current suppressing layer comprise p-type silicon carbide epitaxial layers.

5. The insulated gate bipolar transistor of claim 1, wherein the current suppressing layer has a thickness of about 1 μ

m.

6. The insulated gate bipolar transistor of claim 1, wherein the current suppressing layer has a doping concentration of about 1×

10¹⁵ cm<sup>−

3</sup> to about 1×

10¹⁵ cm<sup>−

3</sup>.

7. The insulated gate bipolar transistor of claim 6, wherein the current suppressing layer has a doping concentration of about 1×

10¹⁶ cm<sup>−

3</sup>.

8. The insulated gate bipolar transistor of claim 6, wherein the drift layer has a doping concentration of about 2×

10¹⁴ cm<sup>−

3</sup> to about 2×

10¹⁴ cm<sup>−

3</sup> and a thickness of about 100 μ

m to about 120 μ

m.

9. The insulated gate bipolar transistor of claim 1, wherein the first conductivity comprises n-type and the second conductivity comprises p-type.

10. The insulated gate bipolar transistor of claim 1, wherein the first conductivity comprises p-type and the second conductivity comprises n-type.

11. The insulated gate bipolar transistor of claim 1, further comprising a buffer layer between the substrate and the drift layer, wherein the buffer layer has the second conductivity type.

12. The insulated gate bipolar transistor of claim 1, wherein the well region has a junction depth of about 0.5 μ

m.

13. A method of forming an insulated gate bipolar transistor, comprising:

providing a substrate having a first conductivity type;

forming a drift layer on the substrate, wherein the drift layer has a second conductivity type opposite the first conductivity type;

forming a current suppressing layer on the drift layer, wherein the current suppressing layer has the second conductivity type and has a doping concentration that is larger than a doping concentration of the drift layer;

forming a well region in the current suppressing layer, wherein the well region has the first conductivity type; and

forming an emitter region in the well region, wherein the emitter region has the second conductivity type.

14. The method of claim 13, wherein forming the current suppressing layer comprises growing an epitaxial layer on the drift layer.

15. The method of claim 14, wherein the substrate comprises an off-axis n-type silicon carbide substrate, wherein forming the drift layer comprises forming a p-type silicon carbide epitaxial layer on the substrate, and wherein forming the current suppressing layer comprises forming a p-type silicon carbide epitaxial layer on the drift layer.

16. The method of claim 13, wherein the current suppressing layer is formed to have a thickness of about 1 μ

m.

17. The method of claim 13, wherein the current suppressing layer is formed to have a doping concentration of about 1×

10¹⁵ cm<sup>−

3</sup> to about 1×

10¹⁵ cm<sup>−

3</sup>.

18. The method of claim 17, wherein the current suppressing layer is formed to have a doping concentration of about 1×

10¹⁶ cm<sup>−

3</sup>.

19. The method of claim 13, wherein forming the well region comprises forming the well region to have a junction depth that is less than a thickness of the current suppressing layer.

20. An insulated gate bipolar transistor, comprising:

an n-type silicon carbide substrate;

a p-type silicon carbide drift layer on the n-type silicon carbide substrate;

a p-type epitaxial silicon carbide current suppressing layer on the p-type silicon carbide drift layer, the epitaxial current suppressing layer having a doping concentration that is larger than a doping concentration of the p-type silicon carbide drift layer;

an n+ well region in the epitaxial current suppressing layer, wherein the n+ well region has a junction depth that is less than a thickness of the epitaxial current suppressing layer; and

a p+ emitter region in the n+ well region.