SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME
First Claim
1. A semiconductor light emitting device, comprising:
- a semiconductor light emitting element;
a wavelength conversion layer including a wavelength conversion material in a predetermined concentration, the wavelength conversion layer configured to wavelength convert light emitted from the semiconductor light emitting element by exciting the wavelength conversion material with a portion of the light, the wavelength conversion layer having a side face;
a substrate adjacent which the semiconductor light emitting element and the wavelength conversion layer are disposed;
a bonding wire electrically connected with the semiconductor light emitting element; and
a sealing member including a light transmitting resin and titanium dioxide, the sealing member being disposed on the side face of the wavelength conversion layer, the sealing member including the titanium oxide in an amount of 0.1 to 8.0 wt %.
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Accused Products
Abstract
A semiconductor light emitting device can be configured to maintain high luminance and to suppress the possibility of the occurrence of wire breakage with high quality and reliability. A method for producing such a semiconductor light emitting device with a high process yield is also disclosed. The semiconductor light emitting device can include a sealing member into which a reflective filler can be mixed in such an amount (concentration) range that luminous flux with a predetermined amount can be maintained and the possibility of the occurrence of wire breakage can be lowered. Various sealing members containing a reflective filler with a plurality of concentrations within this range can be prepared in advance. By taking advantage of the phenomenon where chromaticity shifts depending on the concentration of the reflective filler, a semiconductor light emitting device with less chromaticity variation can be produced utilizing a sealing member with a particular concentration in accordance with the chromaticity of a particular semiconductor light emitting element that is used and which may be varied during fabrication.
58 Citations
20 Claims
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1. A semiconductor light emitting device, comprising:
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a semiconductor light emitting element; a wavelength conversion layer including a wavelength conversion material in a predetermined concentration, the wavelength conversion layer configured to wavelength convert light emitted from the semiconductor light emitting element by exciting the wavelength conversion material with a portion of the light, the wavelength conversion layer having a side face; a substrate adjacent which the semiconductor light emitting element and the wavelength conversion layer are disposed; a bonding wire electrically connected with the semiconductor light emitting element; and a sealing member including a light transmitting resin and titanium dioxide, the sealing member being disposed on the side face of the wavelength conversion layer, the sealing member including the titanium oxide in an amount of 0.1 to 8.0 wt %. - View Dependent Claims (2, 3, 4, 8, 9, 10, 11, 12, 13, 14, 15)
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5. A method for producing a semiconductor light emitting device including a semiconductor light emitting element;
- a wavelength conversion layer including a wavelength conversion material in a predetermined concentration, the wavelength conversion layer configured to wavelength convert light emitted from the semiconductor light emitting element by exciting the wavelength conversion material with a portion of the light;
a substrate adjacent which the semiconductor light emitting element and the wavelength conversion layer are disposed;
a bonding wire electrically connected with the semiconductor light emitting element; and
a sealing member including a light transmitting resin and titanium oxide, the method for producing comprising;measuring a chromaticity of light emitted from the semiconductor light emitting element provided with the wavelength conversion layer; determining a concentration of titanium oxide to be contained in the sealing member based on a chromaticity shift amount, the chromaticity shift amount being a difference between the measured chromaticity and a target chromaticity; and filling the device with the sealing member including the titanium oxide in the determined concentration of titanium oxide. - View Dependent Claims (6, 7)
- a wavelength conversion layer including a wavelength conversion material in a predetermined concentration, the wavelength conversion layer configured to wavelength convert light emitted from the semiconductor light emitting element by exciting the wavelength conversion material with a portion of the light;
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16. A semiconductor light emitting device having a light emitting axis about which light is emitted in a light emitting direction when power is provided to the semiconductor light emitting device, comprising:
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a semiconductor light emitting element; a wavelength conversion layer including a wavelength conversion material in a predetermined concentration, the wavelength conversion layer configured to wavelength convert light emitted from the semiconductor light emitting element, the wavelength conversion layer having a front face and a side face configured at an angle with respect to the front face, the light emitting axis intersecting the front face and being completely spaced from the side face; a substrate located adjacent the semiconductor light emitting element and the wavelength conversion layer; a bonding wire electrically connected with the semiconductor light emitting element; and a sealing member including a light transmitting resin and a light dispersing material, the sealing member being in contact with the side face of the wavelength conversion layer to form a contact surface, an entire extent of the contact surface being spaced from the light emitting axis. - View Dependent Claims (17, 18, 19, 20)
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Specification